HITACHI HVD131

HVD131
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-832 (Z)
Rev 0
Nov. 1999
Features
• Low capacitance.(C=0.8pF max)
• Low forward resistance. (rf=1.0Ω max)
• Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HVD131
1
SFP
Outline
1
1
Cathode mark
Mark
2
1. Cathode
2. Anode
HVD131
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
VRM
65
V
Reverse voltage
VR
60
V
Forward current
IF
100
mA
Power dissipation
Pd
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse current
IR
—
—
0.1
µA
VR = 60V
Forward voltage
VF
—
—
1.0
V
I F = 10 mA
Capacitance
C
—
—
0.8
pF
VR = 1V, f = 1 MHz
Forward resistance
rf
—
—
1.0
Ω
I F = 10 mA, f = 100 MHz
Note: Please mount soldering SFP by the reflow. ( Reflow condition: 235°C max, for 10 seconds )
Do not use the soldering iron because soldering SFP causes package a big heat stress.
2
HVD131
Main Characteristic
-2
10 -7
-4
10-8
10
10
Reverse current I R (A)
Forward current I F (A)
10
-6
Ta= 50°C
-8
10
10 -9
-10
10
Ta= 25°C
Ta= 50°C
10
-10
10
-11
Ta= 25°C
10 -12
-12
10
0
0.2
0.4
0.6
0.8
1.0
10 -13
0
40
20
Forward voltage V F (V)
60
80
100
Reverse voltage V R (V)
Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
3
10
f=1MHz
f=100MHz
Forward resistance r f (Ω )
Capacitance C (pF)
10
1.0
-1
10
1.0
10
Reverse voltage V R (V)
2
10
Fig.3 Capacitance Vs. Reverse voltage
2
10
10
1.0
10
-1
-5
10
-4
10
-2
-3
10
Forward current I
F
10
(A)
Fig.4 Forward resistance Vs. Forward current
3
HVD131
Package Dimensions
Unit: mm
1.0 – 0.10
0.55 – 0.05
1.4 – 0.10
0.3– 0.05
0.6 – 0.05
Cathode Mark
Hitachi Code
JEDEC
EIAJ
Mass
4
SFP
Conforms
0.0010 g
HVD131
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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