Rev3: Nov 2004 AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AOD410L( Green Product ) is offered in a lead-free package. VDS (V) = 30V ID = 8A RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=100°C Pulsed Drain Current Avalanche Current B C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V A 20 IAR 8 A EAR 10 mJ 6 25 2.1 W 1.33 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 12.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C ±20 ID IDM PD TC=100°C TA=25°C Power Dissipation A Units V 8 TC=25°C Continuous Drain Current G Maximum 30 RθJA RθJL Typ 20 46 5.3 Max 30 60 7 Units °C/W °C/W °C/W AOD410, AOD410L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 Typ 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 10 TJ=55°C 5 nA 1.8 3 V 48 65 76 100 VGS=4.5V, ID=2A 75 105 A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=8A 6.2 VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.75 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 100 VGS=10V, ID=8A Coss Units V VDS=24V, V GS=0V IDSS IS Max VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, V DS=15V, ID=8A mΩ mΩ S 1 V 4.3 A 288 pF 57 pF 39 pF 3 Ω 6.72 nC 3.34 nC 0.76 nC Qgs Gate Source Charge Qgd Gate Drain Charge 1.78 nC tD(on) Turn-On DelayTime 3.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=10V, V DS=15V, R L=1.8Ω, RGEN=3Ω 3.7 ns 15.6 ns 2.6 ns IF=8A, dI/dt=100A/µs 12.6 IF=8A, dI/dt=100A/µs 5.1 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD410, AOD410L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10V 8V 6V 15 ID (A) 10 5V 4.5V 8 4V 6 10 4 3.5V 5 125°C 2 VGS=3V 25°C 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1.5 5 100 2.5 4.5 Normalized On-Resistance ID=8A VGS=4.5V 1.6 70 VGS=10V 1.4 60 1.2 VGS=10V 50 40 1 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 175 1.0E+01 150 1.0E+00 ID=8A 50 75 100 125 150 175 1.0E-01 125°C 100 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature IS (A) RDS(ON) (mΩ) 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 1.8 VGS=4.5V 80 125 2 2 90 RDS(ON) (mΩ) VDS=5V ID(A) 20 1.0E-02 125°C 25°C 1.0E-03 75 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER M 1.0E-04 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZ 50 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 1.0E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 20 46 5.3 0.2 7 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD410, AOD410L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=15V ID=8A 400 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 300 200 Coss Crss 100 0 0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics 8 100.0 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 30 TJ(Max)=150°C TA=25°C 20 Power (W) ID (Amps) 10µs 1ms RDS(ON) limited 10.0 100µs 10ms 0.1s 10 1s 1.0 TJ(Max)=150°C TA=25°C 10s 0 0.001 DC 0.1 0.1 ZθJA Normalized Transient Thermal Resistance 10 1 10 (Volts) Biased Safe VDS Figure 9: Maximum Forward Operating Area (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER M COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZ Single Pulse OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 20 46 5.3 PD Ton 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 7T 100 1000