IS733H A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 approval pending l EN60950 approval pending DESCRIPTION The IS733H optically coupled isolator consists of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l AC or polarity insensitive input l All electrical parameters 100% tested l Custom electrical selections available Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C APPLICATIONS l Computer terminals l Industrial systems controllers l Telephone sets, Telephone exchangers l Signal transmission between systems of different potentials and impedances OUTPUT TRANSISTOR INPUT DIODE Forward Current Peak forward current Power Dissipation Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Emitter-base Voltage BVEBO Power Dissipation ±150mA ±1A 230mW 35V 35V 6V 6V 160mW POWER DISSIPATION Total Power Dissipation 320mW (derate linearly 4.27mW/°C above 25°C) ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 9/6/97 ISOCOM INC 720 E., Park Boulevard, Suite 104, Plano, TX 75074 USA Tel: (972) 423-5521 Fax: (972) 422-4549 DB92067-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER MIN TYP MAX UNITS Input Forward Voltage (VF) Output Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-base Breakdown (BVEBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (note 2 ) 15 Coupled 1.2 V IF = ±20mA 35 V IC = 1mA 35 6 6 100 V V V nA IC = 100µA IE = 100µA IE = 100µA VCE = 20V 300 % ±1mAIF , 5V V CE 0.2 V ±20mAIF , 1mAIC VRMS VPK Ω See note 1 See note 1 VIO = 500V (note 1) µs µs VCE = 2V , IC= 2mA, R L = 100Ω Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Output Rise Time Output Fall Time Note 1 Note 2 9/6/97 tr tf 1.4 TEST CONDITION 5300 7500 5x1010 4 3 18 18 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92067-AAS/A2 150 100 50 0 -30 0 25 50 75 100 125 5 8mA 6 5mA =1mA 2mA 3mA Collector-emitter Saturation Voltage vs. Forward Current TA = 25°C Ic Collector power dissipation PC (mW) 200 Collector-emitter saturation voltage VCE(SAT) (V) Collector Power Dissipation vs. Ambient Temperature 4 3 2 1 0 0 5 10 Forward current IF (±mA) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 60 TA = 25°C 50 Collector current IC (mA) Forward current IF (±mA) 50 40 30 20 10 0 ±50 ±30 40 ±20 30 ±15 20 ±10 10 IF = ±5mA 0 -30 0 25 50 75 100 125 0 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 320 0.14 0.12 Current transfer ratio CTR (%) Collector-emitter saturation voltage VCE(SAT) (V) Ambient temperature TA ( °C ) IF = ±20mA IC = 1mA 0.10 0.08 0.06 0.04 0.02 280 240 200 160 120 80 VCE = 5V TA = 25°C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 9/6/97 15 100 1 2 5 10 20 50 Forward current IF (±mA) DB92067-AAS/A2