ETC US2882

US2881/2882
CMOS High Sensitivity Latch
Features and Benefits
•
•
•
•
•
•
Chopper stabilized amplifier stage
Optimized for BDC motor applications
New miniature package / thin, high reliability package
Operation down to 3.5V
CMOS for optimum stability, quality, and cost
Ultra low IDD current
Applications
•
•
•
•
•
•
Solid state switch
Brushless DC motor commutation
Speed sensing
Linear position sensing
Angular position sensing
Current sensing
Ordering Information
Part No.
US2881 / US2882
US2881 / US2882
Temperature Suffix
Package
Temperature Range
E
SO or UA
-40oC to 85oC Extended
L
SO or UA
-40oC to 150oC Full Temp.
*Contact Factory or Sales Representative for Legacy Temperature Versions
Functional Diagram
V DD
Description
The design specifications and performance of the
Melexis US2881 have been optimized for commutation applications in brushless DC motors and
automotive speed sensing.
Output
The output transistor will be latched on (BOP) in the
presence of a sufficiently strong South pole magnetic field facing the marked side of the package.
Similarly, the output will be latched off (BRP) in the
presence of a North field. The SOT-23 device is
reversed from the UA package. The SOT-23 output
transistor will be latched on (BOP) in the presence
of a sufficiently strong North pole magnetic field
subjected to the marked face.
Voltage
Regulator
Chopper
GND
UA Package
Pin 1 - V D D
Pin 2 - GND
Pin 3 - Output
SO Package
Pin 1 - VD D
Pin 2 - Output
Pin 3 - GND
Note: Static sensitive device; please observe ESD precautions. Re verse VDD protection is not included. For reverse voltage protection,
a 100Ω resistor in series with VDD is recommended.
US2881 CMOS High Sensitivity Latch
3901002881 Rev 5.6
23/July/00
Page 1
US2881/2882
CMOS High Sensitivity Latch
US2881 and US2882 Electrical Specifications
DC operating parameters: TA = 25oC, VDD = 12VDC (unless otherwise specified).
Parameter
Symbol Test Conditions
Min
Supply Voltage
VDD
Operating
3.5
Supply Current
IDD
B<BOP
1.5
Saturation Voltage
VDS(on)
Output Leakage
Typ
Max
Units
27
V
2.0
4.0
mA
IOUT = 20 mA, B>BOP
0.4
0.5
V
IOFF
B<BRP, VOUT = 27V
0.01
5.0
ìA
Output Rise Time
tr
VDD = 12V, RL = 1.1KÙ, CL = 20pf
0.04
ìs
Output Fall Time
tf
VDD = 12V, RL = 1.1KÙ, CL = 20pf
0.18
ìs
US2881 Magnetic Specifications
Parameter
Operating Point
Symbol Test Conditions
BOP
Min
0.5
Typ
2.0
Max
4.5
Units
mT
Release Point
BRP
-4.5
-2.0
-0.5
mT
Hysteresis
Bhys
3.0
4.0
5.0
mT
US2882 Magnetic Specifications
Parameter
Symbol Test Conditions
Min
Typ
Max
Units
Operating Point
BOP
-2.0
2.0
6.0
mT
Release Point
BRP
-6.0
-2.0
2.0
mT
Hysteresis
Bhys
3.0
4.0
5.0
mT
Note: 1 mT = 10 Gauss.
Absolute Maximum Ratings
Supply Voltage (Operating), VDD
Supply Current (Fault), IDD
Output Voltage, VOUT
Output Current (Fault), IOUT
Power Dissipation, PD
Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function or design.
Melexis does not assume any liability arising from the use of any
product or application of any product or circuit described herein.
US2881 CMOS High Sensitivity Latch
24V
50mA
24V
50mA
100mW
Operating Temperature Range, T A
-40 to 150°C
Storage Temperature Range, T S
-65 to 150°C
Maximum Junction Temp, TJ
175°C
ESD Sensitivity (All Pins)
+/- 4KV
3901002881 Rev 5.6
23/July/00
Page 2
US2881/2882
CMOS High Sensitivity Latch
Performance Graphs
Typical Magnetic Switch Points
versus
Supply Voltage
Typical Magnetic Switch Points
versus
Temperature
2881
12.5
2881
12
BHYS
7.5
7.5
Flux Density (mT)
Flux Density (mT)
B OP
2.5
-2.5
B OP
2.5
-2.5
B RP
BRP
-7.5
-7.5
-12.5
-12.5
0
5
10
15
20
25
30
-40
0
40
160
200
Temperature ( C)
Min/Max Magnetic Switch
Range
versus
Temperature
Output Voltage
versus
Flux Density
2881
2881
30
B OP Max
VDD
24
7.5
BOP
2.5
Output Voltage (V)
Flux Density (mT)
120
o
Supply Voltage (V)
12.5
80
B OP Min
-2.5
B RP Max
-7.5
B RP Min
18
12
6
BRP
Vout
-12.5
-40
0
0
40
80
120
160
200
-30
-10
0
10
20
30
Flux Density (mT)
Temperature (oC)
US2881 CMOS High Sensitivity Latch
-20
3901002881 Rev 5.6
23/July/00
Page 3
US2881/2882
CMOS High Sensitivity Latch
Performance Graphs
Typical Saturation Voltage
versus
Temperature
VDD = 12 V, IOUT = 20mA
Typical Supply Current
versus
Supply Voltage
2881
5
4
400
TA = -40oC
VDS(ON) (mV)
Supply Current (mA)
2881
500
3
TA = 25oC
2
300
V DS(ON)
200
TA = 125oC
1
100
0
0
0
5
10
15
20
25
30
-40
0
Power Dissipation
versus
Temperature
120
160
200
All Devices
280
400
260
UA Package
Rθ JA =206oC/W
Solder Temperature (oC)
Package Power Dissipation (mW)
80
Wave Soldering Parameters
All Devices
500
40
Temperature (oC)
Supply Voltage (V)
300
200
100
240
220
200
SO Package
RθJA =575oC/W
0
-40
0
40
80
120
160
200
0
Temperature (oC)
US2881 CMOS High Sensitivity Latch
5
10
15
20
25
30
Time in Wave Solder (Seconds)
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23/July/00
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US2881/2882
CMOS High Sensitivity Latch
Application Comments
Unique Features
CMOS Hall IC Technology
The Chopper Stabilized Amplifier, using
switched capacitor techniques, eliminates the
amplifier offset voltage, which in bipolar devices
is a major source of temperature sensitive drift.
CMOS makes this advanced technique possible.
If reverse supply protection is desired, use a resistor in series with the VDD pin. The resistor will
limit the Supply Current (Fault), IDD, to 50mA.
For severe EMC conditions, use the application
circuit below.
The CMOS chip is also much smaller than the
Bipolar chip, allowing very sophisticated circuitry to be placed in less space. The small chip
size also contributes to lower physical stress
and less power consumption.
Installation
Consider temperature coefficients of Hall IC and
magnetics, as well as air gap and life time variations. Observe temperature limits during wave
soldering.
Applications Examples
Automotive and Severe
Environment Protection Circuit
Two Wire Optional Current
Biasing Circuit
R1 100Ω
V
VDD
Supply
Voltage
R
1.2L
K
Z1
C1
4.7n
F
RL
IIN
Iout
IDD
D1
DD
Hall IC
OUT
VSS
C2
4.7n
F
Hall
IC
Rb
The resistors Rb and RL can be used to bias the input current, Iin. Refer
to the part specification for limiting values. This circuit will help in getting
the precise ON and OFF currents desired.
B RP = Ioff = (VDD / Rb + DD
I )
B OP = Ion = (Ioff + VDD / RL )
US2881 CMOS High Sensitivity Latch
3901002881 Rev 5.6
23/July/00
Page 5
US2881/2882
CMOS High Sensitivity Latch
Physical Characteristics
UA Package Dimensions
45o
Typical
1.60
1.40
2.13
1.87
4.30
3.90
0.84
0.63
UA Hall Plate / Chip Location
0.45
0.41
5o
Typical
2.64
2.34
1.53
1.27
U28 *
105
3.20
2.80
0.48
0.43
45o
Typical
Marked
Surface
1.75
1.55
All Dimensions in millimeters
0.38
Typical
(see note 3)
0.20
0.00
0.41
0.35
1
2
NOTES:
1.) Controlling dimension: mm
2.) Leads must be free of flash and
plating voids
3.) Leads must not arc toward
the rear of package
4.) Package dimensions exclude
molding flash
5.) Tolerance is 0.254mm unless
otherwise specified
3
= Supplier (Melexis)
= Series (2880)
Line 2:
1st digit (1)
2nd and 3rd digits(05)
= Year (2001)
= Week of Year
PINOUT:
Pin 1
Pin 2
Pin 3
1.30
1.24
0.50
0.35
0.20
MIN
3
*
2104
1
V DD
GND
Output
0.41
0.35
2.57
2.51
SOT-23 Package Dimensions
(Top View)
3.00
2.60
15.5
14.5
* MARKING:
Line 1:
1st digit (U)
2nd and 3rd digits (28)
1.80
1.50
chip
0.66
0.56
2
2.10
1.70
0.25
0.10
Pin #
3.10
2.70
0.10
0.00
0.90
0.70
1.30
1.00
NOTES:
1. MARKING:
1st Digit (2)
= Series (2881)
2nd Digit(1)
= Year - 2001
Last Digits (04) = Week of Year
2. PINOUT (See Top View at left):
Pin 1
VDD
Pin 2
Output
Pin 3
GND
3. Controlling dimension: mm.
SOT-23 Hall Plate /
Chip Location
(Bottom View)
0.95
0.85
4. Lead thickness after solder plating will be 0.254
mm maximum.
5. Package dimensions exclude molding flash.
6. The end flash shall not exceed 0.127 mm on each
side of package.
7. Tolerance is +/- 0.254 mm unless otherwise
specified.
1.55
1.45
For the latest version of this document,
Go to our website at:
WWW.melexis.com
Or for additional information
Contact Melexis Direct:
Europe and Japan
E-mail: [email protected]
Phone: 011-32-13-670-780
US2881 CMOS High Sensitivity Latch
USA and rest of the world
E-mail: [email protected]
Phone: (603)-223-2362
3901002881 Rev 5.6
23/July/00
Page 6
US2881/2882
CMOS High Sensitivity Latch
Revision History.
Note: This page is intended to record changes, but not to be printed for distribution or conversion to a pdf.
Revision Date By
5.5
9/28/00 rsa
Change
On Page 2, changed units of measure for output rise / fall times from “ms” to “ì s.”
US2881 CMOS High Sensitivity Latch
3901002881 Rev 5.6
23/July/00
Page 7