ETC SMA5125

SMA5125
N-channel + P-channel
3-phase motor drive
External dimensions B
Absolute maximum ratings
(Ta=25°C)
Ratings
Symbol
Unit
N channel
P channel
VDSS
60
–60
V
VGSS
±20
±20
V
ID
10
–10
A
ID(pulse)
15 (PW≤1ms, duty≤25%)
–15 (PW≤1ms, duty≤25%)
A
4 (Ta=25°C, with all circuits operating, without heatsink)
W
30 (Tc=25°C,with all circuits operating, with infinite heatsink)
W
θ j-a
31.25 (Junction-Air, Ta=25°C, with all circuits operating)
°C/W
θ j-c
4.166 (Junction-Case, Tc=25°C, with all circuits operating)
°C/W
Tch
150
°C
Tstg
–40 to +150
°C
PT
•••
■Equivalent circuit diagram
1
Pch 2
8
9
3
Nch 4
7
6
10
11
5
12
Characteristic curves
ID-VDS Characteristics (Typical)
N-ch
15
14
ID-VGS Characteristics (Typical)
P-ch
(Ta=25°C)
–15
4.0V
–12
10
–10
14
12
10
3.3V
6
ID (A)
ID (A)
ID (A)
3.5V
8
–3.5V
–8
–3.3V
3.0V
2
–3.0V
–4
4
VGS=–2.7V
–2
VGS=2.7V
8
6
–6
4
(VDS=10V)
15
–4.0V
–10V
10V
–14
12
N-ch
(Ta=25°C)
Tc=125°C
2
25°C
–40°C
0
0
0
2
4
6
8
10
0
–2
–4
VDS (V)
–6
–8
0
–10
0
1
VDS (V)
2
3
4
5
VGS (V)
RDS(ON)-ID Characteristics (Typical)
Ta=25°C
VGS=4V
N-ch
0.20
Ta=25°C
VGS=–10V
P-ch
0.20
P-ch
(VDS=–10V)
–15
–14
0.08
–10
0.12
ID (A)
(ON) (Ω)
0.12
RDS
(ON) (Ω)
RDS
–12
0.16
0.16
–8
–6
0.08
Tc=40°C
–4
25°C
0.04
0.04
–40°C
–2
0
0
0
2
4
6
8
10
12
0
14 15
–2
–4
–6
–8
–10
–12
–14 –15
ID (A)
ID (A)
ID=5A
VGS=4V
0.20
P-ch
0.20
(ON) (Ω)
RDS
(ON) (Ω)
RDS
0.12
0.08
0.04
0
–40
0.12
0.08
0.04
0
50
TC (°C)
140
ID=–5A
VGS=–10V
0.16
0.16
100
150
0
–40
0
50
TC (°C)
0
–1
–2
–3
VGS (V)
RDS(ON)-TC Characteristics (Typical)
N-ch
0
100
150
–4
–5
SMA
SMA5125
Electrical characteristics
(Ta=25°C)
N channel
Symbol
Specification
min
V(BR)DSS
typ
max
60
P channel
Specification
Unit
Conditions
V
ID=100µA, VGS=0V
min
typ
max
Unit
Conditions
V
ID=–100µA, VGS=0V
–60
IGSS
±10
µA
VGS=±20V
±10
µA
VGS=±20V
IDSS
100
µA
VDS=60V, VGS=0V
–100
µA
VDS=–60V, VGS=0V
2.0
V
VDS=10V, ID=250µA
S
VDS=10V, ID=5A
VTH
1.0
Re(yfs)
8.0
–1.0
–2.0
8.7
V
VDS=–10V, ID=–250µA
S
VDS=–10V, ID=–5A
Ω
VGS=4V, ID=5A
pF
VDS=10V,
225
pF
f=1.0MHz,
50
pF
VGS=0V
td (on)
25
ns
ID=5A, VDD 20V,
tr
110
ns
RL=4Ω, VGS=5V,
td (off)
90
ns
RG=50Ω,
180
ns
RG=50Ω,
tf
55
ns
see Fig.3 on page 16.
100
ns
see Fig.4 on page 16.
VSD
1.15
ns
ISD=10A, VGS=0V
–1.25
V
ISD=–10A, VGS=0V
trr
75
V
ISD=5A, di/dt=100A/µs
100
ns
ISD=–5A, di/dt=100A/µs
RDS(ON)
0.14
Ciss
460
Coss
Crss
Ω
VGS=–10V, ID=–5A
pF
VDS=–10V,
440
pF
f=1.0MHz,
120
pF
VGS=0V
50
ns
ID=–5A, VDD –20V,
170
ns
RL=4Ω, VGS=–5V,
0.14
1200
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
20
(VDS=10V)
Safe Operating Area (SOA)
P-ch
20
10
(VDS=–10V)
N-ch
20
10
100µs
10
IT
M
ID (A)
25°C
1
RD
S
(O
N)
LI
Re (yfs) (S)
Re (yfs) (S)
ms
1
10
25°C
s
ED
1m
Tc=–40°C
Tc=40°C
1
125°C
125°C
0.1
0.05
Single Pulse
Tc=25°C
0.1
1
10
0.1
–0.05 –0.1
20
ID (A)
0.1
0.1
–10 –20
–1
1
10
100
VDS (V)
ID (A)
Capacitance-VDS Characteristics (Typical)
N-ch
P-ch
VGS=0V
(Ta=25°C) f=1MHz
5000
VGS=0V
(Ta=25°C) f=1MHz
5000
P-ch
–20
100µs
s
1m
–10
IT
M
LI
N)
(O
S
100
RD
ID (A)
Capacitance (pF)
Coss
–1
Crss
Crss
10
0
10
20
30
40
Single Pulse
Tc=25°C
10
50
0
–10
–20
VDS (V)
–30
–40
–50
–0.1
–0.1
–1
IDR-VSD Characteristics (Typical)
(Ta=25°C)
15
14
–10
–100
VDS (V)
VDS (V)
N-ch
PT-Ta Characteristics
P-ch
(Ta=25°C)
–15
–14
All Circuits Operating
40
35
–12
12
10
V
30
–6
4
–4
2
–2
0.5
1.0
VSD (V)
1.5
0
0.0
PT (W)
0V
0V
–1
S=
6
0
0.0
25
–8
–4
V
0V
8
VG
VG
IDR (A)
S=
–10
4V
10
IDR (A)
Capacitance (pF)
Coss
100
s
Ciss
m
1000
10
ED
Ciss
1000
W
20
ith
In
fin
ite
15
He
at
sin
k
10
5 Without Heatsink
–0.5
–1.0
VSD (V)
–1.5
0
0
50
100
150
Ta (°C)
141
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