1MX16/2MX8 BIT CMOS MASK ROM AC23C16200B Description The AC23C16200B high performance read only memory is organized either as 2,097,152 x 8 bit (byte mode) or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery operation. The large size of 16M bit memory density is ideal for character generator, data or program memory in micro-processor application. The AC23C16200B is packaged 44 SOP, 48TSOP-I and 44TSOP-II. Pin Description Key features • Switchable Organization Byte Mode : 2,097,152 X 8 bit Word Mode : 1,048,576 X 16 bit • Single 5V power supply operation • Access Time : 100/120ns (Max) • Standby Current : 50 (Max) • Operating Current : 60 (Max) • TTL compatible inputs and outputs • 3-State outputs for wired-OR expansion • Word or Byte switchable by BHE pin • Programmable CE or OE pin • Fully static operation • Package AC23C16200BFW : 44pin Plastic SOP(500mil) AC23C16200BTR : 48pin Plastic TSOP-1(12x20mm) AC23C16200BTF : 48pin Plastic TSOP-1(12x20mm) AC23C16200BTT : 44pin Plastic TSOP-II(400mil) Pin Function A0~A19 Address inputs Q0~Q14 Data Outputs Q15/A-1 Output Q15(Word Mode)/ LSB Address(Byte Mode) BHE Byte High Enable input (Word/Byte selection) CEB* Chip Enable input OEB* Output Enable input VCC Power supply VSS Ground NC No Connection * User selectable polarity Pin Configuration NC A18 1 44 2 3 4 43 42 41 5 6 40 39 A3 7 8 38 37 A2 9 36 A14 A1 A0 CEB 10 35 A15 A16 BHE A17 A7 A6 A5 A4 VSS OEB 11 12 13 44SOP 34 33 32 Q0 14 15 31 30 Q8 16 29 NC A19 A8 A9 A10 A11 A12 A13 VSS Q15/A-1 Q7 Q14 Q1 Q9 17 18 28 27 Q6 Q13 Q2 19 26 Q5 Q10 Q3 Q11 20 21 25 24 22 23 Q12 Q4 VCC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CEB VSS OEB Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 1 44 2 43 3 42 4 41 5 40 6 39 7 38 8 37 9 36 10 35 34 11 12 44TSOP 33 13 32 14 31 15 30 16 29 17 28 18 27 19 26 20 25 21 24 22 23 NC A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC AC23V16200BTT AC23C16200BFW Page 1 of 8 ARTCHIPs 1MX16/2MX8 BIT CMOS MASK ROM AC23C16200B BHE A16 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CEB 1 48 2 47 3 46 4 45 5 44 6 43 7 42 8 41 9 40 10 39 11 38 48TSOP-I (ROM TYPE) 12 13 37 36 14 35 15 34 16 33 17 32 18 31 19 30 20 29 21 28 22 27 23 26 24 25 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC NC NC NC NC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 VSS VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC VCC NC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OEB VSS VSS AC23C16200BTR 1 48 2 47 3 46 4 45 5 44 6 43 7 42 8 41 9 40 10 39 11 12 13 38 48TSOP-I (FLASH TYPE) 37 36 14 35 15 34 16 33 17 32 18 31 19 30 20 29 21 28 22 27 23 26 24 25 A16 BHE VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OEB VSS CEB A0 AC23C16200BTF Block Diagram A0~A19 X-PREDEC Y-PREDEC X-DECODER ADDRESS BUFFER MEMORY ARRAY 16MBIT ROM CELL Y-DECODER SENSE AMP CEB OEB BHE CONTROL CIRCUIT OUTPUT CIRCUIT Q0~Q15/A-1 Page 2 of 8 ARTCHIPs 1MX16/2MX8 BIT CMOS MASK ROM AC23C16200B Absolute Maximum Ratings Symbol Parameter Rating Unit TA Ambient Operating Temperature -10 ~ 80 TSTG Storage Temperature -65 ~ 150 VCC Supply Voltage to Ground Potential -0.5 ~ 7.0 V VOUT Output Voltage -0.5 ~ Vcc+0.5 V VIN Input Voltage -0.5 ~ Vcc+0.5 V Stress above those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied and exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions(VCC=5.0·0.5V, TA = 0 ~70×) Symbol Parameter Min Typ Max Unit Vcc Supply Voltage 4.5 5.0 5.5 V Vss Supply Voltage 0 0 0 V VIH Input High Voltage 2.2 VIL Input Low Voltage -0.3 Vcc+0.3 V 0.8 V DC Electrical Characteristics(VCC=5.0·0.5V, TA=0~70×) Symbol Parameter Condition VOH Output High Voltage IOH=-1mA VOL Output Low Voltage IOL=2.1mA IIL Input Leakage Current VIN=0V to VCC IOL Output Leakage Current VOUT=0V to VCC ICC Operating Supply Current (F=6.7MHz) Min Typ Max 2.4 Unit V 0.4 V 10 uA 10 uA CEB=OEB=VIL All Output Open 60 mA ISB1 Standby Current(TTL) CEB=VIH, all Output Open 1.0 mA ISB2 Standby Current(CMOS) CEB=VCC, all Output Open 50 uA Page 3 of 8 ARTCHIPs 1MX16/2MX8 BIT CMOS MASK ROM AC23C16200B Capacitance(TA=25×, f=1.0MHz) Symbol Parameter Condition Min Max Unit CI Input Capacitance VIN = 0V 10 pF CO Output Capacitance VOUT = 0V 10 pF Capacitance is periodically sampled and not 100% tested Function Table MODE Standby CEB/CE OEB/OE BHE X X High-Z H Data Out H/L 16bit Operating Q8 ~ Q14 Q15 ~A-1 L/H L L High-Z Active Data output (upper 8bit) Output Disable H/L POWER Standby Data output (lower 8bit) L/H 8bit Operating Q0 ~ Q7 X H High-Z X AC Characteristics(VCC=5.0·0.5V, TA=0~70×) Symbol AC23C16200B-10 Parameter AC23C16200B-12 Unit Min Max Min Max tRC Read cycle time tACE Chip enable access time 100 120 ns tAA Address access time 100 120 ns tAOE Output enable access time 50 60 ns tOH Output hold time from address change tHZ Output or chip disable to output High-Z tLZ Output or chip Enable to output Low-Z 100 0 0 20 10 ns 120 ns 20 10 ns ns AC Test Condition • Input pulse level • Input rise and fall time • Input and output timing level AC23C16200-10 AC23C16200-12 • Output load Page 4 of 8 0.4V to 2.4V 10ns 1.3V to 1.7V 0.8V to 2.0V 1 TTL gate and CL=100pF ARTCHIPs 1MX16/2MX8 BIT CMOS MASK ROM AC23C16200B Timing Waveforms Word Mode(BHE=VIH) tRC ADD A0~A19 ADD1 ADD2 tHZ tACE CEB:ACTIVE LOW CE/CEB CE:ACTIVE HIGH tAOE tAA OEB:ACTIVE LOW OE/OEB OE:ACTIVE HIGH tLZ tLZ Q0~Q15 tOH VALID Byte Mode(BHE=VIL) VALID tRC ADD A0~A19 A-1 ADD1 ADD2 tHZ tACE CEB:ACTIVE LOW CE/CEB CE:ACTIVE HIGH tAOE tAA OEB:ACTIVE LOW OE/OEB OE:ACTIVE HIGH tLZ Q0~Q7 Q8~Q15 Page 5 of 8 tLZ tOH VALID VALID HIGH-Z ARTCHIPs 1MX16/2MX8 BIT CMOS MASK ROM AC23C16200B Package Dimension Unit : mm 44SOP O 0~10 0.730 MIN 1.030 MAX 16.050 BSC 12.800 MAX 12.400 MIN 28.000 MIN 28.550 MAX 0.090 MIN 0.250 MAX 2.500 MIN 2.900 MAX 0.250 MIN 1.270 0.450 MAX BSC 3.100 MAX 44TSOP-II O 0~8 0.400 MIN 0.600 MAX #1 0.950 MIN 1.050 MAX BASIC BASIC 10.160 #44 11.760 18.410 BASIC 0.120 MIN 0.210 MAX 1.200 MAX 0.260 MIN 0.450 MAX Page 6 of 8 0.800 BSC 0.050 MIN 0.150 MAX ARTCHIPs 1MX16/2MX8 BIT CMOS MASK ROM AC23C16200B Unit : mm 48TSOP-I 0~8 0.170 MIN 0.500 BSC 0.700 MAX 0.400 MIN 18.300 MIN 18.500 MAX 0.270 MAX 20.150 MAX 19.850 MIN O 0.100 MIN Page 7 of 8 1.050 MAX 11.910 MIN 12.120 MAX 0.050 MIN 0.150 MAX 1.200 MAX 0.950 MIN 0.200 MAX ARTCHIPs 1MX16/2MX8 BIT CMOS MASK ROM AC23C16200B Revision History Rev No. Date Contents rev0 10-Mar-2001 rev1 20-Jun-2001 Package added (AC23C16200BTR, AC23C16200BTT) rev2 15-Sep-2001 Package added (AC23C16200BTF) rev3 09-Jan-2002 Package dimension modified rev4 16-June-2003 42 DIP package exempted Page 8 of 8 ARTCHIPs