HMC464LP5 v00.0304 MICROWAVE CORPORATION GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC464LP5 wideband driver is ideal for: +26 dBm P1dB Output Power • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT +30 dBm Output IP3 • Military EW, ECM & C3I Supply Voltage: +8.0V @ 290 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 25 mm2 Leadless SMT Package Functional Diagram General Description The HMC464LP5 is a GaAs MMIC PHEMT Distributed Power Amplifier in a leadless 5 x 5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, +30 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good from 2 - 18 GHz making the HMC464LP5 ideal for EW, ECM and radar driver amplifier as well as test equipment applications. The wideband amplifier I/O’s are internally matched to 50 Ohms. Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 2.0 - 6.0 12 14 Gain Flatness ±0.5 Gain Variation Over Temperature 0.025 Typ. Max. Min. 6.0 - 16.0 11.5 13.5 8 ±0.5 0.035 0.03 Typ. Max. GHz 11 dB ±1.0 0.04 0.05 dB 0.06 dB/ °C Input Return Loss 15 10 7 dB Output Return Loss 15 9 11 dB 21 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 23.5 26.5 22 25 18 27.5 26 24.0 dBm Output Third Order Intercept (IP3) 32 26 22 dBm Noise Figure 4.0 4.0 6.0 dB Supply Current (Idd) (Vdd= 8V, Vgg= -0.5V Typ.) 290 290 290 mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical. 8 - 268 Units 16.0 - 20.0 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC464LP5 v00.0304 MICROWAVE CORPORATION GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz MMIC PUMPED MIXER GainGaAs & Return LossSUB-HARMONICALLY Gain vs. Temperature 20 20 15 18 0 -5 -10 12 10 8 -15 6 -20 4 -25 2 +25C +85C -40C 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 OUTPUT RETURN LOSS (dB) +25C +85C -40C -5 -10 -15 -20 -25 -30 AMPLIFIERS - SMT 14 S21 S11 S22 -30 INPUT RETURN LOSS (dB) 8 16 5 GAIN (dB) RESPONSE (dB) 10 17 - 25 GHz +25C +85C -40C -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 20 22 18 20 22 FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 12 +25C +85C -40C -20 +25C +85C -40C 10 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 11 -10 -30 -40 -50 9 8 7 6 5 4 3 2 -60 1 -70 0 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 20 22 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 269 HMC464LP5 v00.0304 MICROWAVE CORPORATION GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz GaAs MMIC SUB-HARMONICALLY Psat PUMPED MIXER P1dB vs. Temperature vs. Temperature 30 30 28 28 26 26 24 24 Psat (dBm) P1dB (dBm) 22 20 18 +25C +85C -40C 16 20 18 14 14 12 12 10 +25C +85C -40C 10 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 FREQUENCY (GHz) 34 32 30 28 26 24 +25C +85C -40C 20 18 16 0 2 4 6 8 10 12 14 8 10 12 14 16 18 20 16 18 20 22 FREQUENCY (GHz) 32 30 28 26 24 22 Gain P1dB Psat OIP3 20 18 16 14 12 10 7.5 8 8.5 SUPPLY VOLTAGE (Vdc) Absolute Maximum Ratings 8 - 270 22 Gain, Power & OIP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg1 36 22 6 FREQUENCY (GHz) Output IP3 vs. Temperature OIP3 (dBm) 17 - 25 GHz 22 16 Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 8 Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +9.0 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -2.0 to 0 Vdc +7.5 292 Gate Bias Voltage (Vgg2) (Vdd -8.0) Vdc to Vdd +8.0 290 RF Input Power (RFin)(Vdd = +8.0 Vdc) +23 dBm +8.5 288 Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 51.5 mW/°C above 85 °C) 3.35 W Thermal Resistance (channel to ground paddle) 19.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC464LP5 v00.0304 MICROWAVE CORPORATION GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz Outline Drawing AMPLIFIERS - SMT 8 Pad Descriptions Pad Number NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD Function Description 5 RFIN This pin is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz 15 Vgg1 Gate Control for amplifier. Adjust between -2 to 0V to achieve Idd= 290 mA. 21 RFOUT & Vdd RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 30 Vgg2 Control voltage for amplifier. +3V should be applied to Vgg2 for nominal operation. Ground Paddle GND Ground paddle must be connected to RF/DC ground. 1-4, 6-14, 16-20, 22-29, 31, 32 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 271 v00.0304 MICROWAVE CORPORATION HMC464LP5 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - SMT 8 8 - 272 Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC464LP5 v00.0304 MICROWAVE CORPORATION GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Materials for Evaluation PCB 108344* Item Description J1, J2 PC Mount SMA Connector J3, J4 2 mm Molex Header C1, C2 100 pF Capacitor, 0402 Pkg. C3, C4 1000 pF Capacitor, 0603 Pkg. C5, C6 4.7 µF Capacitor, Tantalum U1 HMC464LP5 PCB** 108342 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 273