HITACHI PF0340A

PF0340A
MOS FET Power Amplifier Module for UHF Band
ADE-208-317B (Z)
3rd Edition
July 1996
Features
• Small package: 30 × 10 × 5.9 mm
• High efficiency: 43% Typ at 9.6 V
40% Typ at 4.8 V
• Low power control current: 150 µA Typ
Pin Arrangement
• RF-J
5
1
2
3
4
1: Pin
2: VPC
3: VDD
4: Pout
5: GND (Flange)
PF0340A
Internal Diagram and External Circuit
G
G
GND
GND
Pin1
Pin
Pin2
VPC
C1
Z1
Pin
FB1
Pin3
VDD
C3
VPC
C4
Pin4
Pout
FB2
C2
VDD
Z2
Pout
C1 = C2 = 0.01 µF (Ceramic chip capacitor)
C3 = C4 = 10 µF (Aluminum Electrolyte Capacitor)
FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent
Z1 = Z2 = 50 Ω (Microstrip line)
Absolute Maximum Ratings (Tc = 25°C)
Item
Symbol
Rating
Unit
Supply voltage
VDD
17
V
Supply current
I DD
3
A
PC voltage
VPC
4.5
V
Input power
Pin
50
mW
Operating case temperature
Tc (op)
–30 to +100
°C
Storage temperature
Tstg
–40 to +110
°C
2
PF0340A
Electrical Characteristics (Tc = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
430
—
450
MHz
—
Drain cutoff current
I DS
—
—
100
µA
VDD = 17 V, VPC = 0 V,
RL = Rg = 50 Ω,
Total efficiency
ηT
38
43
—
%
Pin = 20 mW, VDD = 9.6 V,
2nd harmonic distortion 2nd H.D.
—
–30
–25
dBc
Pout = 7 W (at VPC controlled),
3rd harmonic distortion
3rd H.D.
—
–60
–40
dBc
RL = Rg = 50 Ω, Tc = 25°C
Input VSWR
VSWR (in)
—
2.0
3.0
—
Output power (1)
Pout (1)
7
8
—
W
Pin = 20 mW, VDD = 9.6 V,
VPC = 3.5 V, RL = Rg = 50 Ω
Output power (2)
Pout (2)
1.8
2
—
W
Pin = 20 mW, VDD = 4.8 V,
VPC = 3.5 V, RL = Rg = 50 Ω
Load VSWR tolerance
—
No degradation
—
Pin = 20 mW, VDD = 15 V,
Pout ≤ 7 W, (at VPC controlled),
Output VSWR = 6:1 All phases
Stability
—
No parasitic oscillation
—
Pin = 20 mW, VDD = 4.8 to 15 V,
Pout ≤ 7 W, (at VPC controlled),
Output VSWR = 6:1 All phases
Mechanical Characteristics
Item
Measuring Conditions
Spec
Torque for screw up the heatsink flange
M2.6 Screw Bolts
1.5 to 3.5 kg•cm
Warp size of the heatsink flange: S
S=0
+0.1/–0 mm
S
3
PF0340A
Characteristic Curves
5
5
4
4
3
2
60
Pin = 20 mW
VDD = 9.6 V
Pout = 7 W
50
ηT
3
40
VPC
2
30
1
20
Efficiency ηT (%)
6
PC Voltage VPC (V)
V.S.W.R. (in)
VPC, ηT, VSWR (in) vs. Frequency
VSWRin
1
0
420
430
440
450
10
460
Frequency f (MHz)
5
10
4
3
2
70
Pin = 20 mW
VDD = 9.6 V
VPC = 3.5 V
Pout
60
ηT
7.5
50
5
40
2.5
30
VSWRin
1
0
420
430
440
Frequency f (MHz)
4
450
20
460
Efficiency ηT (%)
12.5
Output Power Pout (W)
V.S.W.R. (in)
Pout, ηT, VSWR (in) vs. Frequency
6
PF0340A
Pout, ηT vs. VDD (1)
60
f = 430 MHz
Pin = 20 mW
VPC = 3.5 V
Output Power Pout (W)
16
50
ηT
12
40
8
30
Efficiency ηT (%)
20
Pout
4
20
0
0
2.4
4.8
7.2
9.6
12
10
14.4
Supply Voltage VDD (V)
Pout, ηT vs. VDD (2)
60
f = 450 MHz
Pin = 20 mW
VPC = 3.5 V
ηT
16
50
12
40
8
30
Efficiency ηT (%)
Output Power Pout (W)
20
Pout
4
20
0
0
2.4
4.8
7.2
9.6
12
10
14.4
Supply Voltage VDD (V)
5
PF0340A
Pout, ηT, VSWR (in) vs. VPC (1)
6
15
60
f = 430 MHz
Pin = 20 mW
VDD = 9.6 V
3
Output Power Pout (W)
V.S.W.R. (in)
4
50
ηT
9
40
Pout
6
30
3
2
Efficiency ηT (%)
12
5
20
VSWRin
1
10
0
0
1
3
2
4
5
PC Voltage VPC (V)
Pout, ηT, VSWR (in) vs. VPC (2)
15
60
f = 450 MHz
Pin = 20 mW
VDD = 9.6 V
4
Output Power Pout (W)
V.S.W.R. (in)
5
ηT
12
50
9
40
Pout
6
30
2
3
20
1
0
3
VSWRin
10
0
1
2
3
PC Voltage VPC (V)
6
4
5
Efficiency ηT (%)
6
PF0340A
Pout, ηT, VSWR (in) vs. VPC (3)
5
4
3
Output Power Pout (W)
V.S.W.R. (in)
5
50
ηT
f = 430 MHz
Pin = 20 mW
VDD = 4.8 V
4
40
3
30
2
20
Pout
1
2
Efficiency ηT (%)
6
10
VSWRin
1
0
0
0
1
3
2
4
5
PC Voltage VPC (V)
Pout, ηT, VSWR (in) vs. VPC (4)
5
50
ηT
4
3
2
Output Power Pout (W)
V.S.W.R. (in)
5
4
40
3
30
2
20
Pout
1
10
f = 450 MHz
Pin = 20 mW
VDD = 4.8 V
VSWRin
1
Efficiency ηT (%)
6
0
0
0
1
2
3
4
5
PC Voltage VPC (V)
7
PF0340A
Package Dimensions
30 ± 0.5
26.6 ± 0.3
22 ± 0.5
3 ± 0.3
6 ± 0.3
Unit: mm
0.5
0.125 +− 0.05
5.9 Max
3 4
6.1 ± 1
11.2 ± 1
16.3 ± 1
23.9 ± 1
(2.2)
8
2
(1.5)
1
6.5 ± 1.0
5
(2-R1.5)
0.5
0.5 +− 1.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
RF-J



PF0340A
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
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Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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Copyright ' Hitachi, Ltd., 1997. All rights reserved. Printed in Japan.
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