ETC HW-108C

InSb Hall Element
HW-108C
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•High-linearity InSb Hall element.
•Super mini-mold SMT package (fits SOT 343 land pattern).
•Shipped in packet-tape reel (4000pcs per reel).
Note : It is requested to read and accept "IMPORTANT NOTICE".
•Absolute Maximum Ratings
Item
Symbol
Limit
Unit
Max. Input Current
Ic
20
mA
Operating Temp. Range
Topr.
–40 to +110
˚C
Storage Temp. Range
Tstg.
–40 to +125
˚C
Const. Current Drive
•Classification of Output Hall Voltage (VH)
VH [ mV ]
Rank
Conditions
•Electrical Characteristics(Ta=25˚C)
Symbol
Output Hall Voltage
VH
Conditions
Min.
Const. Voltage Drive
Typ.
Max.
Unit
74
mV
41
B=50mT, Vc=IV
Rin
B=0mT, Ic=0.1mA
250
450
Output Resistance
Rout
B=0mT, Ic=0.1mA
250
450
Offset Voltage
Vos
B=0mT, Vc=IV
–7
+7
Temp. Coefficient of Rin
to
57
B=50mT, Vc=IV
Constant Voltage Drive
51
to
74
•Input Current Derating Curve
mV
Input Resistance
Rin : 250 to 450Ω
450
20
VH
B=50mT, Ic=5mA
–1.8
%/˚C
Rin
B=0mT, Ic=0.1mA
–1.8
%/˚C
Dielectric Strength
41
R
Input Resistance
Temp. Coefficient of VH
Q
100V D.C
1.0
Input Current(mA)
Item
M
10
Notes : 1. VH = VHM – Vos (VHM:meter indication)
1
3) – VH (T2)
X 100
2. VH = VH (T1) X VH (T
(T3 – T2)
1
3) – Rin (T2)
X 100
3. Rin = Rin (T1) X Rin (T
(T – T )
3
0
–60
2
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C
2
80
100
120
Input Resistance
Input Voltage(V)
N
1.25±0.1
2.1±0.2
60
5˚
4
Rin : 250 to 450
2.0
5˚
0.25
40
1
0.1
1.0
0.55
5˚
Pinning
0
–60
5˚
Input
1(±)
3
Output
2(±)
4
–40
– 20
0
20
40
60
80
100
120
Ambient Temperature.(˚C)
(±)
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
(±)
+0.1
0.8 0
20
•Input Voltage Derating Curve
0.25
0.4
0.3
0 to 0.1
3
0
Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
throughout the operating temperature range.
2.1±0.1
1.3
– 20
Ambient Temperature.(˚C)
•Dimensional Drawing (mm)
0.4
–40
33
HW-108C
•Characteristic Curves
b
VH-B
1600
100
1400
90
Output Voltage:VH(mV)
Input Resistance:Rin( )
Rin-T
1200
1000
800
600
400
Ic const
Vc const
80
60
50
30
10
0
–50
0
50
100
0
0
150
10
20
Ambient Temperature(˚C)
Ic = 5 (mA)
Vc = 1 (V)
B = 50 (mT)
250
Ic const
Vc const
200
B = 50 (mT)
Ta = 25 (˚C)
Ic
150
100
Vin
g
50
0
50
100
0
0.0
150
5
10
15
20 Ic:(mA)
0.5
1.0
1.5
2.0 Vc:(V)
Ic (mA) Input Current
Vc (V) Input Voltage
Vos-Vc, Vos-Ic
20
20
Ic const
Vc const
Ic = 5 (mA)
Vc = 1 (V)
B = 0 (mT)
Ic
10
Ic const
Vc const
18
Offset Voltage:Vos(mV)
Offset Voltage:Vos(mV)
50
300
Ic const
Vc const
Ambient Temperature(˚C)
16
i
B = 0 (mT)
Ta = 25 (˚C)
14
12
Ic
10
8
6
4
Vin
0
–50
40
VH-Vc, VH-Ic
Output Voltage:VH(mV)
390
360
330
Ic
300
270
240
210
180
150
120
90
Vin
60
30
0
–50
30
Magnetic Flux Density B (mT)
VH-T
Vos-T
c
Vin
40
20
200
Output Voltage:VH(mV)
Ic
Ic = 5 (mA)
Vc = 1 (V)
Ta = 25 (˚C)
70
Vin
2
0
50
100
150
Ambient Temperature(˚C)
*Magnetic Flux Density
1(mT)=10(G)
0
0.0
5
10
15
0.5
1.0
1.5
20 Ic:(mA)
2.0 Vc:(V)
Ic (mA) Input Current
Vc (V) Input Voltage
In This Example : Rin=340( ), Vos=2.4(mV), Vc=1(V)
34