HMC490 v01.1003 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios Gain: 27 dB • Point-to-Multi-Point Radios +35 dBm Output IP3 • VSAT +5V Supply • Military & Space 50 Ohm Matched Input/Output Functional Diagram General Description +26 dBm P1dB The HMC490 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier which operates between 12 and 17 GHz. The HMC490 provides 27 dB of gain, 2 dB noise figure and an output IP3 of 35 dBm from a +5.0 V supply voltage. The amplifier chip can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = 5V, Idd = 200 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 12 - 14 24 26.5 24 Max. 14 - 17 GHz 27 dB 0.03 Noise Figure 2.5 2.0 dB Input Return Loss 8 12 dB Output Return Loss 8 9 dB 26 dBm 22 25 0.03 23 0.04 dB/ °C Saturated Output Power (Psat) 27 28 dBm Output Third Order Intercept (IP3) 32 35 dBm Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 200 200 mA * Adjust Vgg between -2.0 to 0V to achieve Idd = 200 mA typical. 1 - 104 Units Gain Variation Over Temperature Output Power for 1 dB Compression (P1dB) 0.04 Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC490 v01.1003 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz 30 32 25 30 20 28 S21 10 S11 17 - 25 GHz 26 S22 5 0 24 22 20 18 -5 +25 C +85 C -55 C 16 -10 14 -15 12 -20 10 8 10 12 14 16 18 20 10 22 11 12 FREQUENCY (GHz) 13 14 15 16 0 -2 +25 C -4 +85 C -55 C RETURN LOSS (dB) -4 RETURN LOSS (dB) 18 Output Return Loss vs. Temperature 0 -8 -12 +25 C +85 C -55 C -6 -8 -10 -12 -20 -14 10 11 12 13 14 15 16 17 10 18 11 12 FREQUENCY (GHz) 9 +25 C +85 C -55 C 8 OIP3 (dBm) 7 6 5 4 3 2 1 0 11 12 13 14 15 FREQUENCY (GHz) 14 15 16 17 18 Output IP3 vs. Temperature 10 10 13 FREQUENCY (GHz) Noise Figure vs. Temperature NOISE FIGURE (dB) 17 FREQUENCY (GHz) Input Return Loss vs. Temperature -16 1 AMPLIFIERS - CHIP 15 GAIN (dB) RESPONSE (dB) GaAs Gain MMIC SUB-HARMONICALLY PUMPED MIXER Broadband & Return Loss Gain vs. Temperature 16 17 18 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 +25 C +85 C -55 C 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 105 MICROWAVE CORPORATION HMC490 v01.1003 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Psat vs. Temperature 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Psat (dBm) P1dB (dBm) P1dB vs. Temperature +25 C +85 C -55 C 10 11 12 13 14 15 16 17 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 18 +25 C +85 C -55 C 10 11 12 FREQUENCY (GHz) 29 4.5 28 4 27 3.5 26 3 25 2.5 24 2 23 1.5 22 1 Gain 0.5 Noise Figure 0 20 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 -18 -16 -14 -12 -10 -8 0 GAIN (dB), OIP3 (dBm) -55 C -30 -40 -50 -60 -70 12 13 14 15 FREQUENCY (GHz) Pout (dBm) Gain (dB) PAE (%) -6 -4 -2 0 2 4 6 8 5 32 4.5 30 4 28 3.5 26 3 24 2.5 22 2 20 1.5 1 18 Gain OIP3 16 17 18 14 100 125 Noise Figure 150 175 Idd (mA) * Idd is controlled by varying Vgg 1 - 106 18 34 16 11 17 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 0.5 0 200 NOISE FIGURE (dB) ISOLATION (dB) +25 C +85 C 10 16 Gain, Noise Figure & IP3 vs. Supply Current @ 14 GHz, Vdd= 5V* Reverse Isolation vs. Temperature -20 15 INPUT POWER (dBm) Vdd (Vdc) -10 14 Power Compression @ 14 GHz Pout (dBm), GAIN (dB), PAE (%) 5 NOISE FIGURE (dB) 30 21 13 FREQUENCY (GHz) Gain & Noise Figure vs. Supply Voltage @ 14 GHz, Idd= 200 mA GAIN (dB) AMPLIFIERS - CHIP 1 MICROWAVE CORPORATION HMC490 v01.1003 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc Gate Bias Voltage (Vgg1, Vgg2, Vgg3) Typical Supply Current vs. Vdd Vdd (Vdc) Idd (mA) -4.0 to 0 Vdc +4.5 191 RF Input Power (RFin)(Vdd = +5.0 Vdc) +10 dBm +5.0 200 Channel Temperature 175 °C +5.5 208 Continuous Pdiss (T= 85 °C) (derate 29 mW/°C above 85 °C) 2.65 W +3.0 189 +3.5 200 Thermal Resistance (channel to die bottom) 34 °C/W +4.0 208 Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 200 mA at +5.0V and +3.5V. Outline Drawing 1 AMPLIFIERS - CHIP Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 107 MICROWAVE CORPORATION HMC490 v01.1003 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz AMPLIFIERS - CHIP 1 1 - 108 Pad Descriptions Pin Number Function Description 1,8, 7 Vgg1, 2, 3 Gate control for amplifier. Adjust to achieve Id of 200 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.01 µF are required. 2 RF IN This pad is AC coupled and matched to 50 Ohms from 12 - 17 GHz. 3, 4, 5 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 µF are required. 4 RF OUT This pad is AC coupled and matched to 50 Ohms from 12 - 17 GHz. Die Bottom GND Die Bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.1003 HMC490 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz 1 AMPLIFIERS - CHIP Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 109 MICROWAVE CORPORATION v01.1003 HMC490 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz AMPLIFIERS - CHIP 1 1 - 110 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC490 v01.1003 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Handling Precautions Follow these precautions to avoid permanent damage. 1 Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. AMPLIFIERS - CHIP Cleanliness: Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 111