HMC375LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 8 Typical Applications Features The HMC375LP3 is ideal for basestation receivers: Noise Figure: 0.9 dB +34 dBm Output IP3 AMPLIFIERS - SMT • GSM, GPRS & EDGE Gain: 17 dB • CDMA & W-CDMA Very Stable Gain vs. Supply & Temperature • DECT Single Supply: +5.0 V @ 136 mA 50 Ohm Matched Output Functional Diagram General Description The HMC375LP3 high dynamic range GaAs PHEMT MMIC Low Noise Amplifier is ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise figure, 17 dB gain and +33 dBm output IP3 from a single supply of +5.0V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. The HMC375LP3 shares the same package with the HMC356LP3 and HMC372LP3 high IP3 LNAs. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifier. Electrical Specifications, TA = +25° C, Vs = +5V Parameter Min. Frequency Range Gain 16.5 Gain Variation Over Temperature Max. Min. Typ. Max. Min. 1.9 - 2.0 18.5 15.5 Typ. Max. Min. 2.0 - 2.1 17.5 15 17 13 Typ. Max. Units 2.1 - 2.2 GHz 15 dB 0.014 0.021 0.014 0.021 0.014 0.021 0.014 0.021 dB/°C Noise Figure 1.0 1.35 0.95 1.2 0.9 1.2 0.9 1.3 dB Input Return Loss 12 13 14 15 dB Output Return Loss 13 16 11 8 dB Reverse Isolation 35 34 34 34 dB 17.5 dBm Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) 8 - 142 Typ. 1.8 - 1.9 16 18.5 16 18.5 15 18 14.5 19.5 19.5 19.5 19.5 dBm Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) 34 33.5 33 32.5 dBm Supply Current (Idd) 136 136 136 136 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC375LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Noise Figure vs. Temperature 25 1.5 20 1.4 1.3 NOISE FIGURE (dB) RESPONSE (dB) 15 S21 S11 S22 10 5 0 -5 1.2 1.1 1 0.9 0.8 -10 0.7 -15 0.6 0.5 -20 0.5 8 +25 C +85 C -40 C 0.75 1 1.25 1.5 1.75 2 2.25 FREQUENCY (GHz) 2.5 2.75 1.7 3 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 Noise Figure vs. Vdd Gain vs. Temperature 1.5 24 AMPLIFIERS - SMT Broadband Gain & Return Loss 1.4 22 NOISE FIGURE (dB) GAIN (dB) 18 16 +25 C +85 C -40 C 14 1.2 1.1 1 0.9 0.8 0.7 12 0.6 0.5 10 1.7 +4.5 V +5.0 V +5.5 V 1.3 20 1.8 1.9 2 FREQUENCY (GHz) 2.1 1.7 2.2 1.8 1.9 2 FREQUENCY (GHz) 2.2 Reverse Isolation vs. Temperature Gain vs. Vdd -15 22 21 -20 +25 C +85 C -40 C 20 ISOLATION (dB) 19 GAIN (dB) 2.1 18 17 16 +4.5 V +5.0 V +5.5 V 15 -25 -30 -35 -40 14 -45 13 -50 12 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 2.2 8 - 143 HMC375LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Input Return Loss vs. Temperature 0 +25 C -40 C +85 C RETURN LOSS (dB) -5 AMPLIFIERS - SMT Output Return Loss vs. Temperature 0 -10 -15 -20 1.9 2 FREQUENCY (GHz) 2.1 2.2 Output IP3 vs. Temperature 1.7 COMPRESSION (dBm) OUTPUT IP3 (dBm) 2.1 2.2 23 +25 C +85 C -40 C 37 36 35 34 33 21 20 19 18 17 16 31 15 30 1.8 1.9 2 FREQUENCY (GHz) 2.1 14 1.7 2.2 +25 C +85 C -40 C PSAT 22 32 P1dB 1.8 1.9 2 2.1 P1dB vs. Vdd 40 24 39 23 +4.5 V +5.0 V +5.5 V 22 38 OUTPUT P1dB (dBm) +4.5 V +5.0 V +5.5 V 37 2.2 FREQUENCY (GHz) Output IP3 vs. Vdd 36 35 34 33 32 21 20 19 18 17 16 15 14 31 13 12 30 1.7 1.9 2 FREQUENCY (GHz) 24 38 1.7 1.8 P1dB & PSAT vs. Temperature 40 OUTPUT IP3 (dBm) -15 -25 1.8 39 8 - 144 -10 -20 -25 1.7 +25 C +85 C -40 C -5 RETURN LOSS (dB) 8 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 2.2 HMC375LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 MHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, Vdd2) +8.0 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFin)(Vs = +5.0 Vdc) +15 dBm +4.5 135 Channel Temperature 150 °C +5.0 136 Continuous Pdiss (T = 85 °C) (derate 15.6 mW/°C above 85 °C) 1.015 W +5.5 137 Thermal Resistance (channel to ground paddle) 64.1 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Outline Drawing 8 AMPLIFIERS - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. CHARACTERS TO BE HELVETICA MEDIUM, 0.35 HIGH, WHITE INK, OR LASER MARK LOCATED APPROX. AS SHOWN. 7. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 8. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 9. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 145 HMC375LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Pin Descriptions Pin Number Function Description 1, 3, 4, 6-10,12,14,16 N/C No connection necessary. These pins may be connected to RF/DC ground. 2 RF IN This pin is matched to 50 Ohms with a 13 nH inductor to ground. See Application Circuit. 5 ACG AC Ground - An external capacitor of 0.01µF to ground is required for low frequency bypassing. See Application Circuit for further details. 11 RF OUT This pin is AC coupled and matched to 50 Ohms. 13,15 Vdd2, Vdd1 Power supply voltage. Choke inductor and bypass capacitor are required. See application circuit. GND Package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit Note: L1, L2, L3 and C1 should be located as close to pins as possible. 8 - 146 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC375LP3 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1 - J2 PC Mount SMA RF Connector J3 - J4 DC Pin C1 1000 pF Capacitor, 0402 Pkg. C2, C3 10000 pF Capacitor, 0603 Pkg. L1 13nH Inductor, 0402 Pkg. L2 33nH Inductor, 0603 Pkg. L3 24nH Inductor, 0402 Pkg. U1 HMC375LP3 Amplifier PCB* 107514 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 147