ASG304 DC-2000 MHz SiGe HBT Amplifier Features Description ·SiGe Technology ·18 dB Gain at 900 MHz ·+24 dBm P1dB ·+41 dBm Output IP3 ·2.6 dB Noise Figure ·MTTF > 100 Years ·Single +6 V Supply ·SOT-89 Surface Mount Package The ASG304 is designed for high linearity, high gain, and low noise over a wide range of frequency, being suitable for use in both receiver and transmitter of wireless and wireline telecommunication systems. The product is manufactured using a state-of-the-art SiGe HBT process of the company's own, making it cost-effective and highly reliable. The amplifiers are available in a low cost SOT-89 package completing stringent DC and RF tests. Applications Specifications 1) Parameters Units Frequency Range dB 2) Output VSWR Output IP3 Min. Typ. MHz Gain Input VSWR 2) 3) 17.5 1.2 - 1.7 39 41 ·CDMA, GSM, W-CDMA, PCS ·PA Driver Amplifier ·Gain Block 18 ·CATV Amplifier ·IF Amplifier 45 Noise Figure dB 2.6 Output P1dB dBm 24 Supply Current mA 110 Supply Voltage V 6 °C/W 32 4) Max. 250 - 2000 dBm Thermal Resistance, Rth Package Style: SOT-89 More Information 1) Measurement conditions are as follows: T = 25°C, VCC = 6 V, Freq. = 900 MHz, 50 ohm system. 2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 3) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. 4) The thermal resistance was determined at a DC power of 0.834 W (VCC=6 V, IC=139 mA) with RF signal and a lead temperature of 85.2 °C. Tel: (82) 42-528-7220 Fax: (82) 42-528-7222 th ASB, Inc., 4 FI. Venture Town Bldg., 367-17 Goijeong-Dong, Seo-Gu, Daejon 302-716, Korea Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to + 85°C Storage Temperature -40 to + 150°C Supply Voltage 8V Operating Junction Temperature Input RF Power (continuous) Remarks 1) 150°C +3 dB above Input P1dB 1) 1) Contact us for detailed information about a higher input power operation. Application Notes Application Circuit for 950 MHz (GSM) Application Circuit for 1750 MHz Application Circuit for 2250-2750 MHz Application Circuit for 900 MHz (5 V) Ordering Information Part Number EB-ASG304-900 Description High linearity medium power amplifier (Available in tape and reel) Fully assembled evaluation kit (900 MHz) EB-ASG304-2000 Fully assembled evaluation kit (2000 MHz) EB-ASG304-1750 Fully assembled evaluation kit (1750 MHz) ASG304 EB-ASG304-IF Fully assembled evaluation kit (10-200 MHz) EB-ASG304-CATV Fully assembled evaluation kit (50-860 MHz) 1/8 www.ASB.co.kr June 2003 ASG304 Outline Drawing (Unit: mm) 3 a 2 2 1 Pin Description Function Pin No. Input 1 Ground 2 Output 3 Land Pattern Mounting Configuration (Unit: mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of lead pin 2 for better RF and thermal performance, as shown in the drawing at the left side. 2/8 www.ASB.co.kr June 2003 ASG304 Application Circuit: 900 MHz Schematic Typical Performance Frequency 900 MHz Magnitude S21 18 dB Magnitude S11 1) -24 dB Magnitude S22 1) -11 dB R1=7.5 kΩ Output P1dB 24 dBm 2) 41 dBm Output IP3 C4= C5= C6= 100 pF 1000 pF 0.1µF Vcc=6 V L1=100 nH C1=10 pF 50 Ω RF IN ASG304 Noise Figure 2.6 dB Supply Voltage 6V Current 110 mA RF OUT C3=100 pF 3 mm C2=8 pF 1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Gain vs. Temperature 20 Gain (dB) 19 18 Frequency=900 MHz 17 -1 5 -2 0 -2 5 S12 [dB] 16 -60 -3 0 o 85 C o 25 C -3 5 o -40 C -40 -20 0 20 40 60 80 -4 0 6 00 100 7 00 80 0 90 0 100 0 11 00 1 200 Frequenc y [MHz ] o Temperature ( C) S-parameters 10 -15 0 -20 -25 S12 (dB) S11 (dB) -10 -20 o 85 C o 25 C o -40 C -30 700 800 900 1000 1100 o 85 C o 25 C o -40 C -35 -40 -50 600 -30 -40 600 1200 700 800 25 5 20 0 15 -5 10 o 85 C o 25 C o -40 C 5 0 600 700 800 900 1000 Frequency (MHz) 3/8 900 1000 1100 1200 Frequency (MHz) S22 (dB) S21 (dB) Frequency (MHz) 1100 -10 o 85 C o 25 C o -40 C -15 1200 -20 600 700 800 900 1000 1100 Frequency (MHz) www.ASB.co.kr June 2003 1200 ASG304 P1dB vs. Frequency Output IP3 vs. Frequency (Pout per tone = 8 dBm) 60 30 o o 85 C o 25 C o -40 C 50 Output IP3 (dBm) P1dB (dBm) 28 85 C o 25 C o -40 C 55 26 24 45 40 35 30 22 25 20 800 825 850 875 900 925 20 800 950 825 850 950 IS-95, 9 Channels Forward -25 o 50 Adjacent Channel Power (dBc) 85 C o 25 C o -40 C 55 Output IP3 (dBm) 925 -20 60 45 40 35 30 25 9 10 11 12 13 14 15 16 o 85 C o 25 C o -40 C -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 8 Pout per tone (dBm) 4/8 900 880 MHz Adjacent Channel Power vs. Channel Output Power Output IP3 vs. Tone Power (Frequency = 900 MHz) 20 875 Frequency (MHz) Frequency (MHz) 4 6 8 10 12 14 16 18 Channel Output Power (dBm) www.ASB.co.kr June 2003 20 ASG304 Application Circuit: 2000 MHz Typical Performance Schematic Frequency 2000 MHz Magnitude S21 10.5 dB Magnitude S11 1) -20 dB Magnitude S22 1) -15 dB Output P1dB 24 dBm 2) 40 dBm Output IP3 Noise Figure 3.5 dB Supply Voltage 6V Current 110 mA C4= 100 pF Vcc=6 V R1=7.5 kΩ C5= 1000 pF C6= 0.1 µF L1=56 nH C1=10 pF RF IN ASG304 L2=3.3 nH 8.75 mm C2=2.7 pF 5 mm RF OUT 50 Ω C3=5 pF GND 1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) and inductor (L2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Gain vs. Temperature 14 Gain (dB) 13 12 11 Frequency=2 GHz 10 -60 -40 -20 0 20 40 60 80 100 o Temperature ( C) S-parameters -10 20 o 85 C o 25 C o -40 C -15 S12 (dB) S11 (dB) 0 o -20 -20 -25 -40 -60 1800 85 C o 25 C o -40 C 1900 2000 2100 -30 1800 2200 1900 2000 2100 10 20 o o 85 C o 25 C o -40 C 10 -10 -20 5 1900 2000 Frequency (MHz) 5/8 85 C o 25 C o -40 C 0 S22 (dB) S21 (dB) 15 0 1800 2200 Frequency (MHz) Frequency (MHz) 2100 2200 -30 1800 1900 2000 2100 2200 Frequency (MHz) www.ASB.co.kr June 2003 ASG304 Output IP3 vs. Frequency (Pout per tone = 8 dBm) P1dB vs. Frequency 60 30 o 85 C o 25 C o -40 C 55 50 Output IP3 (dBm) 28 P1dB (dBm) o 85 C o 25 C o -40 C 26 24 45 40 35 30 22 25 20 1800 1900 2000 20 1800 2100 1900 IS-95, 9 Channels Forward -20 60 o -25 50 Adjacent Channel Power (dBc) 85 C o 25 C o -40 C 55 Output IP3 (dBm) 2100 1960 MHz Adjacent Channel Power vs. Channel Output Power Output IP3 vs. Tone Power (Frequency = 2 GHz) 45 40 35 30 25 20 2000 Frequency (MHz) Frequency (MHz) -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 8 10 12 Pout per tone (dBm) 6/8 14 16 o 85 C o 25 C o -40 C -30 4 6 8 10 12 14 16 18 Channel Output Power (dBm) www.ASB.co.kr June 2003 20 ASG304 Application Circuit: 50-860 MHz for CATV Typical Performance * Zo=50 Ω , Vcc=6 V, Ic=120 mA Parameters Frequency (MHz) Units 50 250 450 650 850 Gain dB 13.3 13.4 13.2 13.6 13.1 Output P1dB dBm 22 23 22.4 22 21.5 S11 dB -8.1 -8.2 -9.1 -12 -15.8 S22 dB -8.4 -9.5 -9.2 -8.8 -10.1 S12 dB -43 -41 -37 -33 -30 Noise Figure dB 5.2 5.4 5.9 5.9 5.6 OIP3 dBm 36 38 37 33 35 OIP2 dBm 49 52 53 63 70 Board Layout (FR4, 40x40 mm2, 0.8T) Schematic C5= C6= C7= 100 pF 1000 pF 0.1 µF Vcc=6 V R1=7.5 kΩ L2=100 nH R4=270 Ω R2=20 Ω L1=39 nH C4=1000 pF R3=20 Ω ASG304 RF IN RF OUT C3=1000 pF C1=1000 pF C2=3.3 pF 0 20 -5 15 S11 S21 (dB) S11 and S22 (dB) S-parameters -10 -15 10 5 S22 -20 0 200 400 600 Frequency (MHz) 7/8 800 1000 0 0 200 400 600 800 1000 Frequency (MHz) www.ASB.co.kr June 2003 ASG304 OIP vs. Frequency Noise Figure vs. Frequency 80 10 OIP2 70 OIP2 and OIP3 (dBm) 8 Noise Figure (dB) 60 50 40 6 4 30 OIP3 2 20 10 0 200 400 600 800 0 1000 0 200 400 Frequency (MHz) 600 800 1000 Frequency (MHz) Application Circuit: 10-200 MHz for IF Typical Performance Schematic Frequency (MHz) 100 100 Magnitude S21 (dB) 19.6 19.7 Magnitude S11 (dB) -13.5 -13.5 Magnitude S22 (dB) -11.0 -11.0 Output P1dB (dBm) 22.0 22.8 Output IP3 1) 37 36 Noise Figure (dB) (dBm) 5.6 5.6 Supply Voltage (V) 5 Current (mA) 6 113 C4= 100 pF Vcc=5 V RBIAS=6.2 kΩ C5= 1000 pF C6= 0.1 µF L1=560 nH C2=100 pF R2=750 Ω R1=30 Ω R3=20 Ω RF IN 2) RF OUT C1=68 nF 114 ASG304 C3=68 nF 1) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. 2) For 6 V operation, RBias should be replaced with 7.5 kohm. Board Layout (FR4, 40x40 mm2, 0.8T) S-parameters 40 30 Gain (dB) Gain 20 10 0 0 50 100 150 200 Frequency (MHz) 0 S11 S22 S11 and S22 (dB) -5 -10 -15 -20 0 50 100 150 200 Frequency (MHz) 8/8 www.ASB.co.kr June 2003