ETC 3DSD1280

PRELIMINARY
1.28 Gbit SDRAM
ELECTRONICS
3DSD1280-323H
1.28 GBit Synchronous DRAM - Hermetic package
Features
General Description
Organized as 40M x 32-bit.
Single +3.3V ±0.3V power supply
Two stacks of ten 64 MBit SDRAM mounted
on ceramic hermetic package
Fully synchronous; all signals registered on
positive edge of system clock.
Internal pipelined operation; column address
can be changed every clock cycle.
Programmable burst lengths: 1, 2, 4, 8 or full
page.
Auto Precharge, includes Concurrent Auto
Precharge, and Auto Refresh Modes.
Self Refresh Mode
LVTTL - compatible inputs and outputs
Vcc and Vss are decoupled with four 10nF
and four 100nF capacitors inside the module
MIL-STD-883D Class S screening temperature range : -15°C to +80°
The 3DSD1280-323H is a highly integrated Synchronous Dynamic Random Access Memory ceramic module, containing 1,342,177,280 bits. It is organized
with ten banks of 128 Mbit. Each Bank has a 32-bit interface, and is selected with specific CS#. All other signals are common to the twenty 64 MBit SDRAM
memories.
It is particularly well suited for use in high performance
and high density aerospace applications, such as solid
state recorder for airbornes and satellites.
The 3DSD1280-323H is packaged in a 84-pin CQFJ.
Pin Description
A1
A0
Vcc
A5
A4
A3
A2
Vcc
A7
A6
GND
NC
GND
NC/A12*
DQM
BS1
BS0
A11
A10
A9
A8
Pin configuration for 3DSD1024-0863S
84
64
63
1
Vcc
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
Vcc
GND
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
GND
TOP VIEW
NC
GND
DQ24
DQ25
DQ26
DQ27
DQ28
NC
Vcc
DQ8
DQ9
DQ10
DQ11
DQ12
DQ29
DQ30
DQ31
GND
DQ13
DQ14
DQ15
Vcc
CS6#
CS5#
CS4#
CS3#
CS2#
CS1#
CS0#
CKE
GND
RAS#
CS9#
CS8#
CS7#
Vcc
NC
GND
43
22
Vcc
NC
CLK
WE#
CAS#
21
DQ0-DQ31
Data Inputs/Outputs
A0-A12*
Address
CAS#
Column Address Select
RAS#
Row Address Select
WE#
Write Enable
CS0# - CS9#
Chip Select
BS0,BS1
Bank Address Input
CLK
Clock
CKE
Clock Enable
DQM
Input/Output Mask
Vcc
Power (+3.3v)
GND
Ground
NC
No Connection
Block Diagram
VCC
DQ[0...15]
A[0...12]
CLK
RAS
CAS
WE
42
CLK
RAS
CAS
WE
CS[0...9]
CKE
UDQM
LDQM
* : A12 is a provision for 256Mb components extension
VCC DQ[0...15]
A[0...11]
BSO
BS1
A12/NC
GND
VCC
CLK
DQ[0...15]
RAS
CAS
A[0...11]
WE
BSO
CS[0...9]
BS1
CKE
A12/NC
UDQM
LDQM
GND
BSO
BS1
CS[0...9]
CKE
DQM
GND
3D PLUS, 641 rue Hélène Boucher - ZI
F-78532 BUC Cedex FRANCE
Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89
Web : http://www. 3d-plus.com
3DFP-0008
Rev : 2
December 1999
Page 1/2
1.28 Gbit SDRAM
ELECTRONICS
3DSD1280-323H
A
e
b
Dimensions (mm)
34.29 ± 0.25
B
33.02 ± 0.50
b
0.432 typ.
A
A
r
0.762 ref.
h
18.35 ± 0.35
e
1.27
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
(Stressed greater than those listed may cause permanent damage to the device)
(Voltage referenced to GND, Ta = -15°C to +80°C)
Parameter
Power Supply Voltage
Power Supply Voltage for Output
Input Voltage
Output Voltage
Symbol
Rating
Units
Vcc
- 0.3 to +4.6
V
Power Supply Voltage
Vccq
- 0.3 to +4.6
V
Vin
- 0.3 to Vcc+0.3
V
Vout
- 0.3 to Vcc+0.3
V
Symbol
Min
Typ
Vcc, VccQ
3.0
Input High Voltage
VIH
2.0
Input Low Voltage
VIL
-0.3
Operating Temperature
Tope
-15
ICC1
Parameter
Max
Units
3.3
3.6
V
-
Vcc+0.3
V
-
0.8
V
+80
°C
300
mA
Storage temperature
Tstg
- 55 to +150
°C
Operating with one bank oper-ation
Short Circuit Output Current
Iout
TBD
mA
Standby in power down mode
ICC2
20
mA
Operating (burst)
ICC3
300
mA
TEST TOOLS
PRODUCT MARKING
3DSD1280-323H
Support YAMAICHI IC51-1004-405-1
- 3D PLUS Logo
- Part Number
- Date Code (ww,yy)
PN : 3DSD1280-323H
/883D-S
DC : 2599
ORDERING INFORMATION
- Serial Number on request
3DSD1280-323H/PROTO
CQFJ 84 - prototype ( 0°C to +70°C )
3DSD1280-323H/883D-S
CQFJ 84 - MIL STD 883D - Class S ( -15°C to +80°C )
MAIN SALES OFFICE
France
3D PLUS
Tel : 33 (0)1 30 83 26 50
Fax : 33 (0)1 39 56 25 89
e-mail : sales@3d-plus.com
DISTRIBUTOR
3D PLUS S.A. reserves the right to change or cancel products or specifications without notice.
C 3D PLUS, 1999
3D PLUS, 641 rue Hélène Boucher - ZI
F-78532 BUC Cedex FRANCE
Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89
Web : http://www. 3d-plus.com
3DFP-0008
Rev : 2
December 1999
Page 2/2