Product Description Stanford Microdevices NGA-489 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 10 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 65mA , the NGA-489 typically provides +38.0 dBm output IP3, 14.8 dB of gain, and +17.2 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. (from de-imbedded S-parameters) -6 -12 11 IRL -18 9 -24 ORL 7 5 0 1 2 3 4 5 6 7 Frequency (GHz) Sy mbol G 8 9 Return Loss (dB) Gain (dB) 0 GAIN 13 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features High Gain : 14.5 dB at 1950 MHz Cascadable 50 Ohm Patented InGaP Technology Gain & Return Loss vs. Freq. @T L=+25°C 15 NGA-489 Operates From Single Supply Low Thermal Resistance Package Applications -30 Cellular, PCS, CDPD -36 Wireless Data, SONET 10 Parameter Small Signal Gain Satellite Units Frequency Min. Ty p. Max. dB dB dB 850 M Hz 1950 M Hz 2400 M Hz 13.5 14.8 14.5 14.2 16.0 P1dB Output Pow er at 1dB Compression dBm dBm 850 M Hz 1950 M Hz 17.2 17.0 OIP3 Output Third Order Intercept Point dBm dBm 850 M Hz 1950 M Hz 38.0 37.0 Bandw idth Determined by Return Loss (<-10dB) IRL M Hz 10000 Input Return Loss dB 1950 M Hz 19.7 Output Return Loss dB 1950 M Hz 27.0 NF Noise Figure dB 1950 M Hz 4.2 VD Device Voltage V RTh Thermal Resistance ORL Test Conditions: VS = 8 V RBIAS = 62 Ohms °C/W ID = 65 mA Typ. TL = 25ºC 3.6 4.0 4.4 145 OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-100375 Rev C Preliminary NGA-489 0.5-10 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Frequency (MHz) Sy mbol Unit 500 850 1950 2400 3500 dB 14.6 14.8 14.5 14.4 14.2 Output Third Order Intercept Point dBm 37.6 38.0 37.0 34.9 31.7 P1dB Output Pow er at 1dB Compression dBm 17.2 17.2 17.0 16.7 15.8 IRL Input Return Loss dB 26.0 24.0 19.7 18.0 17.0 ORL Output Return Loss dB 33.0 32.0 27.0 26.0 27.0 G Parameter Small Signal Gain OIP3 S12 Reverse Isolation dB 18.3 18.3 18.6 18.7 19.0 NF Noise Figure dB 4.3 4.3 4.2 4.2 4.4 VS = 8 V RBIAS = 62 Ohms Test Conditions: ID = 65 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Noise Figure vs. Frequency Noise Figure (dB) Absolute Maximum Ratings VD= 4.0 V, ID= 65 mA 7 6 Parameter Absolute Limit Max. Device Current (ID) 100 mA Max. Device Voltage (VD) 6V 5 Max. RF Input Pow er +15 dBm Max. Junction Temp. (TJ) +150°C 4 Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C TL=+25ºC 3 Operation of this device beyond any one of these limits may cause permanent damage. 2 0 1 2 3 4 Frequency (GHz) 5 Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth 6 OIP3 vs. Frequency P1dB vs. Frequency VD= 4.0 V, ID= 65 mA VD= 4.0 V, ID= 65 mA 45 TL +25°C -40°C +85°C TL 18 P1dB(dBm) OIP3 (dBm) 40 20 35 30 +25°C -40°C +85°C 16 14 12 25 10 20 0 1 2 3 4 Frequency (GHz) 726 Palomar Ave., Sunnyvale, CA 94085 5 6 Phone: (800) SMI-MMIC 2 0 1 2 3 4 Frequency (GHz) 5 6 http://www.stanfordmicro.com EDS-100375 Rev C Preliminary NGA-489 0.5-10 GHz Cascadable MMIC Amplifier S21 vs. Frequency TL 18 VD= 4.0 V, ID= 65 mA -10 +25°C -40°C +85°C -15 S11 (dB) 20 S21 (dB) S11 vs. Frequency VD= 4.0 V, ID= 65 mA 16 14 12 -20 -30 10 -35 0 1 2 3 4 Frequency (GHz) 5 0 6 1 S12 vs. Frequency TL -20 -19 S22 (dB) S12 (dB) 5 6 5 6 VD= 4.0 V, ID= 65 mA -15 +25°C -40°C +85°C TL -17 2 3 4 Frequency (GHz) S22 vs. Frequency VD= 4.0 V, ID= 65 mA -15 -21 -23 +25°C -40°C +85°C -25 -30 -35 -25 -40 0 1 2 3 4 Frequency (GHz) 5 6 0 VD vs. ID over Temperature for fixed VS= 8 V, RBIAS= 62 ohms * 75 4.35 +25°C 65 -40°C 60 VD (Volts) 80 +85°C 1 2 3 4 Frequency (GHz) VD vs. Temperature for Constant ID = 65 mA 4.50 70 ID (mA) +25°C -40°C +85°C TL -25 4.20 4.05 3.90 3.75 55 50 3.8 3.60 3.9 4 4.1 4.2 -40 VD (Volts) -15 10 35 Temperature (°C) 60 85 * Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-100375 Rev C Preliminary NGA-489 0.5-10 GHz Cascadable MMIC Amplifier NGA-489 Basic Application Circuit Application Circuit Element Values R BIAS VS 1 uF 1000 pF 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD LC 1 RF in 4 NGA-489 3 RF out CB 2 CB Frequency (Mhz) Reference Designator Recommended Bias Resistor Values for ID=65mA Supply Voltage (VS) 6V RBIAS 30 62 10 V 91 12 V 120 Note: RBIAS provides DC bias stability over temperature. VS 1 uF RBIAS N4 8V LC 1000 pF CD 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated CB CB Mounting Instructions through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking The part will be marked with an N4 designator on the top surface of the package. Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 4 2 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. N4 3 For package dimensions, refer to outline drawing at www.stanfordmicro.com Caution: ESD sensitive 4 GND Sames as Pin 2 Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. 726 Palomar Ave., Sunnyvale, CA 94085 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. 3 3 2 2 1 1 Description Part Number Reel Size Devices/Reel NGA-489 7" 1000 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-100375 Rev C