Preliminary SGA-3586 Product Description DC-5000 MHz Silicon Germanium Cascadeable Gain Block Sirenza Microdevices’ SGA-3586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 35mA , the SGA3586 typically provides +25 dBm output IP3, 25dB of gain, and +13.5 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Product Features • DC-5000 MHz Operation • Single Voltage Supply • High Gain: 25 dB typ. at 850 MHz • Low Current Draw: 35mA at 3.3V typ. • Low Noise Figure: 2.5 dB typ. at 1950 MHz Gain & Return Loss vs. Frequency VD= 3.3 V, ID= 35 mA (Typ.) 32 0 Gain (dB) 24 -10 IRL 16 -20 ORL 8 -30 0 Return Loss (dB) GAIN Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite -40 0 1 2 3 4 5 6 Frequency (GHz) Symbol G Parameter Small Si gnal Gai n U nits Frequency Min. Typ. Max. dB 850 MHz 1950 MHz 2400 MHz 22.5 18.0 25.0 20.0 18.5 27.5 22.0 P 1dB Output Power at 1dB C ompressi on dB m 850 MHz 1950 MHz 11.5 13.5 13.5 OIP3 Output Thi rd Order Intercept Poi nt dB m 850 MHz 1950 MHz 23.5 25.0 26.0 Bandwi dth D etermi ned by Return Loss (>10dB) IRL MHz 5000 Input Return Loss dB 1950 MHz 12.8 Output Return Loss dB 1950 MHz 19.0 NF Noi se Fi gure dB 1950 MHz 2.5 3.5 VD D evi ce Operati ng Voltage V 3.0 3.3 3.6 ID D evi ce Operati ng C urrent mA 31 35 39 ORL RTH, j-l Thermal Resi stance (juncti on to lead) Test Conditions: VS = 5 V RBIAS = 130 Ohms °C /W ID = 35 mA Typ. TL = 25ºC 97 OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101382 Rev C Preliminary Preliminary SGA-3586 DC-5000 MHz SiGe Amplifier Typical RF Performance at Key Operating Frequencies Symbol G Parameter Frequency (MHz) Frequency Frequency (MHz)(MHz) 850 1950 Unit 100 500 2400 3500 dB 28.2 27.1 25.0 20.0 18.5 14.8 23.5 25.0 26.0 26.5 Small Signal Gain OIP3 Output Third Order Intercept Point dB m P 1dB Output Power at 1dB Compression dB m 13.3 13.5 13.5 13.2 IRL Input Return Loss dB 28.4 12.8 10.7 10.5 11.1 10.6 ORL Output Return Loss dB 31.5 17.1 15.9 20.5 20.3 18.9 S 12 Reverse Isolation dB 29.4 29.0 28.1 24.1 22.4 19.2 NF Noise Figure 2.4 2.5 2.5 2.5 dB VSS== 88 V V V = 130Ohms Ohms RBIAS R = 39 BIAS Test Conditions: 35 mA mA Typ. Typ. IIDD == 80 25ºC TTLL == 25ºC OIP33 Tone Tone Spacing Spacing == 11 MHz, MHz, Pout Pout per per tone tone == 0-5dBm dBm OIP 50 Ohms Ohms ZZSS== ZZLL== 50 Absolute Maximum Ratings Noise Figure vs. Frequency VD= 3.3 V, ID= 35 mA (Typ.) Noise Figure (dB) 5 Absolute Limit Max. Device Current (ID) 70 mA Max. Device Voltage (VD) 5V Max. RF Input Power +18 dBm 4 Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C 3 2 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. 1 TL=+25ºC 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency P1dB vs. Frequency VD=3.3 V, ID= 35 mA (Typ.) VD= 3.3 V, ID= 35 mA (Typ.) 35 18 30 15 P1dB (dBm) OIP3 (dBm) Parameter 25 12 9 20 TL=+25ºC TL=+25ºC 15 6 0 0.5 1 1.5 2 Frequency (GHz) 522 Almanor Ave., Sunnyvale, CA 94085 2.5 3 0 Phone: (800) SMI-MMIC 2 0.5 1 1.5 2 Frequency (GHz) 2.5 3 http://www.sirenza.com EDS-101382 Rev C Preliminary Preliminary SGA-3586 DC-5000 MHz SiGe Amplifier Typical RF Performance Over Temperature ( Bias: VD= 3.3 V, ID= 35 mA (Typ.) |S | vs. Frequency |S | vs. Frequency 11 32 0 24 -10 S21(dB) S21(dB) 21 16 8 0 -20 -30 +25°C -40°C +85°C TL +25°C -40°C +85°C TL -40 0 1 2 3 4 Frequency (GHz) 5 6 0 1 |S | vs. Frequency -15 -10 S21(dB) 0 -20 -25 -30 2 3 4 Frequency (GHz) 6 5 -20 -30 +25°C -40°C +85°C TL 1 5 22 -10 0 2 3 4 Frequency (GHz) |S | vs. Frequency 12 S21(dB) ) +25°C -40°C +85°C TL -40 6 0 1 2 3 4 Frequency (GHz) 5 6 NOTE: Full S-parameter data available at www.sirenza.com 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101382 Rev C Preliminary Preliminary SGA-3586 DC-5000 MHz SiGe Amplifier Basic Application Circuit Application Circuit Element Values RBIAS VS 1 uF Frequency (Mhz) 1000 pF Reference Designator 500 850 1950 2400 3500 CD LC CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH 4 1 SGA-3586 3 RF in RF out CB 2 CB VS Recommended Bias Resistor Values for ID=35mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) 5V RBIAS 51 8V 130 10 V 180 12 V 240 Note: RBIAS provides DC bias stability over temperature. 1 uF RBIAS 1000 pF Mounting Instructions CD A35 LC 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. CB CB 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking The part will be marked with an “A35” designator on the top surface of the package. 3 4 A35 2 Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. 1 Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 Description Part Number Reel Size Devices/Reel SGA-3586 13" 3000 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101382 Rev C Preliminary Preliminary SGA-3586 DC-5000 MHz SiGe Amplifier PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101382 Rev C