6MBI50UA-120 IGBT Module U-Series Features 1200V / 50A 6 in one-package Applications · High speed switching · Voltage drive · Low inductance module structure · Uninterruptible power supply · Inverter for Motor drive · AC and DC Servo drive amplifier · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 between thermistor and others *2 Screw Torque Mounting *3 -IC -IC pulse PC Tj Tstg Viso Conditions Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C 1 device AC:1min. Unit V V A Rating 1200 ±20 75 50 150 100 50 100 275 +150 -40 to +125 2500 W °C VAC N·m 3.5 - *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Symbols Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Thermistor Forward on voltage Reverse recovery time Lead resistance, terminal-chip*4 Resistance ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead R B value B *4:Biggest internal terminal resistance among arm. Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=50mA Tj=25°C VGE=15V, IC=50A Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=50A VGE=±15V RG=22 Ω VGE=0V IF=50A IF=50A T=25°C T=100°C T=25/50°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 2.00 – 2.25 – 1.75 – 2.00 – 6 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 1.85 – 1.95 – 1.60 – 1.70 – – – 4.1 – 5000 465 495 3305 3375 Unit Max. 1.0 200 8.5 2.35 – 2.10 – – 1.20 0.60 – 1.00 0.30 2.15 – 1.90 – 0.35 – – 520 3450 mA nA V V nF µs V µs mΩ Ω Κ Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.05 *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound. Unit Max. 0.45 0.73 – °C/W °C/W °C/W IGBT Module 6MBI50UA-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Tj= 125°C / chip 125 125 Collector current : Ic [A] 15V 12V VGE=20V 100 Collector current : Ic [A] VGE=20V 100 75 10V 50 15V 12V 75 10V 50 25 25 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip 125 10 T j=125°C Collector - Emitter voltage : VCE [ V ] T j=25°C 100 Collector current : Ic [A] 2 75 50 25 8 6 4 Ic=100A Ic=50A Ic= 25A 2 0 0 0 1 2 3 4 5 5 Collector-Emitter voltage : VCE [V] 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1M Hz, Tj= 25°C Vcc=600V, Ic=50A, Tj= 25°C 10.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies 1.0 Cres Coes VGE VCE 0 0.1 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 100 200 Gate charge : Qg [ nC ] 300 IGBT Module 6MBI50UA-120 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=22Ω, Tj= 25°C Vcc=600V, VGE=±15V, Rg=22Ω, Tj=125°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 ton toff tr 100 tf toff ton tr 100 0 25 50 75 0 100 25 50 75 100 Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, Ic=50A, VGE=±15V, Tj= 25°C Vcc=600V, VGE=±15V, Rg=22Ω 10000 10 1000 tr 100 tf Eoff(125°C) Eon(125°C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] ton toff 8 Eoff(25°C) 6 Eon(25°C) 4 Err(125°C) 2 10 Err(25°C) 0 10 100 1000 0 25 50 75 Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 22Ω ,Tj <= 125°C 125 40 100 Collector current : Ic [ A ] Eon 30 20 Eoff 10 75 50 25 Err 0 0 10 100 Vcc=600V, Ic=50A, VGE=±15V, Tj= 125°C 50 Switching loss : Eon, Eoff, Err [ mJ/pulse ] tf 10 10 Switching time : ton, tr, toff, tf [ nsec ] 1000 100 1000 0 400 800 1200 6MBI50UA-120 IGBT Module Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=600V, VGE=±15V, Rg=22Ω 125 1000 Forward current : IF [ A ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] T j=25°C 100 T j=125°C 75 50 25 trr (125°C) trr (25°C) 100 Irr (125°C) Irr (25°C) 10 0 0 1 2 3 0 4 Forward on voltage : VF [ V ] 25 50 75 100 Forward current : IF [ A ] Temperature characteristic (typ.) Transient thermal resistance (max.) 100 1.00 IGBT Resistance : R [ kΩ ] Thermal resistanse : Rth(j-c) [ °C/W ] FWD 0.10 0.01 0.001 10 1 0.1 0.010 0.100 Pulse width : Pw [ sec ] 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T emperature [°C ] IGBT Module 6MBI50UA-120 Outline Drawings, mm M636 ( ) shows reference dimension. Equivalent Circuit Schematic 15,16 25,26 U 23,24 3 4 27,28 9 10 5 6 1 2 V 21,22 7 8 W 19,20 11 12 13,14 17 18