CQY80X, CQY80NX CQY80, CQY80N OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l CQY80X is VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l 7.0 6.0 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Custom electrical selections available APPLICATIONS l DC motor controllers l Industrial systems controllers l Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 1 2 6 5 3 4 1.2 7.62 6.62 CQY80NX - VDE 0884 pending CQY80X is certified to EN60950 by the following Test Bodies :- Nemko - Certificate No. P96101299 Fimko - Registration No. 190469-01..22 Semko - Reference No. 9620076 01 Demko - Reference No. 305567 CQY80NX - EN60950 pending DESCRIPTION The CQY80 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. Dimensions in mm 2.54 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation 32V 70V 6V 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB90035m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 1.2 1.60 10 Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 32 IC / IF (CTR) (Note 2) 0.5 Current Transfer Ratio (CTR) (Note 2) 50 6 200 0.3 5300 7500 Input-output Isolation Resistance RISO 5x1010 IF = 50mA IR = 10µA VR = 6V V IC = 1mA V nA IE = 100µA VCE = 20V % 10mA IF , 5V VCE V 10mA IF , 1mA IC VRMS VPK See note 1 See note 1 Ω VIO = 500V (note 1) Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. Type RL = 100Ω see fig 1 td tr ton ts µs µs µs µs tf µs toff µs IC mA RL = 1kΩ see fig 2 ton toff IF µs µs mA 4.0 6.7 7.0 5 25.0 CQY80 CQY80N 7.0 11.0 0.3 VCC = 5V 42.5 10 VCC = 5V Output Output 50Ω 50Ω RL = 100Ω Figure 1 7/12/00 V V µA 10mA IF , 5V VCE Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO TEST CONDITION RL = 1kΩ Figure 2 DB90035m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage TA = 25°C 50 Collector current I C (mA) Collector power dissipation P C (mW) 200 150 100 50 40 50 30 30 20 15 20 10 10 IF = 5mA 0 0 -30 0 25 50 75 100 0 125 Forward Current vs. Ambient Temperature 70 280 Current transfer ratio CTR (%) 320 60 50 40 30 20 0 8 10 VCE = 5V TA = 25°C 240 200 160 120 80 40 0 -30 0 25 50 75 100 1 125 2 5 Ambient temperature TA ( °C ) 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 20 50 Collector-emitter Saturation Voltage vs. Ambient Temperature (V) CE(SAT) IF = 10mA VCE = 5V 100 Collector-emitter saturation voltage V 1.5 10 Forward current IF (mA) Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio 6 Current Transfer Ratio vs. Forward Current 80 10 7/12/00 4 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( °C ) Forward current I F (mA) 2 0.28 0.24 IF = 10mA IC = 1mA 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB90035m-AAS/A1