v02.1202 MICROWAVE CORPORATION HMC327MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB AMPLIFIERS - SMT • Wireless Local Loop Saturated Power: +30 dBm 45% PAE Supply Voltage: +5.0 V Power Down Capability Low External Part Count Functional Diagram General Description The HMC327MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3.0 and 4.0 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Electrical Specifications, TA = +25° C, Vs = 5V, Vctl = 5V Parameter Min. Frequency Range Max. 3.0 - 4.0 Gain 17 Gain Variation Over Temperature Units GHz 21 24 dB 0.025 0.035 dB / °C Input Return Loss 15 dB Output Return Loss 8 dB 27 dBm 30 dBm 40 dBm 5.0 dB 0.002 / 250 mA Output Power for 1dB Compression (P1dB) 24 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 36 Noise Figure Supply Current (Icq) Vpd = 0V/5V Control Current (Ipd) Vpd = 5V 7 mA tON, tOFF 40 ns Switching Speed 8 - 104 Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC327MS8G v02.1202 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Broadband Gain & Return Loss 25 24 20 22 20 15 10 5 16 0 -5 14 12 10 8 -10 +25 C 6 -15 +85 C -40 C 4 -20 2 -25 2 2.5 3 3.5 4 4.5 0 2.5 5 3 FREQUENCY (GHz) Input Return Loss vs. Temperature 4 4.5 Output Return Loss vs. Temperature 0 0 -5 +25 C +25 C +85 C RETURN LOSS (dB) RETURN LOSS (dB) 3.5 FREQUENCY (GHz) AMPLIFIERS - SMT 18 S21 S11 S22 GAIN (dB) RESPONSE (dB) 8 Gain vs. Temperature -40 C -10 -15 -20 +85 C -40 C -5 -10 -25 -30 2.5 3 3.5 4 -15 2.5 4.5 3 FREQUENCY (GHz) P1dB vs. Temperature 4 4.5 Psat vs. Temperature 34 34 32 32 30 30 28 28 Psat (dBm) P1dB (dBm) 3.5 FREQUENCY (GHz) 26 24 22 26 24 22 20 +25 C 20 +25 C 18 +85 C -40 C 18 +85 C -40 C 16 14 2.5 16 3 3.5 FREQUENCY (GHz) 4 4.5 14 2.5 3 3.5 4 4.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 105 HMC327MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Power Compression @ 3.5 GHz Output IP3 vs. Temperature 48 42 Pout (dBm) Gain (dB) 36 PAE (%) OIP3 (dBm) Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - SMT 8 30 24 18 12 6 0 -5 -3 -1 1 3 5 7 9 11 13 15 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 2.5 +25 C +85 C -40 C 3 INPUT POWER (dBm) Noise Figure vs. Temperature 4.5 10 28 32 9 27 31 26 30 25 29 24 28 23 27 22 26 21 25 +25 C +85 C -40 C GAIN dB) 7 6 5 4 3 20 2 19 1 3 3.5 4 4.5 24 23 22 18 4.75 0 P1dB Psat Gain 5 5.25 Vcc SUPPLY VOLTAGE (Vdc) FREQUENCY (GHz) Reverse Isolation vs. Temperature Power Down Isolation 0 0 +25 C -5 +85 C -40 C -10 ISOLATION (dB) -10 -20 -30 -40 -15 -20 -25 -30 -50 -60 2.5 -35 3 3.5 FREQUENCY (GHz) 8 - 106 4 4.5 -40 2.5 3 3.5 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 4.5 P1dB, Psat (dBm) NOISE FIGURE (dB) 4 Gain & Power vs. Supply Voltage 8 ISOLATION (dB) 3.5 FREQUENCY (GHz) MICROWAVE CORPORATION HMC327MS8G v02.1202 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Absolute Maximum Ratings 250 25 200 20 150 15 100 P1dB Psat Gain 10 Icq (mA) GAIN (dB), P1dB (dBm), Psat (dBm) 30 50 Icq 0 5 2.5 3 3.5 4 4.5 5 Vpd (Vdc) Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage (Vpd) +5.5 Vdc RF Input Power (RFin)(Vs = Vctl = +5.0 Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 29 mW/°C above 85 °C) 1.88 W Thermal Resistance (junction to ground paddle) 34 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Outline Drawing 8 AMPLIFIERS - SMT Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 107 MICROWAVE CORPORATION HMC327MS8G v02.1202 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz AMPLIFIERS - SMT 8 8 - 108 Pin Descriptions Pin Number Function Description 1 Vpd Power Control Pin. For maximum power, this pin hsould be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 2, 4, 7 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 3 RF IN This pin is AC coupled and matched to 50 Ohms from 3.0 to 4.0 GHz. 5, 6 RF OUT RF output and bias for the output stage. The power supply for the output device needs to be supplied to these pins. 8 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed as close to the device as possible. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC327MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1 - J2 PC Mount SMA RF Connector J3 2 mm DC Header C1 - C3 330 pF Capacitor, 0603 Pkg. C4 1.2 pF Capacitor, 0603 Pkg. C5 2.0 pF Capacitor, 0402 Pkg. C6 2.2 µF Capacitor, Tantalum L1 3.0 nH Inductor, 0805 Pkg. R1 130 Ohm Resistor, 0603 Pkg. U1 HMC327MS8G Amplifier PCB* 104829 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 109 MICROWAVE CORPORATION HMC327MS8G v02.1202 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Application Circuit AMPLIFIERS - SMT 8 Note 1: C3 should be located < 0.020” from Pin 8 (Vcc) Note 2: C2 should be located < 0.020” from L1. 8 - 110 TL1 TL2 TL3 Impedance 50 Ohm 50 Ohm 50 Ohm Length 0.038” 0.231” 0.1” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC327MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Notes: AMPLIFIERS - SMT 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 111