OM6005SC OM6007SC OM6105SC OM6107SC OM6006SC OM6008SC OM6106SC OM6108SC POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • • • Isolated Hermetic Metal Package Bi-Lateral Zener Gate Protection (Optional) Fast Switching, Low Drive Current Ease Of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener clamps in the OM6105SC series. MAXIMUM RATINGS PART NUMBER OM6005SC/OM6105SC OM6006SC/OM6106SC OM6007SC/OM6107SC OM6008SC/OM6108SC Note: VDS 100 V 200 V 400 V 500 V RDS(on) .065 .095 0.3 0.4 OM6105SC thru OM6108SC is supplied with zener gate protection. OM6005SC thru OM6008SC is supplied without zener gate protection. SCHEMATIC WITHOUT ZENER CLAMPS OM6005SC - 6008SC WITH ZENER CLAMPS OM6105SC - 6108SC 1 - DRAIN 1 - DRAIN 3 - GATE 3 - GATE ZENERS 2 - SOURCE 2 - SOURCE 4 11 R5 Supersedes 1 07 R4 3.1 - 75 ID 35 A 30 A 15 A 13 A 3.1 (TC = 25°C unless otherwise noted) STATIC P/N OM6105SC/OM6005SC (100V) BVDSS Drain-Source Breakdown Voltage VGS(th) Gate-Threshold Voltage IGSS Gate-Body Leakage (OM6105) IGSS Gate-Body Leakage (OM6005) IDSS Zero Gate Voltage Drain Min. Typ. Max. Units Test Conditions 100 On-State Drain Current1 VDS(on) Static Drain-Source On-State RDS(on) RDS(on) Gate-Threshold Voltage ± 500 nA VGS = ± 12.8 V IGSS Gate-Body Leakage (OM6106) ± 100 nA VGS = ± 20 V IGSS Gate-Body Leakage (OM6006) 0.25 mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 1.0 1.3 mA .09 VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 20 A 200 ID(on) On-State Drain Current1 VDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State Resistance1 VGS = 10 V, ID = 20 A, RDS(on) Static Drain-Source On-State Resistance1 TC = 125 C DYNAMIC V 2.0 0.1 Current Voltage1 VGS = 10 V, ID = 20 A 0.11 Min. Typ. Max. Units Test Conditions 0.2 TC = 125° C VGS = 0, ID = 250 mA 4.0 V VDS = VGS, ID = 250 mA ± 500 nA VGS = ± 12.8 V ± 100 nA VGS = ± 20 V 0.25 mA 1.0 30 1.36 1.52 mA VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A .085 .095 VGS = 10 V, ID = 16 A, 0.14 0.17 TC = 125 C DYNAMIC (W ) 3.1 - 76 Resistance1 VDS = 0.8 Max. Rat., VGS = 0, A 0.55 0.65 Static Drain-Source On-State Voltage VGS(th) 1.1 Resistance1 ID = 250 mA Drain-Source Breakdown VDS = VGS, ID = 250 mA 35 Static Drain-Source On-State BVDSS V 0.2 Voltage1 Parameter VGS = 0, 4.0 0.1 Current ID(on) V 2.0 (TC = 25°C unless otherwise noted) (W ) Parameter ELECTRICAL CHARACTERISTICS: STATIC P/N OM6106SC/OM6006SC (200V) gfs Forward Transductance1 gfs Forward Transductance1 Ciss Input Capacitance 2700 pF VGS = 0 Ciss Input Capacitance 2400 pF VGS = 0 Coss Output Capacitance 1300 pF VDS = 25 V Coss Output Capacitance 600 pF VDS = 25 V Crss Reverse Transfer Capacitance 470 pF f = 1 MHz Crss Reverse Transfer Capacitance 250 pF f = 1 MHz td(on) Turn-On Delay Time 28 ns VDD = 30 V, ID @ 20 A td(on) Turn-On Delay Time 25 ns VDD = 75 V, ID @ 16 A Rg = 5.0 W , VG = 10V Rg = 5.0 W ,VGS = 10V 9.0 10 S(W ) VDS 2 VDS(on), ID = 20 A 10.0 12.5 S(W ) VDS 2 VDS(on), ID = 16 A tr Rise Time 45 ns tr Rise Time 60 ns td(off) Turn-Off Delay Time 100 ns td(off) Turn-Off Delay Time 85 ns tf Fall Time 50 ns tf Fall Time 38 ns BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current (Body Diode) ISM Source Current1 (Body Diode) VSD Diode Forward Voltage1 trr Reverse Recovery Time 400 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. - 40 A - 160 A - 2.5 V ns BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER D IS the integral P-N G Junction rectifier. ISM TJ = 150 C, IF = IS, Source Current1 (Body Diode) S TC = 25 C, IS = -40 A, VGS = 0 dlF/ds = 100 A/ms Continuous Source Current (Body Diode) symbol showing VSD Diode Forward Voltage1 trr Reverse Recovery Time 350 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. - 30 A - 120 A -2 V ns Modified MOSPOWER D symbol showing the integral P-N G Junction rectifier. S TC = 25 C, IS = -30 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms OM6005SC - OM6108SC 3.1 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) STATIC P/N OM6107SC/OM6007SC (400V) BVDSS Min. Typ. Max. Units Test Conditions Drain-Source Breakdown Voltage VGS(th) Gate-Threshold Voltage IGSS Gate-Body Leakage (OM6107) IGSS Gate-Body Leakage (OM6007) IDSS Zero Gate Voltage Drain 400 ID(on) On-State Drain VDS(on) Static Drain-Source On-State Static Drain-Source On-State Resistance1 Static Drain-Source On-State VGS(th) Gate-Threshold Voltage ± 500 nA VGS = ± 12.8 V IGSS Gate-Body Leakage (OM6108) ± 100 nA VGS = ± 20 V IGSS Gate-Body Leakage (OM6008) 0.25 mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 1.0 2.0 2.4 0.25 0.3 mA VDS = 0.8 Max. Rat., VGS = 0, 500 VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 8.0 A 0.1 Current 0.2 Current1 ID(on) On-State Drain VDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State Resistance1 VGS = 10 V, ID = 8.0 A, RDS(on) Static Drain-Source On-State DYNAMIC ID = 250 mA V VDS = VGS, ID = 250 mA ± 500 nA VGS = ± 12.8 V ± 100 nA VGS = ± 20 V 0.25 mA 1.0 2.1 2.8 0.3 0.4 mA VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A, 0.66 0.88 Resistance1 TC = 125 C VGS = 0, 4.0 13 Voltage1 VGS = 10 V, ID = 8.0 A V 2.0 TC = 125° C A 0.50 0.60 Resistance1 Voltage TC = 125 C DYNAMIC (W ) 3.1 - 77 RDS(on) ID = 250 mA Min. Typ. Max. Units Test Conditions Drain-Source Breakdown VDS = VGS, ID = 250 mA 15 Voltage1 BVDSS V 0.2 Current1 Parameter VGS = 0, 4.0 0.1 Current RDS(on) V 2.0 (TC = 25°C unless otherwise noted) (W ) Parameter ELECTRICAL CHARACTERISTICS: STATIC P/N OM6108SC/OM6008SC (500V) gfs Forward Transductance1 gfs Forward Transductance1 Ciss Input Capacitance 2900 pF VGS = 0 Ciss Input Capacitance 2600 pF VGS = 0 Coss Output Capacitance 450 pF VDS = 25 V Coss Output Capacitance 280 pF VDS = 25 V Crss Reverse Transfer Capacitance 150 pF f = 1 MHz Crss Reverse Transfer Capacitance 40 pF f = 1 MHz td(on) Turn-On Delay Time 30 ns VDD = 200 V, ID @ 8.0 A td(on) Turn-On Delay Time 30 ns VDD = 210 V, ID @ 7.0 A Rg =5.0 W , VGS =10V Rg = 5.0 W , VGS = 10 V 6.0 9.6 S(W ) VDS 2 VDS(on), ID = 8.0 A 5.0 7.2 S(W ) VDS 2 VDS(on), ID = 7.0 A tr Rise Time 40 ns tr Rise Time 46 ns td(off) Turn-Off Delay Time 80 ns td(off) Turn-Off Delay Time 75 ns tf Fall Time 30 ns tf Fall Time 31 ns BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current ISM Source Current1 (Body Diode) VSD Diode Forward Voltage1 trr Reverse Recovery Time 600 - 15 A - 60 A - 1.6 V ns D IS the integral P-N G Junction rectifier. ISM TJ = 100 C, IF = IS, 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Source Current1 (Body Diode) S TC = 25 C, IS = -15 A, VGS = 0 dlF/ds = 100 A/ms Continuous Source Current (Body Diode) symbol showing VSD Diode Forward Voltage1 trr Reverse Recovery Time 700 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. - 13 A - 52 A - 1.4 V ns Modified MOSPOWER D symbol showing the integral P-N G Junction rectifier. S TC = 25 C, IS = -13 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms 3.1 OM6005SC - OM6108SC (Body Diode) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER OM6005SC - OM6108SC ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) OM6005SC OM6006SC OM6007SC OM6008SC Units OM6105SC OM6106SC OM6107SC OM6108SC Parameter VDS Drain-Source Voltage 100 200 400 500 V VDGR Drain-Gate Voltage (RGS = 1 M ) 100 200 400 500 V ID @ TC = 25°C Continuous Drain Current2 ±35 ±30 ±15 ±13 A ID @ TC = 100°C Continuous Drain Current2 ± 25 ±19 ±9 ±8 A ID Pulsed Drain Current1 ±160 ±120 ±60 ±52 A PD @ TC = 25°C Maximum Power Dissipation 125 125 125 125 W PD @ TC = 100°C Maximum Power Dissipation 50 50 50 50 W Junction To Case Linear Derating Factor1 1.0 1.0 1.0 1.0 W/°C Junction To Ambient Linear Derating Factor .025 .025 .025 .025 W/°C TJ Operating and Tstg Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 °C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. 2 Package Pin Limitation = 35 Amps THERMAL RESISTANCE (MAXIMUM) at TA = 25°C RthJC Junction-to-Case 1.0 °C/W RthJA Junction-to-Ambient 40 °C/W Free Air Operation MECHANICAL OUTLINE WITH PIN CONNECTION POWER DERATING .270 .240 .695 .685 .165 .155 .045 .035 .835 .815 .707 .697 3.1 .550 .530 1 2 3 .092 MAX. Pin 1: Drain Pin 2: Source Pin 3: Gate .750 .500 .005 .065 .055 .200 TYP. .140 TYP. PACKAGE OPTIONS MOD PAK Z-TAB 6 PIN SIP Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only. Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246