SBP13005 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c ◆ Very High Switching Speed (Typical [email protected]) ◆ Minimum Lot-to-Lot hFE Variation ◆ Low VCE(sat) (Typical [email protected]/0.5A) ◆ Wide Reverse Bias S.O.A ○ 3.Emitter General Description This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-220 1 2 3 Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage ( VBE = 0 ) 700 V VCEO Collector-Emitter Voltage ( IB = 0 ) 400 V VEBO Emitter-Base Voltage ( IC = 0 ) 9.0 V Collector Current 4.0 A Collector Peak Current ( tP ＜ 5 ms ) 8.0 A Base Current 2.0 A IBM Base Peak Current ( tP ＜ 5 ms ) 4.0 A PC Total Dissipation at TC = 25 °C 75 W - 65 ~ 150 °C 150 °C Value Units IC ICM IB TSTG TJ Storage Temperature Max. Operating Junction Temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case 1.67 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Oct, 2002. Rev. 1 1/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved SBP13005 Electrical Characteristics Symbol ( TC = 25 °C unless otherwise noted ) Parameter Condition Min Typ Max Units - - 1.0 5.0 mA 400 - - V Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0A IC = 2.0A IC = 4.0A IB = 0.2A IB = 0.5A IB = 1.0A - - 0.3 0.5 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.0A IC = 2.0A IB = 0.2A IB = 0.5A - - 1.2 1.6 V hFE DC Current Gain IC = 1.0A IC = 2.0A VCE = 5V VCE = 5V 10 8 - 40 40 ts tf Resistive Load Storage Time Fall Time IC = 2.0A IB1 = 0.4A - 2.5 0.15 4.0 0.4 ㎲ ts tf Inductive Load Storage Time Fall Time VCC = 15V IB1 = 0.4A L = 0.35mH IC = 2.0A IB2 = - 1.0A Vclamp = 300V - 1.1 0.07 2.0 0.3 ㎲ ts tf Inductive Load Storage Time Fall Time VCC = 15V IB1 = 0.4A L = 0.35mH IC = 2.0A IB2 = - 1.0A Vclamp = 300V TC = 100 °C - 1.2 0.08 3.0 0.4 ㎲ ICEV VCC = 125V IB2 = - 0.4A TP = 25㎲ ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% 2/6 TC = 100 °C SBP13005 Fig 1. Static Characteristics Fig 2. DC Current Gain 45 6 IB = 800mA 35 IB = 600mA 4 hFE, DC Current Gain IC, Collector Current [A] 40 IB = 1000mA 5 IB = 500mA IB = 400mA IB = 300mA 3 IB = 200mA 2 IB = 100mA o TJ = 125 C 30 25 o TJ = 25 C 20 15 ※ Notes : 10 VCE = 5V VCE = 1V 1 5 IB = 0mA 0 0 1 2 3 4 0 0.01 5 0.1 Fig 4. Base-Emitter Saturation Voltage Fig 3. Collector-Emitter Saturation Voltage 1.2 10 1.1 VBE, Base-Emitter Voltage [V] VCE, Collector-Emitter Voltage [V] 1 IC, Collector Current [A] VCE, Collector-Emitter Voltage [V] 1 o TJ = 125 C 0.1 o TJ = 25 C ※ Note : hFE = 5 0.01 0.1 1 1.0 o TJ = 25 C 0.9 0.8 0.7 o TJ = 125 C 0.6 ※ Note : hFE = 5 0.5 0.4 0.1 10 1 IC, Collector Current [A] 10 IC, Collector Current [A] Fig 6. Resistive Load Storage Time Fig 5. Resistive Load Fall Time 1000 10 o o TJ = 25 C t, Time [us] t, Time [ns] TJ = 25 C 100 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 10 0 1 2 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 3 IC, Collector Current [A] 4 1 5 0 1 2 3 4 IC, Collector Current [A] 3/6 SBP13005 Fig 7. Safe Operation Areas Fig 8. Reverse Biased Safe Operation Areas 5 1 0 10 100 µs DC 500 µs 1ms -1 10 ※ Notes : TJ ≤ 100 °C IB1 = 2 A RBB = 0 Ω LC = 0.35mH 4 10 µs IC, Collector Current [A] IC, Collector Current [A] 10 3 2 VBE(off) = -9V 1 -5V ※ Single Pulse -1.5V -2 10 0 1 10 2 10 3 10 10 Fig 9. Power Derating Curve Power Derating Factor (%) 125 100 75 50 25 0 50 100 150 o TC, Case Temperature ( C) 4/6 0 100 200 300 400 500 -3V 600 VCE, Collector-Emitter Clamp Voltage [V] VCE, Collector-Emitter Clamp Voltage [V] 0 0 200 700 800 SBP13005 Inductive Load Switching & RBSOA Test Circuit LC f IC IB1 IB VCE D.U.T RBB VClamp VCC VBE(off) Resistive Load Switching Test Circuit RC IC IB1 IB VCE D.U.T RBB VCC VBE(off) 5/6 SBP13005 TO-220 Package Dimension Dim. mm Typ. Min. 9.7 6.3 9.0 12.8 1.2 A B C D E F G H I J K L M N O Max. 10.1 6.7 9.47 13.3 1.4 Inch Typ. Min. 0.382 0.248 0.354 0.504 0.047 1.7 2.5 0.067 0.098 3.0 1.25 2.4 5.0 2.2 1.42 0.45 0.7 3.4 1.4 2.7 5.15 2.6 1.62 0.6 0.9 0.118 0.049 0.094 0.197 0.087 0.056 0.018 0.027 0.134 0.055 0.106 0.203 0.102 0.064 0.024 0.035 3.6 φ E B Max. 0.398 0.264 0.373 0.524 0.055 0.142 H A φ I F C M L G 1 D 2 1. Base 2. Collector 3. Emitter 3 J N K 6/6 O