ELM7Sxx,ELM7SxxB SERIES CMOS LOGIC IC ■ GENERAL DESCRIPTION ・ELM7Sxx,ELM7SxxB Series are CMOS ICs. They realize a high speed operation similar to LS-TTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output. ・ELM7S66,ELM7S66B are CMOS analog switches. They realize a high speed operation with a low power consumption by CMOS features. With a low on resistance and a high transmission rate, they realize a wider input voltage range. ■ FEATURES ・ Very small SOT-25 (2.9×1.6×1.1mm) 5 - pin package SOT-26 (2.9×1.6×1.1mm) 6 - pin package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・| IOH | = IOL = 2mA (min) ■ SERIES Function NAND AND NOR VCC VCC OR VCC VCC Diagram (TOP VIEW) GND GND ELM7S00 ELM7S00B Product Function GND ELM7S08 ELM7S08B INV ELM7S02 ELM7S02B UNB. INV VCC ELM7S32 ELM7S32B UNB. INV×2 EX OR VCC VCC VCC Diagram (TOP VIEW) GND GND GND GND Product ELM7S04 ELM7S04B Function ANALOG SW ELM7SU04 ELM7SU04B SMT. INV VCC VCC Diagram (TOP VIEW) GND Product GND GND ELM7S66 ELM7S66B ELM7S14 ELM7S14B 13 ELM7SU04W ELM7SU04BW ELM7S86 ELM7S86B ELM7Sxx,ELM7SxxB SERIES CMOS LOGIC ■ SELECTION GUIDE Symbol a,b 00 08 02 32 Function 04 U04 86 66 14 NAND AND NOR OR INV UNB.INV EX OR Analog SW SMT. INV E L M 7 S x x : Sn/Pb ↑↑ a b E L M 7 S x x B : Pb-Free ↑↑ a b 14 ELM7S00,ELM7S00B 2-input NAND Gate ■ DESCRIPTION ELM7S00,ELM7S00B are CMOS 2-input NAND gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・| IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 1 4 2 3 Pin No. 1 2 3 4 5 Pin Name INB INA GND OUTX VCC Input INA INB Low Low Low High High Low High High Output OUTX High High High Low ■ MARKING SOT-25 ① ② ③ No. ① ② ③ Ma rk E 1 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S00, ELM7S00B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 15 Units V V V mA mA mA mA mW ℃ CMOS LOGIC IC ELM7S00,ELM7S00B 2-input NAND Gate ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. Symbol VCC VIN VOUT Top High-input down-time tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Input Voltage Output Voltage Input Current Static Current Sym. VCC 2.0 VIH 4.5 6.0 2.0 VIL 4.5 6.0 2.0 4.5 VOH 6.0 4.5 6.0 2.0 4.5 VOL 6.0 4.5 6.0 IIN 6.0 ICC 6.0 Top = 25℃ Top = -40∼+85℃ Min. Typ. Ma x. Min. Ma x. Units Conditions 1.5 1.5 3.15 3.15 V 4.2 4.2 0.5 0.5 1.35 1.35 V 1.8 1.8 1.9 2.0 1.9 VIN= 4.4 4.5 4.4 VIH IOH = -20μA 5.9 6.0 5.9 V or 4.18 4.36 4.13 VIL IOH = -2mA 5.68 5.84 5.63 IOH = -2.6mA 0.0 0.1 0.1 VIN= 0.0 0.1 0.1 VIH IOL = 20μA 0.0 0.1 0.1 V 0.11 0.26 0.33 IOL = 2mA 0.13 0.26 0.33 IOL = 2.6mA -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND 1.0 10.0 μA VIN = VCC or GND ■AC ELECTRICAL CHARACTERISTICS ( CL=15pF, tr=tf=6ns,VCC=5V ) Parameter Sym. High Output tTLH Down-time tTHL Propagation tPLH Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 3 10 5 15 ns 5 15 Conditions Refer to following test circuit Refer to following test circuit 16 CMOS LOGIC IC ELM7S00,ELM7S00B 2-input NAND Gate Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 18 125 155 tTLH 4.5 7 25 31 ns 6.0 6 21 26 Refer to test circuit 2.0 14 125 155 tTHL 4.5 6 25 31 ns 6.0 6 21 26 2.0 16 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Refer to test circuit 2.0 16 100 125 tPHL 4.5 6 20 25 ns 6.0 5 17 21 CIN 5 10 10 pF CPD 10 pF * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC C C V ■ TEST CIRCUIT T U P T U O T U P N I r o t a l ei l s c l s u PO L C 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns 90% INPUT VCC 90% 50% 50% 10% 10% GND tTHL OUTPUT tTLH 90% 90% VOH 50% 50% 10% 10% VOL tPHL tPLH 17 ELM7S08,ELM7S08B 2-input AND Gate ■ DESCRIPTION ELM7S08,ELM7S08B are CMOS 2-input AND gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・| IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 1 4 2 3 Pin No. 1 2 3 4 5 Pin Name INB INA GND OUTX VCC Input INA INB Low Low Low High High Low High High Output OUTX Low Low Low High ■ MARKING SOT-25 ① ② ③ No. ① ② ③ Mark E 2 A∼M (excepted I) Contents ELM7Sxx, ELM7Sxx series ELM7S08, ELM7S08B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 18 Units V V V mA mA mA mA mW ℃ CMOS LOGIC IC ELM7S08,ELM7S08B 2-input AND Gate ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. Symbol VCC VIN VOUT Top High-input down-time tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Input Voltage Output Voltage Input Current Static Current Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIH IOH = -20μA VOH 6.0 5.9 6.0 5.9 V 4.5 4.18 4.36 4.13 IOH = -2mA 6.0 5.68 5.83 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20μA VOL 6.0 0.0 0.1 0.1 V or 4.5 0.12 0.26 0.33 VIL IOL = 2mA 6.0 0.13 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND ■AC ELECTRICAL CHARACTERISTICS ( CL=15pF, tr=tf=6ns,VCC=5V ) Parameter Sym. High Output tTLH Down-time tTHL Propagation tPLH Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 3 10 4 15 ns 5 15 Conditions Refer to following test circuit Refer to following test circuit 19 CMOS LOGIC IC ELM7S08,ELM7S08B 2-input AND Gate ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 21 125 155 tTLH 4.5 7 25 31 ns 6.0 6 21 26 Refer to test circuit 2.0 18 125 155 tTHL 4.5 6 25 31 ns 6.0 6 21 26 2.0 16 100 125 tPLH 4.5 6 20 25 ns 6.0 5 17 21 Refer to test circuit 2.0 17 100 125 tPHL 4.5 8 20 25 ns 6.0 7 17 21 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC OUTPUT Pulse Oscillator INPUT CL 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns 90% INPUT VCC 90% 50% 50% 10% 10% tPLH 90% VOH 90% 50% OUTPUT GND tPHL 50% 10% 10% tTLH tTHL 20 VOL ELM7S02,ELM7S02B 2-input NOR Gate ■ DESCRIPTION ELM7S02,ELM7S02B are CMOS 2-input NOR gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・| IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 1 4 2 3 Pin No. 1 2 3 4 5 Pin Name INB INA GND OUTX VCC Input INA INB Low Low Low High High Low High High Output OUTX High Low Low Low ■ MARKING SOT-25 ① ② ③ No. ① ② ③ Ma rk E 3 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S02, ELM7S02B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 21 Units V V V mA mA mA mA mW ℃ CMOS LOGIC IC ELM7S02,ELM7S02B 2-input NOR Gate ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. Symbol VCC VIN VOUT Top High-input down-time tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Input Voltage Output Voltage Input Current Static Current Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIL IOH = -20μA VOH 6.0 5.9 6.0 5.9 V 4.5 4.18 4.35 4.13 IOH = -2mA 6.0 5.68 5.83 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20μA VOL 6.0 0.0 0.1 0.1 V or 4.5 0.12 0.26 0.33 VIL IOL = 2mA 6.0 0.13 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND ■AC ELECTRICAL CHARACTERISTICS Parameter Sym. High Output tTLH Down-time tTHL tPLH Propagation Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 3 10 5 15 ns 5 15 ( CL=15pF, tr=tf=6ns,VCC=5V ) Conditions Refer to following test circuit Refer to following test circuit 22 CMOS LOGIC IC ELM7S02,ELM7S02B 2-input NOR Gate ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 21 125 155 tTLH 4.5 8 25 31 ns 6.0 7 21 26 Refer to test circuit 2.0 16 125 155 tTHL 4.5 7 25 31 ns 6.0 6 21 26 2.0 19 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Refer to test circuit 2.0 17 100 125 tPHL 4.5 7 20 25 ns 6.0 6 17 21 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's Inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC INPUT Pulse Oscillator OUTPUT CL 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns 90% INPUT VCC 90% 50% 50% 10% 10% GND tTHL OUTPUT tTLH 90% 90% VOH 50% 50% 10% 10% VOL tPHL tPLH 23 ELM7S32,ELM7S32B 2-input OR Gate ■ DESCRIPTION ELM7S32,ELM7S32B are CMOS 2-input OR gate ICs. They realize a high speed operation similar to LS-TTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・| IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 1 4 2 3 Pin No. 1 2 3 4 5 Pin Name INB INA GND OUTX VCC Input INA INB Low Low Low High High Low High High Output OUTX Low High High High ■ MARKING SOT-25 ① ② ③ No. ① ② ③ Ma rk E 4 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S32, ELM7S32B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 24 Units V V V mA mA mA mA mW ℃ CMOS LOGIC IC ELM7S32,ELM7S32B 2-input OR Gate ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. Symbol VCC VIN VOUT Top High-input down-time tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Input Voltage Output Voltage Input Current Static Current Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIH IOH = -20μA VOH 6.0 5.9 6.0 5.9 V or 4.5 4.18 4.36 4.13 VIL IOH = -2mA 6.0 5.68 5.83 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIL IOL = 20μA VOL 6.0 0.0 0.1 0.1 V 4.5 0.12 0.26 0.33 IOL = 2mA 6.0 0.16 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND ■AC ELECTRICAL CHARACTERISTICS Parameter Sym. High Output tTLH Down-time tTHL Propagation tPLH Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 4 10 5 15 ns 5 15 ( CL=15pF, tr=tf=6ns,VCC=5V ) Conditions Refer to following test circuit Refer to following test circuit 25 CMOS LOGIC IC ELM7S32,ELM7S32B 2-input OR Gate ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 22 125 155 tTLH 4.5 7 25 31 ns 6.0 6 21 26 Refer to test circuit 2.0 18 125 155 tTHL 4.5 6 25 31 ns 6.0 6 21 26 2.0 17 100 125 tPLH 4.5 7 20 25 ns 6.0 6 17 21 Refer to test circuit 2.0 18 100 125 tPHL 4.5 8 20 25 ns 6.0 7 17 21 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC OUTPUT Pulse Oscillator INPUT CL 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns 90% INPUT VCC 90% 50% 50% 10% 10% tPLH 90% VOH 90% 50% OUTPUT GND tPHL 50% 10% 10% tTLH tTHL 26 VOL ELM7S04,ELM7S04B Inverter ■ DESCRIPTION ELM7S04,ELM7S04B are CMOS inverter ICs. They realizes a high speed operation similar to LS-TTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains a wider noise immunity and a constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・| IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 1 4 2 3 Pin No. 1 2 3 4 5 Pin Name NC INY GND OUTX VCC Input INA Low High Output OUTX High Low ■ MARKING SOT-25 ① ② ③ No. ① ② ③ Ma rk E 5 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S04, ELM7S04B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 27 Units V V V mA mA mA mA mW ℃ CMOS LOGIC IC ELM7S04,ELM7S04B Inverter ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. Symbol VCC VIN VOUT Top High-input down-time tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Input Voltage Output Voltage Input Current Static Current Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIL IOH = -20μA VOH 6.0 5.9 6.0 5.9 V 4.5 4.18 4.35 4.13 IOH = -2mA 6.0 5.68 5.83 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20μA VOL 6.0 0.0 0.1 0.1 V 4.5 0.12 0.26 0.33 IOL = 2mA 6.0 0.13 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND ■AC ELECTRICAL CHARACTERISTICS Parameter Sym. High Output tTLH Down-time tTHL tPLH Propagation Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 3 10 5 15 ns 5 15 ( CL=15pF, tr=tf=6ns,VCC=5V ) Conditions Refer to following test circuit Refer to following test circuit 28 CMOS LOGIC IC ELM7S04,ELM7S04B Inverter Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 22 125 155 tTLH 4.5 8 25 31 ns 6.0 6 21 26 Refer to test circuit 2.0 16 125 155 tTHL 4.5 7 25 31 ns 6.0 6 21 26 2.0 18 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Refer to test circuit 2.0 17 100 125 tPHL 4.5 7 20 25 ns 6.0 6 17 21 CIN 5 10 10 pF CPD 10 pF * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC Pulse Oscillator INPUT OUTPUT CL 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns 90% INPUT VCC 90% 50% 50% 10% 10% GND tTHL OUTPUT tTLH 90% 90% VOH 50% 50% 10% 10% VOL tPHL tPLH 29 ELM7SU04,ELM7SU04B Unbuffer Inverter ■ DESCRIPTION ELM7SU04,ELM7SU04B are CMOS unbuffer inverter ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・| IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 1 4 2 3 Pin No. 1 2 3 4 5 Pin Name NC INY GND OUTX VCC Input INA Low High Output OUTX High Low ■ MARKING SOT-25 ① ② ③ No. ① ② ③ Ma rk E 6 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7SU04, ELM7SU04B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 30 Units V V V mA mA mA mA mW ℃ CMOS LOGIC IC ELM7SU04,ELM7SU04B Unbuffer Inverter ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. Symbol VCC VIN VOUT Top High-input down-time tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Input Voltage Output Voltage Input Current Static Current Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.7 1.7 VIH 4.5 3.6 3.6 V 6.0 4.8 4.8 2.0 0.3 0.3 VIL 4.5 0.9 0.9 V 6.0 1.2 1.2 2.0 1.8 2.0 1.8 VIN= 4.5 4.0 4.5 4.0 VIL IOH = -20μA VOH 6.0 5.5 6.0 5.5 V 4.5 4.18 4.31 4.13 IOH = -2mA 6.0 5.68 5.80 5.63 IOH = -2.6mA 2.0 0.0 0.2 0.2 VIN= 4.5 0.0 0.5 0.2 VIH IOL = 20μA VOL 6.0 0.0 0.5 0.5 V 4.5 0.17 0.26 0.33 IOL = 2mA 6.0 0.18 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND ■AC ELECTRICAL CHARACTERISTICS Parameter Sym. High Output tTLH Down-time tTHL tPLH Propagation Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 3 10 5 15 ns 5 15 ( CL=15pF, tr=tf=6ns,VCC=5V ) Conditions Refer to following test circuit Refer to following test circuit 31 CMOS LOGIC IC ELM7SU04,ELM7SU04B Unbuffer Inverter Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 29 125 155 tTLH 4.5 11 25 31 ns 6.0 11 21 26 Refer to test circuit 2.0 26 125 155 tTHL 4.5 9 25 31 ns 6.0 8 21 26 2.0 18 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Refer to test circuit 2.0 17 100 125 tPHL 4.5 7 20 25 ns 6.0 6 17 21 CIN 5 10 10 pF CPD 10 pF * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC Pulse Oscillator INPUT OUTPUT CL 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns 90% INPUT VCC 90% 50% 50% 10% 10% GND tTHL OUTPUT tTLH 90% 90% VOH 50% 50% 10% 10% VOL tPHL tPLH 32 ELM7SU04W,ELM7SU04BW Unbuffer Inverter × 2 ■ DESCRIPTION ELM7SU04W, ELM7SU04BW are CMOS unbuffer inverter ICs. They realize a high speed operation similar to LS-TTL with a lower power consumption by CMOS features. ■ FEATURES ・ Package : SOT-26 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・| IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 6 5 4 1 2 3 Pin No. 1 2 3 4 5 6 Pin Name OUTA GND INB OUTB VCC INA Input INA INB Low High Output OUTA OUTB High Low ■ MARKING SOT-26 ① ② ③ No. ① ② ③ Ma rk E B A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7SU04W, ELM7SU04BW Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 33 Units V V V mA mA mA mA mW ℃ ×2 CMOS LOGIC IC ELM7SU04W,ELM7SU04BW Unbuffer Inverter× ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. Symbol VCC VIN VOUT Top High-input down-time tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Input Voltage Output Voltage Input Current Static Current Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.7 1.7 VIH 4.5 3.6 3.6 V 6.0 4.8 4.8 2.0 0.3 0.3 VIL 4.5 0.9 0.9 V 6.0 1.2 1.2 2.0 1.8 2.0 1.8 VIN= 4.5 4.0 4.5 4.0 VIH IOH = -20μA VOH 6.0 5.5 6.0 5.5 V or 4.5 4.18 4.31 4.13 VIL IOH = -2mA 6.0 5.68 5.80 5.63 IOH = -2.6mA 2.0 0.0 0.2 0.2 VIN= 4.5 0.0 0.5 0.5 VIH IOL = 20μA VOL 6.0 0.0 0.5 0.5 V 4.5 0.17 0.26 0.33 IOL = 2mA 6.0 0.18 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND ■AC ELECTRICAL CHARACTERISTICS Parameter Sym. High Output tTLH Down-time tTHL tPLH Propagation Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 5 10 ns 5 10 5 15 ns 5 15 ( CL=15pF, tr=tf=6ns,VCC=5V ) Conditions Refer to following test circuit Refer to following test circuit 34 ×2 CMOS LOGIC IC ELM7SU04W,ELM7SU04BW Unbuffer Inverter× Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 50 125 155 tTLH 4.5 14 25 31 ns 6.0 12 21 26 Refer to test circuit 2.0 50 125 155 tTHL 4.5 14 25 31 ns 6.0 12 21 26 2.0 48 100 125 tPLH 4.5 12 20 25 ns 6.0 9 17 21 Refer to test circuit 2.0 48 100 125 tPHL 4.5 12 20 25 ns 6.0 9 17 21 CIN 5 10 10 pF CPD 10 pF * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC Pulse Oscillator INPUT OUTPUT CL 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns 90% INPUT VCC 90% 50% 50% 10% 10% GND tTHL OUTPUT tTLH 90% 90% VOH 50% 50% 10% 10% VOL tPHL tPLH 35 ELM7S86,ELM7S86B 2-input EXCLUSIVE OR Gate ■ DESCRIPTION ELM7S86,ELM7S86B are CMOS 2-input EXOR gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains a wider noise immunity and a constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・| IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 1 4 2 3 Pin No. 1 2 3 4 5 Pin Name INB INA GND OUTX VCC Input INA INB Low Low Low High High Low High High Output OUTX Low High High Low ■ MARKING SOT-25 ① ② ③ No. ① ② ③ Ma rk E 8 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S86, ELM7S86B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 36 Units V V V mA mA mA mA mW ℃ CMOS LOGI IC ELM7S86,ELM7S86B 2-input EXCLUSIVE OR Gate ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. Symbol VCC VIN VOUT Top High-input down-time tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Input Voltage Output Voltage Input Current Static Current Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIH IOH = -20μA VOH 6.0 5.9 6.0 5.9 V or 4.5 4.18 4.31 4.13 VIL IOH = -2mA 6.0 5.68 5.80 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20μA VOL 6.0 0.0 0.1 0.1 V 4.5 0.17 0.26 0.33 IOL = 2mA 6.0 0.18 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND ■AC ELECTRICAL CHARACTERISTICS ( CL=15pF, tr=tf=6ns,VCC=5V ) Parameter Sym. High Output tTLH Down-time tTHL Propagation tPLH Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 7 10 ns 7 10 9 20 ns 9 20 Conditions Refer to following test circuit Refer to following test circuit 37 CMOS LOGI IC ELM7S86,ELM7S86B 2-input EXCLUSIVE OR Gate ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 50 125 155 tTLH 4.5 14 25 31 ns 6.0 12 21 26 Refer to test circuit 2.0 50 125 155 tTHL 4.5 14 25 31 ns 6.0 12 21 26 2.0 60 135 170 tPLH 4.5 16 27 34 ns 6.0 10 22 28 Refer to test circuit 2.0 60 135 170 tPHL 4.5 16 27 34 ns 6.0 10 22 28 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC Pulse Oscillator INPUT OUTPUT CL 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns 90% INPUT VCC 90% 50% 50% 10% 10% tPLH 90% VOH 90% 50% OUTPUT GND tPHL 50% 10% 10% tTLH tTHL 38 VOL ELM7S66,ELM7S66B Analog Switch ■ DESCRIPTION ELM7S66,ELM7S66B are CMOS analog switches. They realize a high speed operation with low power consumption by CMOS features. With a low on resistance and a high transmission rate, they realize a wider input voltage range. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・| IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 1 4 2 3 Pin No. 1 2 3 4 5 Pin Name IN/OUT OUT/IN GND Control VCC Control Low High Switch OFF ON ■ MARKING SOT-25 ① ② ③ No. ① ② ③ Ma rk E 9 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S66, ELM7S66B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 39 Units V V V mA mA mA mA mW ℃ CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch ■ SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Symbol VCC VIN VOUT Top tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Sym. VIH Input Voltage VIL ON-Resistor RON IS (Off) IS SW-ON Leak-Current (On) Cont Input Current ICONT Static Current ICC SW-Off Leak-Current Top = 25℃ Top = -40∼+85℃ VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 1.5 1.5 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 2000 5000 6250 VCONT=VIH 4.5 100 200 250 Ω VIN=0∼VCC IIN/OUT=1mA 6.0 60 170 210 6.0 -0.1 - 0.1 -1.0 1.0 μA 6.0 -0.1 - 0.1 -1.0 1.0 μA 6.0 6.0 -0.1 - - 0.1 1.0 -1.0 - 1.0 10.0 μA μA 40 VCONT=VIL VIN=VCC, VOUT=GND VCONT=VIH VIN = VCC or GND VIN = VCC or GND VIN = VCC or GND CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch ■AC ELECTRICAL CHARACTERISTICS ( tr=tf=6ns ) Parameter Sym. tPLH Propagation Delay-time tPHL tZL Output Enable-Time tZH tLZ Output Disable-Time tHZ Maximum Control Input Frequency Control Iutput Capacity fIN CIN SW-Input/Output CIN/OUT Capacity Feed-Through Capacity CIN-OUT Equivalent Inner Capacity CPD T a = - 4 0 ∼+ 8 5 ℃ Ta = 25℃ VCC Min. Typ. Max. Min. Max. Units 2.0 50 65 3.3 4 10 13 ns 5.0 9 11 2.0 - 115 145 3.3 10 23 29 ns 5.0 20 -25 2.0 - 115 145 4.5 14 23 29 ns 6.0 20 -25 2.0 20 4.5 30 MHz 6.0 30 5 10 10 pF - - 6 - - - pF - - 0.5 13 - - - pF pF Conditions CL=50pF RL=10kΩ CL=50pF RL=1kΩ CL=50pF RL=1kΩ RL=1kΩ CL=15pF VOUT=VCC/2 Refer to test cicuit * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC 41 CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch ■ TEST CIRCUIT ● RON : ON Resister VCC VCONT=VIH VCC VIN=VCC VOUT (ON) GND VIN - VOUT (Ω) 10-3 RON = 1.OmA - + v VIN-VOUT ● IS(OFF) : SW-OFF leak, IS(ON) : SW-ON leak Current VCC VCONT=VIL VIN= VCC or GND VCC (OFF) A VCC VCONT=VIH VIN= VCC or GND VOUT= GND or VCC VCC VOUT OPEN (OFF) A GND GND ● tPLH, tPHL : Propagation dely-time (SW-input → SW-output) VCC VCONT tr VCC VIN Pulse Oscillator 90% VOUT (ON) RL= 10kΩ CL= 50pF 42 VCC 90% 50% 50% VIN GND 50Ω tf 10% 10% 50% VOUT tPLH GND VOH 50% tPHL VOL CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch ● tZH, tZL/tHZ, tLZ : Output enable, Output disable time VCC Pulse Oscillator VCONT RL= 1kΩ VCC VIN VOUT S1 S2 GND 50Ω tr RL= 1kΩ tf 90% VCC 90% 50% 50% VCONT CF= 50pF 10% 10% GND VOH 90% 50% VOL VOUT VOH 90% 50% 10% 10% tZH S1 VCC GND VCC GND tZH tZL tHZ tLZ S2 GND VCC GND VCC VOL tHZ ● Maximum controlled input frequency VCC VCONT 6ns VCC 6ns 90% VCC 90% VOUT VIN=VCC VCONT GND CL= 50pF RL= 1kΩ 10% 10% VCC/2 VOUT ● Feed-through capacity VCC VCONT=VIL 0.1μF VCC VIN fin (OFF) GND CL= 50pF RL= 600Ω * VIN = VCC/2 VCC/2 43 GND 0dB, f = 1MHz ELM7S14,ELM7S14B SCHMITT Inverter ■ DESCRIPTION ELM7S14,ELM7S14B are CMOS schmitt inverter ICs. They realizes a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains a wider noise immunity and a constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・| IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 1 4 2 3 Pin No. 1 2 3 4 5 Pin Name NC INY GND OUTX VCC Input INA Low High Output OUTX High Low ■ MARKING SOT-25 ① ② ③ No. ① ② ③ Ma rk E A A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S14, ELM7S14B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 44 Units V V V mA mA mA mA mW ℃ CMOS LOGIC IC ELM7S14,ELM7S14B SCHMITT Inverter ■ SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. Symbol VCC VIN VOUT Top High-input down-time tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Threshold Voltage Hysteresis Voltage Output Voltage Input Current Static Current Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 Vt+ 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.3 0.3 Vt4.5 0.9 0.9 V 6.0 1.2 1.2 2.0 0.2 1.2 0.2 1.2 Vh 4.5 0.4 2.25 0.4 2.25 V 6.0 0.6 3.0 0.6 3.0 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIH IOH = -20μA VOH 6.0 5.9 6.0 5.9 V or 4.5 4.18 4.31 4.13 VIL IOH = -2mA 6.0 5.68 5.80 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20μA VOL 6.0 0.0 0.1 0.1 V 4.5 0.17 0.26 0.33 IOL = 2mA 6.0 0.18 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND 45 CMOS LOGIC IC ELM7S14,ELM7S14B SCHMITT Inverter ■AC ELECTRICAL CHARACTERISTICS ( CL=15pF, tr=tf=6ns,VCC=5V ) Parameter Sym. High Output tTLH Down-time tTHL tPLH Propagation Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 5 10 ns 5 10 7 15 ns 7 15 Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity Conditions Refer to following test circuit Refer to following test circuit ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 50 125 155 tTLH 4.5 14 25 31 ns 6.0 12 21 26 Refer to test circuit 2.0 50 125 155 tTHL 4.5 14 25 31 ns 6.0 12 21 26 2.0 48 100 125 tPLH 4.5 12 20 25 ns 6.0 9 17 21 Refer to test circuit 2.0 48 100 125 tPHL 4.5 12 20 25 ns 6.0 9 17 21 CIN 5 10 10 pF CPD 10 pF * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC 46 CMOS LOGIC IC ELM7S14,ELM7S14B SCHMITT Inverter ■ TEST CIRCUIT VCC OUTPUT INPUT Pulse Oscillator CL 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns 90% 50% 50% INPUT VCC 90% 10% 10% GND tTHL OUTPUT tTLH 90% 90% VOH 50% 50% 10% 10% VOL tPHL tPLH 47