ETC 2SC536

2SC536
2SC536
TRANSISTOR (NPN)
TO-92
FEATURES
1. EMITTER
Power dissipation
PCM:
2. COLLECTOR
400 mW (Tamb=25℃)
Collector current
ICM:
100 mA
Collector-base voltage
V(BR)CBO:
40 V
Operating and storage junction temperature range
3. BASE
1 2 3
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=1mA, IB=0
30
V
Emitter-Base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=35V, IE=0
1
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
1
µA
DC current gain
hFE
VCE=6V, IC=1mA
VCE(sat)
IC=50mA, IB=5mA
fT
VCE=6V, IC=1mA
100
MHz
Cob
VCE=6V, f=1MHz
3.5
pF
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
60
960
0.5
V
CLASSIFICATION OF hFE
Rank
Range
D
E
F
G
H
60-120
100-200
160-320
280-560
480-960
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com