ETC RMDA1840

RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
PRODUCT INFORMATION
Description
Features
The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point
to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The
RMDA1840 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of
applications, such as a driver amplifier or a frequency multiplier.
4 mil substrate
Small-signal gain 22 dB (typ.)
Pout 1 dB comp 23 dBm (typ.)
Chip size 4.67 mm x 2.00 mm
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Units
Vd
Vg
Vdg
ID
PIN
TC
Tstg
RJC
+6
-2
+8
442
+15
-30 to +85
-55 to +125
53
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Positive DC voltage (+5 V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Electrical
Characteristics
(At 25°C),
50 Ω system,
Vd = +5 V,
Quiescent
Current
Idq = 400 mA
Parameter
Frequency Range
Gate Supply Voltage (Vg)1
Gain Small Signal at
Pin = -5 dBm
Gain Variation vs
Frequency
Gain at 1dB Compression
Power Output at 1 dB
Compression
Min
Typ
18
20
Max Unit
Parameter
40
Power Output Saturated:
Pin = +3 dBm
Power Added Efficiency
(PAE): at P1dB
Input Return Loss
(Pin = -5 dBm)
Output Return Loss
(Pin = -5 dBm)
-0.2
GHz
V
22
dB
+/-2.5
21
dB
dB
23
Min
Typ
Max Unit
21
24
dBm
15
%
8
dB
10
dB
dBm
Notes:
1. Typical range of gate voltage is -1.0 to 0 V to set Idq of 400 mA.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised January 15, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
PRODUCT INFORMATION
Application
Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Recommended
Procedure
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
CAUTION: LOSS OF GATE VOLTAGES (Vg) WHILE DRAIN VOLTAGES (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier.
Step 1: Turn off RF input power.
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
Step 2: Connect the DC supply grounds to the grounds
frequency band.
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg.
Step 6: Follow turn-off sequence of:
Step 3: Slowly apply positive drain bias supply voltage
(i) Turn off RF input power,
of +5 V to Vd.
(ii) Turn down and off drain voltage (Vd),
Step 4: Adjust gate bias voltage to set the quiescent
(iii) Turn down and off gate bias voltage (Vg).
current of Idq = 400 mA.
for Biasing and
Operation
Figure 1
Functional Block
Diagram
Drain Supply Drain Supply
Vd1
Vd2
Drain Supply
Vd3
Drain Supply
Vd4
MMIC Chip
RF IN
RF OUT
Ground
Back of Chip
Gate Supply
Vg1
Gate Supply
Vg2
Gate Supply
Vg3
Gate Supply
Vg4
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised January 15, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
PRODUCT INFORMATION
Figure 2
Chip Layout and Bond
Pad Locations
Dimensions in mm
1.50
2.44
3.16
4.15
4.57
2.00
Chip Size is 4.67 mm x
2.0 mm x 100 µm. Back
of chip is RF and DC
ground
1.06
0.83
0.60
0.0
2.35
1.23
0.0
3.22
3.84
4.67
0.11
Figure 3
Recommended
Application Schematic
Circuit Diagram
Drain Supply
Vd = +5 V
L
10,000pF
100pF
L = Bond Wire Inductance
L
L
L
10,000pF
L
L
100pF
100pF
L
L
100pF
L
L
MMIC Chip
RF OUT
RF IN
Ground
(Back of Chip)
L
L
100pF
100pF
L
10,000pF
L
L
L
L
100pF
100pF
L
L
L
10,000pF
Gate Supply
Vg
Note: For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used
to measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised January 15, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
PRODUCT INFORMATION
Figure 4
Recommended
Assembly Diagram
Vd (Positive)
10,000pF
10,000pF
Die-Attach
80Au/20Sn
100pF
100pF
100pF
100pF
5mil Thick
Alumina
50-Ohm
5 mil
Thick
Alumina
50-Ohm
RF
Input
RF
Output
100pF
100pF
100pF
100pF
2 mil Gap
10,000pF
Vg (Negative) 10,000pF
L< 0.015”
(4 Places)
Note Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. If output
power level detection is not desired, do not make connection to detector bond pad.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised January 15, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
PRODUCT INFORMATION
Performance
Data
Pout vs. Pin
Vd = 5V, Id = 400mA
27
Pout (dBm)
25
23
18 GHz
21
29 GHz
19
40 GHz
17
15
-6
-4
-2
0
2
4
Pin (dBm)
Gain vs. Pin
Vd = 5V, Id = 400mA
23
22.5
Gain (dB)
22
21.5
18 GHz
21
29 GHz
20.5
40 GHz
20
19.5
19
-6
-4
-2
0
2
4
Pin (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised January 15, 2001
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
PRODUCT INFORMATION
Performance
Data
Gain vs. Frequency
Power In = -5, 0, +5 dBm Vd = 5V, Id = 400mA
30
Gain
(dB)
Power
Out
(dBm)
28
Pin = -5 dBm
26
24
Pin = 0 dBm
22
Pin = +5 dBm
20
18
16
18
20
22
24
26
28
30
32
34
36
38
40
34
36
38
40
Frequency (GHz)
S21, S11, S22 Mag
vs. Frequency Vd = 5V, Id = 400mA
30
S21, S11, S22 Mag (dB)
S21
20
10
0
S11
-10
-20
S22
-30
18
20
22
24
26
28
30
32
Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised January 15, 2001
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Worldwide Sales
Representatives
PRODUCT INFORMATION
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www.raytheon.com/micro
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Raytheon
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Characteristic performance data and specifications are subject to change without notice.
Revised January 15, 2001
Page 7
Raytheon RF Components
362 Lowell Street
Andover, MA 01810