2SA2042 Silicon PNP Epitaxial Planar Transistor V ICBO VCEO −50 V IEBO VEBO −6 V V(BR)CEO IC −10（pulse−20） A hFE IB −3 A −10max VEB＝−6V −10max µA −50min V VCE＝−2V, IC＝−1A 130∼310 VCE(sat) IC＝−5A, IB＝−0.1A −0.5max VCE＝−12V, IE＝0.5A 60typ VCB＝−10V, f＝1MHz 375typ 30(Tc＝25°C) W fT Tj 150 °C COB −55 to ＋150 °C V pF 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b MHz 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) 2.4±0.2 2.2±0.2 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –20 4 –5 –10 5 –100 100 0.2typ 0.7typ 0.1typ 38 10.1±0.2 µA IC＝−25mA PC Tstg VCB＝−50V 4.0±0.2 −50 External Dimensions FM20(TO220F) Unit 0.8±0.2 VCBO (Ta=25°C) Ratings Conditions ±0.2 Symbol 3.9 ■Electrical Characteristics Unit 8.4±0.2 (Ta=25°C) Ratings 16.9±0.3 Symbol 13.0min ■Absolute maximum ratings Application : Audio and General Purpose B C E Weight : Approx 6.5g a. Part No. b. Lot No.