IS2701-1 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS2701-1 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. Dimensions in mm FEATURES l Marked as FPT1. l Current Transfer Ratio MIN. 50% Isolation Voltage (3.75kVRMS ,5.3kVPK ) All electrical parameters 100% tested Drop in replacement for NEC PS2701-1 l l l APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 22/4/02 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB92850l-AAS/A3 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 35V 6V 150mW POWER DISSIPATION Total Power Dissipation 170mW (derate linearly 2.26mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Output Coupled MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 5 Collector-emitter Breakdown (BVCEO) 35 Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 6 Current Transfer Ratio (CTR) Optional CTR Grades: IS2701-1A IS2701-1B IS2701-1C IS2701-1D 1.2 V V µA IF = 20mA IR = 10µA VR = 4V V IC = 0.5mA 100 V nA IE = 0.1mA VCE = 20V 50 600 % 5mA IF , 5V VCE 80 130 200 300 160 260 400 600 % % % % 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 0.2 V 20mA IF , 1.0mA IC VRMS VPK See note 1 See note 1 Ω µs µs VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100Ω 10 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 3750 5300 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf Note 1 22/4/02 1.4 TEST CONDITION 4 3 18 18 Measured with input leads shorted together and output leads shorted together. DB92850l-AAS/A3 TAPING DIMENSIONS Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment 12/07/01 Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 12 ± 0.3 ( .47 ) 4 ± 0.1 ( .15 ) 5.5 ± 0.1 ( .217 ) 2 ± 0.1 ( .079 ) 8 ± 0.1 ( .315 ) Appendix to Mini Flat Pack FPT-AAS/A1 CHARACTERISTIC CURVES Fig.1 Forword Current vs. Ambient Temperatute Fig.2 Collector Power Dissiption vs. Ambient Temperature 200 Collector Power dissipation Pc (mW) 60 F (mA) 50 Forward current I 40 30 20 10 0 -55 0 25 50 75 100 125 150 100 50 0 -55 o 7mA 100 125 o Forward current I 4 3 2 Ta= 75 C 50 C o 200 o 25 C 0C -25 C o 100 o 50 20 10 5 1 2 1 5 0 10 15 1.0 0.5 0 Forward current I F (mA) 1.5 2.0 2.5 3.0 Forward voltage V F (V) Fig.5 Current Transfer Ratio vs. Forward Current Fig.6 Collector Current vs. Collector-emitter Voltage 200 50 VCE= 5V Ta= 25 C 180 I F = 30mA o 160 140 120 100 80 60 40 Ta= 25 C 25mA o Collector current Ic (mA) Current transfer ratio CTR (%) 75 500 O Ta= 25 C 0 40 20mA 30 15mA Pc(MAX.) 20 10mA 10 5mA 20 0 0 1 2 5 10 20 Forward current I F (mA) 12/07/01 50 Fig.4 Forward Current vs. Forward Voltage F (mA) 5mA 1mA 3mA Ic=0.5mA Collecotr-emitter saturation voltage VCE (sat) (V) 5 25 Ambient temperature Ta ( C) Fig.3 Collector-emitter Saturation Voltage vs. Forward Current 6 0 o Ambient temperature Ta ( C) 50 0 1 2 3 4 5 6 7 8 9 Collector-emitter voltage V CE (V) Appendix to Mini Flat Pack FPT-AAS/A1 CHARACTERISTIC CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.10 I F = 5mA VCE= 2V 100 50 I F = 20mA I C = 1mA Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) 150 0.08 0.06 0.04 0.02 0 0 20 40 60 80 100 20 40 o 500 VCE= 20V (nA) 200 VCE = 2V I C = 2mA Ta= 25 C o 100 Response time ( s) Collector dark current I CEO Fig.10 Response Time vs. Load Resistance 1000 100 10 50 tr 20 tf 10 td 5 ts 2 1 0.5 0.2 0.05 1 20 40 60 80 100 o 0.1 0.2 0.5 1 2 5 10 Load resistance R L (k ) Ambient temperature Ta ( C) Fig.11 Frequency Response Test Circuit for Response Time Vcc VCE= 2V I C = 2mA Ta= 25 C o 0 Voltage gain Av (dB) 100 Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Ambient Temperature 10000 80 60 o Ambient temperature Ta ( C) Input Output Input RD RL 10% Output 90% ts td 100 Ω 10 R L = 10k Ω 1k Ω tr tf Test Circuit for Frequency Response Vcc 20 0.5 1 RD 2 5 10 20 50 100 RL Output 500 Frequency f (kHz) 12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1 TEMPERATURE PROFILE OF SOLDERING REFLOW (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. 30 seconds 230 C 200 C 180 C 1 minute 25 C 2 minutes 1.5 minutes 1 minute (2) When using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1). 12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1