InSb Hall Element HW-109A Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems. •High-sensitivity InSb Hall element. •SMT package with sensing area leaned 45˚. •Shipped in packet-tape reel (5000pcs per reel). Note : It is requested to read and accept "IMPORTANT NOTICE". •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range Topr. –40 to +110 ˚C Storage Temp. Range Tstg. –40 to +125 ˚C Const. Current Drive •Classification of Output Hall Voltage (VH) VH [ mV ] Rank •Electrical Characteristics(Ta=25˚C) Item Conditions Symbol Output Hall Voltage Input Resistance Min. Const. Voltage Drive VH B=50mT, Vc=IV B=0mT, Ic=0.1mA Rin Typ. 122 Max. Unit 320 250 mV 450 A 122 to 150 B 144 to 174 C 168 to 204 D 196 to 236 E 228 to 274 F 266 to 320 Conditions B=50mT, Vc=IV Constant Voltage Drive Note : When ordering, specify 3-rank or wider range(e·g·,BCD). Output Resistance Rout B=0mT, Ic=0.1mA Offset Voltage Vos B=0mT, Vc=IV 250 450 –7 +7 •Input Current Derating Curve mV Input Resistance Temp. Coefficient of Rin VH –1.8 %/˚C Rin B=0mT, Ic=0.1mA –1.8 %/˚C Dielectric Strength Rin : 250 to 450 20 B=50mT, Ic=5mA 100V D.C 1.0 Input Current(mA) Temp. Coefficient of VH M 10 Notes : 1. VH = VHM – Vos (VHM:meter indication) 1 3) – VH (T2) X 100 2. VH = VH (T1) X VH (T (T3 – T2) 1 Rin (T3) – Rin (T2) X 100 3. Rin = Rin (T1) X (T – T ) 3 0 –60 2 T1 = 20˚C, T2 = 0˚C, T3 = 40˚C 1.35±0.1 0 20 40 60 80 100 120 Note : Rin of Hall element decreases rapidly as ambient temperature increases. Ensure compliance with input current derating curve envelope, throughout the operating temperature range. 2.7±0.2 0.65 – 20 Ambient Temperature.(˚C) •Dimensional Drawing (mm) 1.45±0.1 –40 0.7 •Input Voltage Derating Curve Input Voltage(V) 1. 76 N 0. 85 Output 0 to 0.1 1(±) (±) Input 2 1.0 0 –60 –40 – 20 0 20 40 60 80 100 120 Ambient Temperature.(˚C) (±) 0.1 Pinning 0.35±0.2 Rin : 250 to 450 2.0 0.4 2 0.3 3 Input Resistance 1.3 2.1±0.1 1 4 3 Note : For constant-voltage drive, stay within this input voltage derating curve envelope. 4(±) 21 HW-109A a •Characteristic Curves Rin-T VH-B 2000 600.0 Ic const Vc const 500.0 1600 Output Voltage:VH(mV) Input Resistance:Rin( ) 1800 1400 1200 1000 800 600 400 Ic = 5 (mA) Vc = 1 (V) Ta = 25 (˚C) 400.0 Ic 300.0 c Vin 200.0 100.0 200 0 -50 0 50 100 0.0 0 150 10 20 Ambient Temperature(˚C) VH-T Ic 1250 Output Voltage:VH(mV) Output Voltage:VH(mV) Ic = 5 (mA) Vc = 1 (V) B = 50 (mT) 1500 1000 750 500 Vin Ic const Vc const 1000 Ic B = 50 (mT) Ta = 25 (˚C) 800 f 600 Vin 400 200 0 –50 0 50 100 0 0.0 150 5 10 15 20 Ic:(mA) 0.5 1.0 1.5 2.0 Vc:(V) Ic (mA) Input Current Vc (V) Input Voltage Ambient Temperature(˚C) VOS-Vc, VOS-Ic 40 20 Ic const Vc const 30 Ic = 5 (mA) Vc = 1 (V) B = 0 (mT) Ic Ic const Vc const 18 Offset Voltage:Vos(mV) Offset Voltage:Vos(mV) 50 1200 Ic const Vc const 1750 VOS-T 40 VH-Vc, VH-Ic 2000 250 30 Magnetic Flux Density B (mT) 20 10 16 i Ic B = 0 (mT) Ta = 25 (˚C) 14 12 10 8 Vin 6 4 Vin 2 0 –50 0 50 100 0 0.0 150 Ambient Temperature(˚C) 5 10 15 0.5 1.0 1.5 Ic (mA) Input Current Vc (V) Input Voltage *Magnetic Flux Density 1(mT)=10(G) In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V) 22 20 Ic:(mA) 2.0 Vc:(V)