ETC BT136-D

Preliminary
BT136-D
SemiWell Semiconductor
Bi-Directional Triode Thyristor
Symbol
○
Features
2.T2
▼▲
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
◆ High Commutation dv/dt
◆ Sensitive Gate Triggering 4 Mode
◆ Non-isolated Type
◆
○
◆
1.T1
3.Gate
○
TO-220
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
1
2
3
Absolute Maximum Ratings
Symbol
( TJ = 25°C unless otherwise specified )
Parameter
Condition
VDRM
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current
TC = 107 °C
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2t for Fusing
t = 10ms
I2 t
PGM
PG(AV)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Over any 20ms period
Ratings
Units
600
V
4
A
25/27
A
3.1
A2 s
5
W
0.5
W
IGM
Peak Gate Current
2
A
VGM
Peak Gate Voltage
5
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
TJ
TSTG
Mar, 2004. Rev. 0
1/5
[email protected] Semiconductor Co., Ltd., All rights reserved.
BT136-D
Electrical Characteristics
Symbol
Items
Ratings
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
─
─
0.5
mA
VTM
Peak On-State Voltage
IT = 5 A, Inst. Measurement
─
─
1.7
V
─
─
5
─
─
5
I+GT1
Ⅰ
I -GT1
Ⅱ
Gate Trigger Current
VD = 6 V, RL=10 Ω
mA
I -GT3
Ⅲ
─
─
5
I+GT3
Ⅳ
─
─
12
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
V
V-GT3
Ⅲ
─
─
1.5
V+GT3
Ⅳ
─
─
2.5
VGD
(dv/dt)c
IH
Rth(j-c)
2/5
Conditions
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
0.2
─
─
V
Critical Rate of Rise Off-State
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -0.75 A/ms,
VD=2/3 VDRM
5.0
─
─
V/㎲
─
5
─
mA
─
─
3.0
°C/W
Holding Current
Thermal Impedance
Junction to case
BT136-D
Fig 1. Gate Characteristics
10
Fig 2. On-State Voltage
2
1
10
VGK = 5V
PGK = 5W
On-State Current [A]
25℃
10
0
IGM=2A
Gate Voltage [V]
PG(AV) = 0.5W
1
10
o
125 C
0
10
o
25 C
VGD = 0.2V
10
-1
-1
10
10
1
10
2
10
0.5
3
1.0
1.5
Gate Current [mA]
2.5
3.0
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
7
θ
2π
5
360°
θ
4
θ = 180
o
θ = 150
o
θ = 120
o
: Conduction Angle
3
θ = 90
o
θ = 60
o
θ = 30
o
o
π
θ
Allowable Case Temperature [ C]
130
6
Power Dissipation [W]
2.0
On-State Voltage [V]
2
1
0
0
1
2
3
4
120
θ
π
o
o
θ = 90
o
2π
θ
110
θ = 30
θ = 60
θ = 120
o
o
θ = 150
o
θ = 180
360°
θ
: Conduction Angle
100
5
0
1
2
RMS On-State Current [A]
3
4
5
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
35
10
15
10
o
o
60Hz
20
VGT (25 C)
25
VGT (t C)
Surge On-State Current [A]
30
1
50Hz
5
0
0
10
10
1
10
Time (cycles)
2
10
3
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/5
BT136-D
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
1
10
0
o
IGT (25 C)
o
IGT (t C)
o
Transient Thermal Impedance [ C/W]
10
1
I
+
I
-
I
-
GT1
GT1
GT3
I
+
GT3
10
0.1
-50
0
50
100
150
-1
10
-3
10
-2
10
-1
10
0
10
1
10
2
Time (sec)
o
Junction Temperature [ C]
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
▼▲
6V
▼▲
●
A
V
4/5
10Ω
▼▲
●
6V
RG
10Ω
A
V
●
6V
RG
▼▲
A
V
RG
6V
●
A
V
●
●
●
●
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
Test Procedure Ⅳ
RG
BT136-D
TO-220 Package Dimension
Dim.
mm
Typ.
Min.
9.7
6.3
9.0
12.8
1.2
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Max.
10.1
6.7
9.47
13.3
1.4
Inch
Typ.
Min.
0.382
0.248
0.354
0.504
0.047
1.7
2.5
0.067
0.098
3.0
1.25
2.4
5.0
2.2
1.25
0.45
0.6
3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0
φ
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
3.6
E
B
Max.
0.398
0.264
0.373
0.524
0.055
0.142
H
A
φ
I
F
C
M
L
G
1
D
2
1. T1
2. T2
3. Gate
3
J
N
O
K
5/5