ETC 2SC1030

Power Transistors
www.jmnic.com
2SC1030
Silicon NPN Transistors
1B
2E
3C
Features
With TO-3 package
Low frequency power amplifications
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
RATING
UNIT
VCBO
Collector to base voltage
150
V
VCEO
Collector to emitter voltage
80
V
VEBO
Emitter to base voltage
6
V
IC
Collector current-Continuous
6
A
PD
Total Power [email protected]=25
50
W
Tj
Junction temperature
200
Tstg
Storage temperature
-55~200
TO-3
Electrical Characteristics Tc=25
SYMBOL
VCEO
PARAMETER
Collector-Emitter Sustaining Voltage
VCER
Collector-Emitter Sustaining Voltage
CONDITIONS
IC=0.2A; IB=0
MIN
80
TYP
MAX
UNIT
V
ICEO
Collector Cutoff Current
VCE=30V; IB=0
2.0
mA
IEBO
Emitter Cutoff Current
VEB=6V; IC=0
1.0
mA
ICBO
Collector Cutoff Current
VCB=30V; IE=0
1.0
mA
VEBO
Base-emitter breakdown voltage
IC=5.0A; IB=1.0A
1.5
V
VCE(sat-1)
Collector-emitter saturation voltages
VCE(sat-2)
Collector-emitter saturation voltages
VCE(sat-3)
Collector-emitter saturation voltages
hFE-1
Forward current transfer ratio
IC=1A; VCE=5V
35
hFE-2
Forward current transfer ratio
IC=5A; VCE=5V
22
hFE-3
Forward current transfer ratio
VBE(on)
200
Base-emitter On voltages
fT
Current Gain-Bandwidth Product
hfe
Small-Signal Current Gain
IC=1A; VCE=5V
JMnic
10
MHz