VS133-R512 PDRB-28998-X045-01 DATA SHEET Memory Module Part Number VS133-R512 Buffalo Technology (1/7) VS133-R512 PDRB-28998-X045-01 1. Description 168pin Registered DIMM PC133/CL=3 2. Module Specification Item Capacity Physical Bank(s) Module Organization Module Type Speed Grade Interface Power Supply Voltage Burst Lengths DRAM Organization PCB Part No. Contact Tab Serial PD Specification 512MByte 2 64M x 72bit ECC Registered PC133/CL=3 PC100/CL=2 LVTTL 3.3V±0.3V 1,2,4,8,Full 32M x 8bit SDR SDRAM ZEY8RWF-A 168pin GOLD Flash Plating Ni : min 2.00µm / Au : min 0.05µm Support 3. Mechanical Design and Module Pinout Item Mechanical Design and Pinout Reference standard Mechanical Design and Pinout SDR 168Pin DIMM (PDRB-28998-X059-01) Y(PCB Height) Z1 Z2 : 43.18 mm : Undefined : 4.52 mm MAX(Double Sided) 4. Block Diagram Item Block Diagram Reference standard Block Diagram PC133/PC100 Registered DIMM(x8bitDRAM 2Bank) (PDRB-28998-X090-01) Buffalo Technology (2/7) VS133-R512 PDRB-28998-X045-01 5. Electrical Specifications 5.1 Absolute Maximum Ratings Parameter Symbol Voltage Any Pin Relative to Vss Supply Voltage Relative to Vss Power Dissipation Short Circuit Output Current VT VCC PD IO Value -0.3~Vcc+0.3 (max 4.6) -0.3~4.6 22 50 Unit V V W mA 5.2 Recommended Operating Conditions Parameter Symbol MIN MAX Unit VCC VIH VIL TA 3.0 2.0 -0.3 0 3.6 Vcc+0.3 0.8 70 V V V °C Supply Voltage High Level Input Voltage Low Level Input Voltage Operating Ambient Temperature 5.3 Pin Capacitance CK2 CK3 CICK4 Maximum Pin Capacitance 18 12 12 12 S0 S1 S2 S3 CIS1 CIS2 CIS3 CIS4 9.0 9.0 9.0 9.0 pF pF pF pF CKE0 CKE1 CICKE1 CICKE2 18 —— pF pF DQM Input Pin Capacitance DQMB0~7 CIDQM1 9.0 pF DQ Input / Output Pin Capacitance DQ0~DQ63 CB0~7 COUT1 COUT2 13 13 pF pF A,BA,/RAS,/CAS,/WE CIN 18 pF Parameter CK Input Pin Capacitance /S Input Pin Capacitance CKE Input Pin Capacitance Other Input Pin Capacitance Symbol CK0 CK1 CICK1 CICK2 CICK3 Unit pF pF pF pF Buffalo Technology (3/7) VS133-R512 PDRB-28998-X045-01 5.4 D.C. Characters Parameter Symbol Operating current Value Unit ICC1 MAX 2749 * mA ICC2P MAX 805 * mA ICC2PS MAX 805 * mA ICC2N MAX 1399 * mA ICC2NS MAX 1039 * mA ICC3P MAX 949 * mA ICC3PS MAX 877 * mA ICC3N MAX 1849 * mA ICC3NS MAX 1309 * mA Operating current (Burst mode) ICC4 MAX 2749 * mA Auto refresh current Self refresh current ICC5 ICC6 Input leakage current IIL MAX 6529 * mA MAX 823 * mA MIN -10 * µA Output High Voltage Output Low Voltage VOH VOL Precharge Standby current in power down mode Precharge Standby current in non power down mode Active standby current in power down mode Active standby current in non power down mode MAX 10 * µA MIN MAX 2.4 0.4 * * V V Test Condition Burst length=1, tRC ≥ tRC (min), IO=0mA, One bank active CKE ≤ VIL(max), tCK = 12ns CKE ≤ VIL(max), tCK = ∞ CKE, /S ≥ VIH(min), tCK = 12ns CKE ≥ VIH (min), tCK = ∞ CKE ≤ VIL(max), tCK = 12ns CKE ≤ VIL(max), tCK = ∞ CKE, /S ≥ VIH(min), tCK = 12ns CKE ≥ VIH (min), tCK = ∞ tCK ≥ tCK (min) Io=0mA, One bank active tRC ≥ tRC (min) CKE ≤ 0.2V All other pins are not under test=0V 0V ≤ VIN ≤ VCC IOH = -2mA IOL = 2mA * : No guarantee against this value. 5.5 A.C. Timing Characters Parameter Symbol MIN MAX 10 7.5 2.5 2.5 1.5 0.8 1000 1000 —— —— —— —— —— —— 2.7 20 45 20 15 67.5 —— 15 6 5.4 —— —— 100,000 —— —— —— 7.8 —— Unit Clock Period /CAS Latency = 2 /CAS Latency = 3 Clock High Pulse Width Clock Low Pulse Width Input Setup Time Input Hold Time Output Valid From Clock tCH tCL tSI tHI /CAS Latency = 2 /CAS Latency = 3 Output Hold From Clock /RAS to /CAS Delay /RAS Active Time /RAS Precharge Time Act to Act Command Period Row Cycle Time Average Periodic Refresh Interval Mode Register cycle time tCLK tAC tOH tRCD tRAS tRP tRRD tRC tREF tMRC ns ns ns ns ns ns ns ns ns ns ns ns µs ns Buffalo Technology (4/7) VS133-R512 PDRB-28998-X045-01 6. Serial Presence Detect (SPD) Data Structure Byte No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Hex Value Function Function Supported 80 08 04 0D 0A 02 48 00 01 75 54 02 82 08 08 LVTTL 7.5ns (CL=3) 5.4ns (CL =3) ECC 7.8µs x8bit x8bit 01 1CLK 16 17 18 19 20 21 Defines # of bytes written into serial memory at module manufacturer Total # of bytes of SPD memory device Fundamental memory type (FPM, EDO, SDRAM..) # of row addresses on this assembly # Column Addresses on this assembly # Module Banks on this assembly Data Width of this assembly ... Data Width continuation Voltage interface standard of this assembly SDRAM Cycle time (highest CAS latency) SDRAM Access from Clock (highest CAS latency) DIMM Configuration type (non-parity, ECC) Refresh Rate/Type Primary SDRAM Width Error Checking SDRAM width Minimum Clock Delay Back to Back Random Column Address Burst Lengths Supported # of Banks on Each SDRAM Device CAS# Latency CS# Latency Write Latency SDRAM Module Attributes 8F 04 06 01 01 1F 22 SDRAM Device Attributes: General 0E SDRAM Cycle time (2nd highest CAS latency) SDRAM Access from Clock (2nd highest CAS latency) SDRAM Cycle time (3rd highest CAS latency) SDRAM Access from Clock (3rd highest CAS latency) Minimum Row Precharge Time Row Activate to Row Activate Min. RAS to CAS Delay Min Minimum RAS Pulse Width Density of each bank on module Command and Address signal input setup time Command and Address signal input hold time Data signal input setup time Data signal input hold time Superset Information (may be used in future) SPD Data Revision Code Checksum for bytes 0-62 Manufacturing Location Manufacturer’s Part Number Revision Code Manufacturing Date Assembly Serial Number Manufacturer Specific Data Intel specification frequency A0 60 00 00 14 0F 14 2D 40 15 08 15 08 00 12 04 7F 83 00 01 20 00 00 00 00 64 Burst Lengths (1,2,4,8,FULL) 4Banks CAS Latency =2,3 CS Latency =0 WE Latency =0 Registered with PLL Supports Write1/Read Burst Supports Precharge All Supports Auto-Precharge 10ns (CL=2) 6ns (CL=2) Non Support Non Support 20ns 15ns 20ns 45ns 256MB 1.5ns 0.8ns 1.5ns 0.8ns Undefined Rev 1.2 Checksum Intel Specification CAS# Latency support 87 15 23 24 25 26 27 28 29 30 31 32 33 34 35 36-61 62 63 64-66 67 68-71 72 73-90 91-92 93-94 95-98 99-125 126 127 Manufacturer’s JEDEC ID code per JEP-108E 128+ Unused storage locations 00 128Bytes 256Bytes SDR SDRAM 13 10 2Banks 72bits MELCO inc. Blank Undefined Undefined Undefined Undefined 100MHz Compatible Clock=0 CL =2,3 Undefined Buffalo Technology (5/7) VS133-R512 PDRB-28998-X045-01 7. Packing/Label Specification Item Packing/Label Specification Reference standard Packing/Label Specification –for 5.25inchWidth DIMM (PDRB-28998-X062-01) Buffalo Technology (6/7) VS133-R512 PDRB-28998-X045-01 8. Revision History Rev. 01 Date Jan.24.2003 Changes ――― Issued J.Onisi Buffalo Technology (7/7)