HMC224MS8 v01.0300 MICROWAVE CORPORATION GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz Typical Applications Features The HMC224MS8 is ideal for: Low Cost 5-6 GHz Switch • UNII & HiperLAN Ultra Small Package: MSOP8 • PCMCIA WirelessLAN High Input P1dB: +33 dBm Single Positive Supply: +3 to +8V Functional Diagram General Description The HMC224MS8 is a low-cost SPDT switch in an 8-lead MSOP package for use in transmitreceive applications. The device can control signals from 5.0 to 6.0 GHz and is especially suited for 5.2 GHz UNII and 5.8 GHz ISM applications with only 1.2 dB loss. The design provides exceptional power handling performance; input P1dB = +33 dBm at 5 Volt bias. RF1 and RF2 are reflective shorts when “Off”. On-chip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. No DC blocking capacitors are required on RF I/O ports. SWITCHES - SMT 14 Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System Parameter Frequency Typ. Max. Units 1.3 1.2 1.3 1.6 1.5 1.6 dB dB dB Insertion Loss 5.0 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz Isolation 5.0 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz 20 26 22 24 31 27 dB dB dB 5.0 - 6.0 GHz 5.1 - 5.9 GHz 5.0 - 6.0 GHz 5.1 - 5.9 GHz 11 12 11 11 15 16 14 15 dB dB dB dB RF Common Return Loss RF1 & RF2 Input Power for 1 dB Compression 0/3V Control 0/5V Control 5.0 - 6.0 GHz 5.0 - 6.0 GHz 27 29 31 33 dBm dBm Input Third Order Intercept 0/3V Control 0/5V Control 5.0 - 6.0 GHz 5.0 - 6.0 GHz 31 33 35 37 dBm dBm 10 25 ns ns Switching Characteristics 5.0 - 6.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 14 - 72 Min. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC224MS8 v01.0300 GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz Insertion Loss Isolation 0 0 -1 -10 ISOLATION (dB) INSERTION LOSS (dB) -0.5 -1.5 -2 -2.5 -3 -20 -30 -3.5 -4 -40 5 6 7 8 4 5 FREQUENCY (GHz) 7 0 -5 S22 -10 Bias Voltage Range (Vdd) -0.2 to +12 Vdc Control Voltage Range (A & B) -0.2 to Vdd Vdc Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C -15 -20 S11 RFC -25 -30 4 5 6 7 8 FREQUENCY (GHz) Truth Table *Control Input Voltage Tolerances are ± 0.2 Vdc. Control Input* Bias 8 Absolute Maximum Ratings Return Loss RETURN LOSS (dB) 6 FREQUENCY (GHz) Bias Current Control Current Control Current Signal Path State Vdd (Vdc) A (Vdc) B (Vdc) Idd (uA) Ia (uA) Ib (uA) RF to RF1 RF to RF2 3 0 0 10 -5 -5 OFF OFF 3 0 Vdd 10 -10 0 ON OFF 3 Vdd 0 10 0 -10 OFF ON 5 0 0 45 -22 -23 OFF OFF 5 0 Vdd 45 -5 -40 ON OFF 5 Vdd 0 115 -40 -5 OFF ON 14 SWITCHES - SMT 4 Caution: Do not operate in 1dB compression at power levels above +33 dBm and do not “hot switch” power levels greater than +23 dBm (Vdd = +5Vdc). DC blocks are not required at ports RFC, RF1 and RF2. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 73 HMC224MS8 v01.0300 MICROWAVE CORPORATION GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 14 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. SWITCHES - SMT 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 14 - 74 Typical Application Circuit Notes: 1. Control Inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 2. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface. 3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B ports. Resistors R1, R2, R3 = 100 Ohms should be placed close to the Vdd, A and B ports. Use resistor size 0402 to minimize parasitic inductances and capacitances. 5. DC Blocking capacitors are not required for each RF port. 6. Evaluation PCB available. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0300 HMC224MS8 GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz Evaluation PCB List of Material Item Description J1 - J3 PC Mount SMA RF Connector J4 - J7 DC Pin R1, R3 100 Ω resistor, 0402 Pkg. U1 HMC224MS8 T/R Switch PCB* 104518 Evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. SWITCHES - SMT 14 * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 75