MOS FET MKV670 130 (Tc=25ºC) 400 mJ ºC 150 ºC –40 to +150 1 PW 100µs, duty 1% 2 VDD=20V, L=10mH, I L=7.5A, unclamped, RG=50Ω Electrical Characteristics Symbol Test Conditions V (BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr R th (ch-c) R th (ch-a) ID =100µA, VGS =0V VGS =±20V VDS =60V, VGS =0V VDS =10V, ID =250µA VDS =10V, ID =35A VGS =10V, ID =35A VDS =10V f =1.0MHz VGS =0V ID =20A VDD 20V RG =22Ω VGS =10V ISD =50A, VGS =0V ISD =25A, d i /d t=50A/µs (Ta=25ºC) min Ratings typ max 60 2.0 30 3.0 5.5 4500 2200 1030 100 200 250 150 0.9 110 ±10 100 4.0 6.5 1.5 0.961 35.71 External Dimensions Unit V µA µA V S mΩ pF pF pF ns ns ns ns V ns ºC/W ºC/W 15.6±0.4 13.6 9.6 1.8 5.0±0.2 Unit V V A A W 2.0 Ratings 60 ±30 ±70 ±140 19.9±0.3 4.0 Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg 4.8±0.2 2.0±0.1 3.2±0.1 a b 2 20.0 min 4.0 max Absolute Maximum Ratings (Ta=25ºC) 3 +0.2 1.05 – 0.1 5.45±0.1 5.45±0.1 +0.2 0.65 – 0.1 1.4 15.8±0.2 (1) (2) (3) (1). Gate (2). Drain (3). Source a) Part No. b) Lot No. (Unit: mm) 000