HOLTEK HT23C128

HT23C128
CMOS 16K×8-Bit Mask ROM
Features
•
•
•
•
•
Operating voltage: 2.7V~5.5V
Low power consumption
– Operation: 25mA Max. (V CC=5V)
10mA Max. (VCC=3V)
– Standby: 30µA Max. (VCC=5V)
10µA Max. (VCC=3V)
Access time:150ns Max. (VCC=5V)
250ns Max. (VCC=3V)
•
•
•
•
16384×8 bits of mask ROM
Mask options: chip enable CE/CE/OE2/OE2
and output enable OE/OE/NC & OE1/
OE1/NC
TTL compatible inputs and outputs
Tristate outputs
Fully static operation
Package type: 28-pin DIP/SOP
General Description
essors, but also eliminates bus contention in
multiple bus microprocessor systems. An additional feature of the HT23C128 is its ability to
enter the standby mode whenever the chip enable (CE/CE) is inactive, thus reducing current
consumption to below 30µA. The combination of
these functions makes the chip suitable for high
density low power memory applications.
The HT23C128 is a read-only memory with
high performance CMOS storage device whose
128K of memory is arranged into 16384 words
by 8 bits.
For application flexibility, the chip enable and
output enable control pins can be selected as
active high or active low. This flexibility not
only allows easy interface with most microproc-
Block Diagram
1
24th Aug ’98
HT23C128
Pin Assignment
Pin Description
Pin Name
I/O
NC
Description
—
No connection
A0~A13
I
Address inputs
D0~D7
O
Data outputs
VSS
I
Negative power supply
CE/CE/OE2/OE2
I
Chip enable/Output enable input
OE/OE/NC
I
Output enable input
OE1/OE1/NC
I
Output enable input
VCC
I
Positive power supply
Operation Truth Table
Mode
CE/CE
OE/OE
OE1/OE1
A0~A13
D0~D7
Read
H/L
H/L
H/L
Valid
Data Out
Deselect
H/L
L/H
X
X
High Z
Deselect
H/L
X
L/H
X
High Z
Standby
L/H
X
X
X
High Z
Note: H=VIH, L=VIL, X=VIH or VIL
2
24th Aug ’98
HT23C128
Absolute Maximum Ratings*
Supply Voltage ................................. –0.3V to 6V
Storage Temperature................. –50°C to 125°C
Input Voltage........................ –0.3V to VCC+0.3V
Operating Temperature............... –40°C to 85°C
*Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings” may cause substantial damage to the device. Functional operation of this
device at other conditions beyond those listed in the specification is not implied and prolonged
exposure to extreme conditions may affect device reliability.
D.C. Characteristics
Ta=–40°C to 85°C
Supply voltage: 2.7V~3.6V
Symbol
Parameter
Test Conditions
Min.
Typ.
2.7
—
3.6
V
—
—
10
mA
—
VSS
—
0.4
V
—
VCC
Conditions
—
VCC
Operating Voltage
—
ICC
Operating Current
3V
VIL
Input Low Voltage
3V
O/P Unload,
f=5MHz
Max. Unit
VIH
Input High Voltage
3V
2.0
—
VCC
V
VOL
Output Low Voltage
3V
IOL=2.1mA
—
—
0.4
V
VOH
Output High Voltage
3V
IOH=–0.4mA
2.4
—
VCC
V
ILI
Input Leakage Current
3V
VIN=0 to VCC
—
—
10
µA
ILO
Output Leakage Current
3V
VOUT=0 to VCC
—
—
10
µA
ISTB1
Standby Current
3V
CE=VIL
CE=VIH
—
—
500
µA
ISTB2
Standby Current
3V
CE≤0.2V
CE≥VCC-0.2V
—
—
10
µA
CIN
Input Capacitance (See note)
—
f=1MHz
—
—
10
pF
COUT
Output Capacitance (See note)
—
f=1MHz
—
—
10
pF
Note: These parameters are periodically sampled but not 100% tested.
Ta=–40°C to 85°C
Supply voltage: 4.5V~5.5V
Symbol
Parameter
Test Conditions
VCC
Conditions
—
Min.
Typ.
Max. Unit
4.5
—
5.5
V
—
—
25
mA
VCC
Operating Voltage
—
ICC
Operating Current
5V
VIL
Input Low Voltage
5V
—
VSS
—
0.8
V
VIH
Input High Voltage
5V
—
2.2
—
VCC
V
O/P Unload,
f=5MHz
3
24th Aug ’98
HT23C128
Symbol
Parameter
Test Conditions
VCC
Min.
Conditions
Typ.
Max. Unit
VOL
Output Low Voltage
5V
IOL=3.2mA
—
—
0.4
V
VOH
Output High Voltage
5V
IOH=–1mA
2.4
—
VCC
V
ILI
Input Leakage Current
5V
VIN=0 to VCC
—
—
10
µA
ILO
Output Leakage Current
5V
VOUT=0 to VCC
—
—
10
µA
ISTB1
Standby Current
5V
CE=VIL
CE=VIH
—
—
1.5
mA
ISTB2
Standby Current
5V
CE≤0.2V
CE≥VCC-0.2V
—
—
30
µA
CIN
Input Capacitance (See note)
—
f=1MHz
—
—
10
pF
COUT
Output Capacitance (See note)
—
f=1MHz
—
—
10
pF
Note: These parameters are periodically sampled but not 100% tested.
Ta=–40°C to 85°C
A.C. Characteristics
Symbol
VCC=2.7V~3.6V
Parameter
VCC=4.5V~5.5V
Unit
Min.
Max.
Min.
Max.
250
—
150
—
ns
tCYC
Cycle Time
tAA
Address Access Time
—
250
—
150
ns
tACE
Chip Enable Access Time
—
250
—
150
ns
tAOE
Output Enable Access Time
—
150
—
80
ns
tOH
Output Hold Time
—
—
10
—
ns
tOD
Output Disable Time (See Note)
—
—
—
70
ns
tOE
Output Enable Time (See Note)
—
—
10
—
ns
Note: These parameters are periodically sampled but not 100% tested.
A.C. test conditions
Output load: see figure right
Input rise and fall time: 10ns
Input pulse levels: 0.4V to 2.4V
Input and output timing reference levels:
0.8V and 2.0V (VCC=5V)
1.5V (VCC=3V)
Output load circuit
4
24th Aug ’98
HT23C128
Functional Description
• Data read mode
The HT23C128 has two modes, namely data
read mode and standby mode, controlled by
CE/CE/OE2/OE2, OE/OE/NC and OE1/OE1/NC
inputs.
When both the chip enable (CE/CE/OE2/OE2)
and the output enable (OE/OE/NC and
OE1/OE1/NC) are active, the chip is in data
read mode. Otherwise, active CE/CE and inactive OE/OE/NC or OE1/OE1/NC result in
deselect mode. The output will remain in Hi-Z
state.
• Standby mode
The HT23C128 has lower current consumption,
controlled by the chip enable input (CE/CE).
When a low/high level is applied to the CE/CEB
input regardless of the output enable
(OE/OE/NC and OE1/OE1/NC) states, the chip
will enter the standby mode.
Timing Diagrams
• Propagation delay due to address (CE/CE/OE2/OE2, OE/OE and OE1/OE1 are active)
• Propagation delay due to chip enable and output enable (address valid)
5
24th Aug ’98
HT23C128
Characteristic Curves
6
24th Aug ’98
HT23C128
7
24th Aug ’98
HT23C128
HT23C128 MASK ROM ORDERING SHEET
Custom:
Input Medium:
EPROM
DISK
File (Mail Address: [email protected])
User No.
Type/Ref. Name
Q’ty
Check Sum
OTHER
Memory Address
Start
End
Control Pin and Package Form Option:
(1) CE (2) CE (3) OE2 (4) OE2
(a) 28 Pin Type Pin 20:
(1) OE (2) OE (3) NC
Pin 22:
(1) OE1 (2) OE1 (3) NC
Pin 27:
(1) Chip Form (2) 28 DIP (3) 28 SOP
(b) Package Form:
Companion User No.
Package Marking
Delivery Date
:
:
Q’ty:
CUSTOM CONFIRMED BY:
(NAME, DATE, POSITION & CO. CHOP)
HOLTEK CONFIRMED BY:
(SALES)
(SALES MANAGER)
8
24th Aug ’98