ETC AH110

AH110
The Communications Edge TM
Product Information
0.2 Watt, High Linearity InGaP HBT Amplifier
Product Features
Product Description
x 50 – 2000 MHz
The AH110 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve performance over a broad range with +39
dBm OIP3 and +23 dBm of compressed 1-dB power and is
housed in an industry standard SOT-89 SMT package. All
devices are 100% RF and DC tested.
x +23 dBm P1dB
x +39 dBm Output IP3
x 20.5 dB Gain @ 900 MHz
x 17.6 dB Gain @ 1900 MHz
x Single Positive Supply (+8V)
The product is targeted for use as a gain block/driver
amplifier for various current and next generation wireless
technologies such as GPRS, GSM and CDMA, where high
linearity and medium power is required. In addition, the
AH110 will work for numerous other applications within
the 50 to 2000 MHz frequency range.
x SOT-89 SMT Package
Applications
x Mobile Infrastructure
x Defense/Homeland Security
Specifications (1)
Parameters
Functional Diagram
GND
4
1
2
3
RF IN
GND
RF OUT
AH110-89 / AH110-89G
Typical Performance (5)
Units
Test Frequency
Gain
Output P1dB
Output OIP3
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
IS-95A Channel Power
MHz
dB
dBm
dBm
MHz
dB
dB
dB
dBm
dBm
Noise Figure
Operating Current Range (3)
Device Voltage (4)
dB
mA
V
@ -45 dBc ACPR, 1900 MHz
Min
17
+36.5
Typ
Max
900
20.5
+23
+39
1900
17.6
17
7.4
+23
+38
Parameters
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3 (2)
IS-95A Channel Power (6)
Noise Figure
Supply Bias
+16
85
5.2
100
5
Typical
MHz
dB
dB
dB
dBm
dBm
dBm
dB
900
1900
20.5
17.6
-20
-17
-9.5
-7.4
+22.8
+23
+39
+38
+17
+16
5
5.2
+8 V @ 100 mA
5. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +8 V, Icc =
100 mA, +25 C, Rbias = 30 .
6. This is measured with an IS-95 signal at (9 ch. Fwd)–45dBc ACPR.
dBm
Units
135
1. Test conditions unless otherwise noted: 25 C, Vsupply = +8V, in tuned application circuit with
Rbias = 30 .
2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. The tuned
application circuit is tuned for optimum ACPR performance. An improvement in OIP3 of 2 to 3
dB can be achieved for tuning for optimum OIP3 (with slightly degraded ACPR performance).
3. This corresponds to the quiescent current or operating current under small-signal conditions.
4. This device requires a minimum 7 V power supply through a dropping resistor. 8 V and 30 ohms
are recommended for proper operation. Operation of the device directly to a 5 V supply could lead
to thermal damage to the device.
Absolute Maximum Rating
Parameters
Rating
Ordering Information
Part No.
Description
Operating Case Temperature
-40 to +85 qC
Storage Temperature
-55 to +150 qC
AH110-89G
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
+15 dBm
+6 V
150 mA
1.5 W
+250 qC
AH110-89PCB900
AH110-89PCB1900
InGaP HBT Gain Block
AH110-89
(leaded SOT-89 Pkg)
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Pkg)
900 MHz Evaluation Board
1900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
AH110
The Communications Edge TM
Product Information
0.2 Watt, High Linearity InGaP HBT Amplifier
Typical Device Data
S-parameters (Vdevice = +5V, Icc = 100 mA, 25 C, unmatched 50 ohm system)
S11
0.
4
0
3.
25
1.0
Swp Max
2.01283GHz
2.
0
0
3.
0
4.
0
4.
5 .0
5. 0
0. 2
0.2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10.0
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.2
20
0.4
10.0
0
Gain (dB)
0.8
2.
0
DB(GMax)
6
0.
1.0
0.8
6
0.
DB(|S[2,1]|)
S22
Swp Max
2.01283GHz
0.
4
Gain / Maximum Stable Gain
30
-10.0
-3
.0
-1.0
Swp Min
0.01483GHz
-0.8
-0
.6
.0
-2
2
-1.0
1.5
-0.8
1
Frequency (GHz)
-0
.6
0.5
.4
.0
-2
-4
.0
-5 .
0
0
-0
-3
.0
.4
-0
10
2
-0 .
-4
.0
-5 .
0
2
- 0.
-10.0
15
Swp Min
0.01483GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that
actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 2500 MHz, with markers placed at 0.25 – 2 GHz in 0.25 GHz increments.
S-Parameters (Vdevice = +5 V, Icc = 100 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2500
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-5.21
-4.92
-4.72
-4.31
-4.10
-4.19
-4.63
-5.64
-7.84
-13.52
-19.89
-6.99
-2.84
-1.18
-0.78
-158.20
-170.08
-177.73
173.22
163.26
152.57
140.41
126.43
109.08
83.27
-85.25
-131.98
-160.75
177.40
167.87
27.34
25.32
24.15
22.43
20.91
19.68
18.82
18.35
18.13
18.12
17.78
16.44
14.09
10.90
9.28
141.96
144.95
138.50
118.30
100.56
85.04
69.98
54.85
38.12
17.54
-7.75
-37.07
-64.48
-86.11
-96.04
-32.11
-31.61
-31.37
-30.63
-30.32
-29.78
-29.74
-29.31
-29.86
-31.16
-34.99
-34.48
-29.33
-26.64
-25.96
16.29
9.45
6.88
7.98
5.52
2.65
-2.18
-11.26
-26.72
-52.52
-105.12
161.53
106.22
75.52
66.16
-6.58
-7.49
-7.96
-8.46
-8.81
-9.07
-9.12
-8.95
-8.04
-6.16
-3.43
-1.36
-0.69
-0.93
-1.28
-132.30
-157.02
-171.72
178.73
174.06
171.40
169.67
170.98
175.14
179.09
176.43
164.56
149.67
136.25
130.16
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
C12
C7
C9
C8
Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors.
The markers and vias are spaced in .050” increments.
C7/C8 are for 900 MHz matching circuits and C9/C12 are for 1900 MHz matching circuits.
.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
AH110
The Communications Edge TM
Product Information
0.2 Watt, High Linearity InGaP HBT Amplifier
900 MHz Application Circuit (AH110-89PCB900)
Typical RF Performance at 25qC
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
8v
900 MHz
20.5 dB
-20 dB
-9.5 dB
+22.8 dBm
+39 dBm
Channel Power
Noise Figure
Device Voltage
Quiescent Current
CAP
PORT
ID= C6
P= 1
Z= 50 Ohm C= 56 pF
+17 dBm
(@-45 dBc ACPR, IS-95 9 channels fwd)
5 dB
+5 V
100 mA
+85°C
-40°C
900
920
940
-15
-20
-25
+25°C
-30
+85°C
-35
-40°C
-40
840
860
P1 dB (dBm)
4
+25°C
+85°C
880
900
920
940
920
940
-40
-50
+25°C
22
+85°C
-40°C
20
840
860
880
900
32
920
940
Frequency (MHz)
+85°C
-40°C
-70
12
13
920
940
38
36
-15
10
35
Temperature (°C)
60
15
16
17
18
OIP3 vs. Output Power
Freq. = 900, 901 MHz, +25°C
42
32
-40
14
Output Channel Power (dBm)
34
900
940
+25°C
-65
OIP3 (dBm)
OIP3 (dBm)
34
920
-60
40
36
900
-55
OIP3 vs. Temperature
Fre. = 900, 901 MHz, +9 dBm / tone
42
880
IS-95, 9 Ch. Fw d, ±885 KHz offset, 30 KHz Meas. BW, 900 MHz
Frequency (MHz)
38
880
860
ACPR vs. Channel Power
23
OIP3 vs. Frequency
+25°C, +9 dBm / tone
860
-40°C
Frequency (MHz)
-45
40
30
840
+85°C
-25
840
24
Frequency (MHz)
42
900
21
-40°C
860
+25°C
P1 dB vs. Frequency
25
6
0
840
-15
Frequency (MHz)
Noise Figure vs. Frequency
2
-10
-20
880
Frequency (MHz)
8
S22 vs. Frequency
-5
ACPR (dBc)
880
CAP
ID= C5
C= 56 pF
RES
ID= R5
R= 50 Ohm
0
S22 (dB)
S11 (dB)
S21 (dB)
+25°C
860
CAP
ID= C1
C= 56 pF
PORT
P= 2
Z= 50 Ohm
CAP
ID= C8
C= 0.8 pF
-10
20
NF (dB)
CAP
ID= C7
C= 5.6 pF
S11 vs. Frequency
0
22
OIP3 (dBm)
SUBCKT
AH110 900 MHz
-5
16
840
IND
ID= L1
L= 10 nH
C7 is placed at silkscreen marker ‘C’ or center of component placed at 5.6 deg. @ 900 MHz away from pin 1. C8 is
placed at 22 deg. @ 900 MHz away from pin 3.
S21 vs. Frequency
18
CAP
ID= C3
CAP
ID= C2
C= 1000 pF
CAP
ID= C4
C= 56 pF
RES
ID= R4
R= 22 Ohm
Please see note 2 on page 1.
24
RES
ID= R1
R= 30 Ohm
8.2v zener
IND
ID= L2
L= 33 nH
(+9 dBm / tone, 1 MHz spacing)
RES
ID= R2
R= 390 Ohm
RES
ID= R3
R= 220 Ohm
C = .1uF
40
38
36
34
32
85
6
7
8
9
10 11 12
Output Power (dBm)
13
14
.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
AH110
The Communications Edge TM
Product Information
0.2 Watt, High Linearity InGaP HBT Amplifier
1900 MHz Application Circuit (AH110-89PCB1900)
Typical RF Performance at 25qC
1900 MHz
17.6 dB
-17 dB
-7.4 dB
+23 dBm
RES
ID= R3
R= 220 Ohm
+38 dBm
Channel Power
+16 dBm
Noise Figure
Device Voltage
Quiescent Current
5.2 dB
+5 V
100 mA
(@-45 dBc ACPR, IS-95 9 channels fwd)
25
PORT
P= 1
Z= 50 Ohm
S11 (dB)
S21 (dB)
20
+85°C
5
-40°C
-10
-4
+85°C
-6
-40°C
+25°C
-15
+85°C
-40°C
+25°C
-8
-10
-12
1850 1870 1890 1910 1930 1950 1970 1990
Frequency (MHz)
ACPR vs. Channel Power
P1 dB vs. Frequency
IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas. BW, 1900 MHz
-35
-40
23
P1 dB (dBm)
+25°C
2
+85°C
1
-40°C
21
19
+25°C
+85°C
17
0
1850 1870 1890 1910 1930 1950 1970 1990
-40°C
15
1850 1870 1890 1910 1930 1950 1970 1990
Frequency (MHz)
Frequency (MHz)
OIP3 vs. Frequency
+25°C, +9 dBm / tone
40
Frequency (MHz)
-60
11
12
13
14
15
16
17
18
Output Power (dBm)
OIP3 vs. Output Power
Freq. = 1900, 1901 MHz, 25°C
42
38
36
34
32
1850 1870 1890 1910 1930 1950 1970 1990
-55
10
OIP3 (dBm)
OIP3 (dBm)
34
-50
-70
40
36
-45
-65
OIP3 vs. Temperature
freq. = 1900, 1901 MHz, +9 dBm / tone
42
38
PORT
P= 2
Z= 50 Ohm
-2
25
3
CAP
ID= C5
C= 56 pF
S22 vs. Frequency
Frequency (MHz)
4
CAP
ID= C1
C= 56 pF
CAP
ID= C7
C= 1.5 pF
-5
Noise Figure vs. Frequency
5
NF (dB)
SUBCKT
AH110 1.9GHz
-25
1850 1870 1890 1910 1930 1950 1970 1990
6
42
IND
ID= L1
L= 15 nH
0
Frequency (MHz)
OIP3 (dBm)
IND
ID= L3
L= 1 nH
CAP
ID= C10
C= 0.7 pF
-20
0
1850 1870 1890 1910 1930 1950 1970 1990
7
CAP
ID= C2
C= 1000 pF
S11 vs. Frequency
0
+25°C
CAP
ID= C4
C= 56 pF
CAP
ID= C3
C9 placed at silkscreen marker ‘8” or center of component placed at 39 deg. @ 1900 MHz away from pin 1.
C12 is placed at silkscreen marker ‘I” or center of component placed at 43 deg. @ 1.9 GHz away from pin 1.
S21 vs. Frequency
10
CAP
ID= C6
C= 56 pF
RES
ID= R4
R= 22 Ohm
Please see note 2 on page 1.
15
RES
ID= R1
R= 30 Ohm
8.2v zener
ACPR (dBc)
C = .1uF
IND
ID= L2
L= 15 nH
(+9 dBm / tone, 1 MHz spacing)
RES
ID= R2
R= 390 Ohm
S22 (dB)
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
8v
40
38
36
34
32
32
-40
-15
10
35
Temperature (°C)
60
6
85
7
8
9
10
11
12
13
14
Output Power (dBm)
.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
AH110
The Communications Edge TM
Product Information
0.2 Watt, High Linearity InGaP HBT Amplifier
AH110 (SOT-89 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Product Marking
The component will be marked with an
“AH110” designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes between 500 and 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235 C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135” ) diameter drill and have a final plated
thru diameter of .25 mm (.010” ).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board
in the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees
Land Pattern
Thermal Specifications
Parameter
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tjc (2)
-40 to +85q C
128q C / W
149q C
MTTF vs. GND Tab Temperature
100000
Notes:
1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C.
2. This corresponds to the typical biasing condition of
+5V, 100 mA at an 85 C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 247 C.
10000
1000
100
60
70
80
90
100
110
120
Tab Temperature (°C)
.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
AH110
The Communications Edge TM
Product Information
0.2 Watt, High Linearity InGaP HBT Amplifier
AH110-G (Green / Lead-free SOT-89 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260qC reflow temperature) and leaded
(maximum 245qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Product Marking
Outline Drawing
The component will be marked with an
“ AH110G” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “ Application
Notes” section.
MSL / ESD Rating
ESD Rating:
Value:
Test:
Standard:
Land Pattern
Class 1A
Passes between 250 and 500V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260 C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
Thermal Specifications
Parameter
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tjc (2)
-40 to +85q C
128q C / W
149q C
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135” ) diameter drill and have a final plated
thru diameter of .25 mm (.010” ).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board
in the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees.
MTTF vs. GND Tab Temperature
100000
Notes:
1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C.
2. This corresponds to the typical biasing condition of
+5V, 100 mA at an 85 C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 247 C.
10000
1000
100
60
70
80
90
100
110
120
Tab Temperature (°C)
.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004