Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 8V and 250mA. The +46 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. They are well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers. Adequate heat sinking must be provided for this part to avoid exceeding the maximum junction temperature. Methods include the use of screws near the device, and filled vias beneath the part to the ground plane. Refer to “Mounting and Thermal Considerations” section on page 7 for more information. Maximum Available Gain vs Frequency Vds = 8V, Idq = 250mA 30 25 GMax(dB) 20 15 Preliminary Preliminary SHF-0289 DC-3 GHz, 1.0 Watt GaAs HFET Product Features • Patented GaAs Heterostructure FET Technology • +30dBm Output Power at 1dB Compression • +46dBm Output IP3 • High Drain Efficiency: Up to 40% at Class AB • 13 dB Gain at 900MHz (Application circuit) • 13 dB Gain at 1900MHz (Application circuit) Applications • Analog and Digital Wireless System • Cellular PCS, CDPD, Wireless Data, Pagers 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Frequency (GHz) Electrical Specifications at Ta = 25o C Symbol Parameters: Test Conditions Units Min. Typ. Insertion Power Gain Vds = 8.0V, I dq= 250mA, ZS=ZL=50 Ohms f = 0.9 GHz f = 1.9 GHz dB 17.7 12.5 Gmax Maximum Available Gain Vds = 8.0V, I dq= 250mA, ZS=ZS OPT, ZL=ZL OPT f = 0.9 GHz f = 1.9 GHz dB 23 20 TOIP Output Third Order Intercept Point (Device is tuned for maximum power output) f = 0.9 GHz f = 1.9 GHz dB m dB m 46 46 |S21| 2 I D ss Saturated Drain Current Vds = 3.0V, Vgs= 0V mA 650 Gm Tranconductance: Vds = 3.0V, Vgs = 0V mS 375 Vp Pinch-Off Voltage: Vds = 2.0V, I d = 1.2mA V -2.7 -1.9 Max. -1.0 V bgs Gate-to-Source Breakdown Voltage, Igs = 2.4mA V -22 -17 V bgd Gate-to-Drain Breakdown Voltage, Igd = 2.4mA V -22 -17 Rth Thermal Resistance, junction-to-lead C/W 37 o The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101241 Rev A Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET Absolute Maximum Ratings Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. Absolute Maximum Parameter Symbol Drain-to-Source Voltage V DS +12V Gate-to-Source Voltage VGS -5V to 0V Operating Temperature TOP -45 C to +85° C RF Input Power PIN 200 mW Channel Temperature TCH +175° C Storage Temperature TSTG -65 to +175° C Plot of ID vs. VDS for VGS= -2.2V to 0V 0.7 VGS = 0 V 0.6 VGS = - 0.2 V 0.5 VGS = - 0.4 V VGS = - 0.6 V ID(amps) 0.4 VGS = - 0.8 V 0.3 VGS = - 1.0 V VGS = - 1.2 V 0.2 VGS = -1.4 V 0.1 VGS = -1.6 V VGS = -1.8 V VGS = -2.0 V 0 0 1 2 VGS = -2.2 V 3 4 5 6 7 8 VDS (Volts) NOTE: I/V curves were taken using pulse sampling techniques. This results in low duty cycle currents through the device and therefore very low power levels. It is not recommended that these measurements be taken in d.c. mode, as excessive current could result in damage to the device. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101241 Rev A Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET |S21| & |S12| vs. Frequency 25 S12 20 dB -28 15 -31 S21 10 -34 5 -37 S12 (dB) S21 (dB) -25 GHz 0 -40 0 1 2 3 4 5 Frequency (GHz) S11 & S22 vs. Frequency (.05 to 4.5 GHz) Typical s-parameters at 25° C (Vds = 8V, Idq = 250mA) Freq GHz |S11| S11 Ang S 21 d B |S21| S21 Ang S 12 d B |S12| S12 Ang |S22| S22 Ang 0.05 0.98 -27.9 23.2 14.4 162.5 -36.5 0.02 72.4 0.20 -47.6 0.1 0.98 -33.9 22.9 14.0 158.5 -35.6 0.02 69.0 0.20 -52.3 0.3 0.95 -58.0 21.8 12.3 142.8 -32.6 0.02 55.0 0.23 -71.3 0.5 0.91 -82.2 20.5 10.6 127.1 -30.4 0.03 41.0 0.25 -90.2 -108.5 0.7 0.88 -104.2 19.1 9.0 112.6 -29.0 0.04 28.4 0.27 0.9 0.86 -121.5 17.7 7.7 100.6 -28.2 0.04 18.4 0.28 -121.5 1.1 0.85 -135.4 16.5 6.7 90.3 -27.8 0.04 10.2 0.30 -131.5 -139.6 1.3 0.85 -146.9 15.3 5.8 81.3 -27.6 0.04 3.0 0.31 1.5 0.84 -156.8 14.3 5.2 72.9 -27.5 0.04 -3.2 0.32 -146.8 1.7 0.84 -165.4 13.3 4.6 65.2 -27.5 0.04 -8.8 0.33 -153.2 1.9 0.84 -173.1 12.5 4.2 57.9 -27.5 0.04 -14.1 0.34 -159.7 2.1 0.84 179.9 11.6 3.8 50.8 -27.6 0.04 -18.7 0.35 -165.6 2.3 0.84 173.8 10.8 3.5 44.2 -27.8 0.04 -23.2 0.36 -171.7 2.5 0.84 167.6 9.8 3.1 37.8 -28.2 0.04 -27.2 0.40 -176.2 3.0 0.85 154.3 8.2 2.6 22.9 -28.7 0.04 -35.8 0.43 174.6 3.5 0.81 144.5 6.3 2.1 9.3 -29.7 0.03 -43.7 0.50 164.2 4.0 0.77 134.6 4.0 1.6 -4.3 -30.9 0.03 -51.5 0.56 153.9 4.5 0.73 124.8 0.9 1.1 -17.9 -32.2 0.02 -59.4 0.62 143.5 No external matching, scattering parameters de-embedded on test fixture to device lead at package edge. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101241 Rev A Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET 900 MHz Application Circuit at 25° C (Vds=8V, Idq=250mA) Microstrip Segment Specifications Ref. desig. Value Part N umber /Style Ref. desig. Value Cd1,7 220 pF RO HM MCH18 series Z1 50 ohms, 6.0 deg. @ 900 MHz Cd2,6,8,12 18 pF RO HM MCH18 series Z2 50 ohms, 2.7 deg. @ 900 MHz Cd3,10 10 0 0 p F RO HM MCH18 series Z3 50 ohms, 8.5 deg. @ 900 MHz C d4,9 100 pF RO HM MCH18 series Z4 50 ohms, 3.8 deg. @ 900 MHz Cd5,11 0.1 uF TAN TALUM, size"A", 35 volt Z5 50 ohms, 3.4 deg. @ 900 MHz CM1 3.3 pF RO HM MCH18 series Z6 50 ohms, 2.2 deg. @ 900 MHz CM2 3.9 pF RO HM MCH18 series Z7 50 ohms, 6.0 deg. @ 900 MHz LM1 5.6 nH TO K O LL1608- FH5N 6K Z8 50 ohms, 2.7 deg. @ 900 MHz LM2 4.7 nH TO K O LL1608- FH4N 7K Lbias1 39 nH TO K O LL1608- FH39N T Lbias2 82 nH TO K O LL1608- FH82N T Rstab1,2 20 ohms size 0603 Phase shift functional block between compo- nents are calculated based on wavelength of 900 MHz signal on FR4 board material with dielectric constant of 4.1, microstrip width and height dimensions of W=.054 inch and h= .031 inch. Test Data @ 0.9 GHz P1dB(dBm) IP3(dBm) 30.5 46.0 Output tone Level (dBm) 15 ς Ω 20 10 10 15 Pin (dBm) 20 350 0 270 15 T=25°C 20 25 30 35 1 .0 1 .1 T=25°C S21 15 S11 0 .9 S21& S12vs. Frequency 18 S22 0 .8 430 D r a in E ffic ie n c y Pout (dBm) S11 & S22 vs. Frequency 0 .7 510 ID 20 S21 (dB) S11, S22 (dB) 0 -5 -1 0 -1 5 -2 0 -2 5 -3 0 5 40 T=25°C ID (mA) 30 0 Drain Efficiency & ID vs. Pout 60 Efficiency (%) Pout (dBm) T=25°C -2 9 S12 12 -2 6 -3 2 9 -3 5 6 -3 8 0 .7 0 .8 0 .9 1 .0 S12 (dB) Pout vs. Pin 40 1 .1 Frequency GHz Frequency GHz Note: s-parameters determined using applications circuit shown above 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101241 Rev A Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET 1.9 GHz Application Circuit at 25° C (Vds=8V, Idq=250mA) Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value C d1 220 pF ROHM MCH18 series Z1 50 ohms, 5.5 deg. @ 1900 MHz C d2,3,6,7,8 33 pF ROHM MCH18 series Z2 50 ohms, 17.9 deg. @ 1900 MHz C d9 1000 pF ROHM MCH18 series C d4 100 pF ROHM MCH18 series Z3 50 ohms, 5.5 deg. @ 1900 MHz Cd10 0.1 uF TANTALUM, size"A", 35 volt Z4 50 ohms, 27 deg. @ 1900 MHz C d5 10 uF TANTALUM, size"A", 35 volt Z5 50 ohms, 5.8 deg. @ 1900 MHz CM1 2.7 pF ROHM MCH18 series CM2 2.2 pF ROHM MCH18 series Lbias1 10 nH TOKO LL1608- FH10NT Lbias2 22 nH TOKO LL1608- FH22NT Rstab1 5.1 ohms size 0603 Rstab2 20 ohms size 0603 Phase shift functional block between components are calculated based on wavelength of 1900 MHz signal on FR4 board material with dielectric constant of 4.1, microstrip width and height dimensions of W=.054 inch and h= .031 inch. Test Data @ 1.9 GHz P1dB(dBm) IP3(dBm) 30.5 46.0 Output tone Level (dBm) 15 ς Ω 30 20 Drain Efficiency & IDvs. Pout 0 5 10 430 20 ID 20 T=25oC S11 & S22 vs. Frequency 1 .9 35 2 .1 Frequency GHz 12 -2 6 -2 9 S12 -3 2 9 -3 5 6 -3 8 1 .5 2 .3 T=25oC S21 15 S11 1 .7 30 S21 & S12 vs. Frequency 18 S22 1 .5 25 270 Pout(dBm) S21 (dB) S11, S22 (dB) Pin (dBm) 0 -5 -1 0 -1 5 -2 0 -2 5 -3 0 350 D r a in E f fic ie n c y 15 20 15 510 40 0 10 T=25οC ID (mA) 60 Efficiency (%) Pout (dBm) 40 T=25οC 1 .7 1 .9 2 .1 Frequency GHz S12 (dB) Pout vs. Pin 2 .3 Note: s-parameters determined using applications circuit shown above 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101241 Rev A Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET ° 2.45 GHz Application Circuit at 25 C (Vds=8V, Idq=250mA) Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value C d2,5 5.6 pF ROHM MCH18 series Z1 50 ohms, 7.3 deg. @ 2450 MHz Cd1,3,6,7,8 22 pF ROHM MCH18 series Z2 50 ohms, 12.7 deg. @ 2450 MHz C d9 1000 pF ROHM MCH18 series Z3 50 ohms, 10.3 deg. @ 2450 MHz C d4 100 pF ROHM MCH18 series Z4 50 ohms, 10.3 deg. @ 2450 MHz C d 10 0.1 uF TANTALUM, size"A", 35 volt Z5 50 ohms, 15.8 deg. @ 2450 MHz CM1 1. 5 p F ROHM MCH18 series Z6 50 ohms, 18.9 deg. @ 2450 MHz CM2 1.2 pF ROHM MCH18 series Z7 50 ohms, 7.1 deg. @ 2450 MHz Lbias1 15 nH TOKO LL1608- FH15NT Lbias2 15 nH TOKO LL1608- FH15NT Rstab1 5.1 ohms size 0603 Rstab2 10 ohms size 0603 Phase shift functional block between components are calculated based on wavelength of 2450 MHz signal on FR4 board material with dielectric constant of 4.1, microstrip width and height dimensions of W=.054 inch and h= .031 inch. Test Data @ 2.45 GHz P1dB(dBm) IP3(dBm) Output tone Level (dBm) 31.0 44.5 15 ς Ω 20 510 40 20 0 5 10 15 20 270 10 25 15 S11 & S22 vs. Frequency 1 .9 5 20 25 30 T=25oC 18 S22 S11 & S22 vs. Frequency T=25oC S21 (dB) S12 12 S21 9 2 .4 5 2 .7 2 .9 5 1 .9 5 -3 2 -3 5 -3 8 6 Frequency GHz -2 6 -2 9 15 S11 2 .2 35 Pout (dBm) Pin (dBm) S11, S22 (dB) 350 ID 0 10 0 -5 -1 0 -1 5 -2 0 -2 5 -3 0 430 D r a in E ffic ie n c y ID (mA) 30 T=25oC Drain Efficiency & ID vs. Pout 60 Efficiency (%) Pout (dBm) 40 T=25oC S12 (dB) Pout vs. Pin 2 .2 2 .4 5 2 .7 2 .9 5 Frequency GHz Note: s-parameters determined using applications circuit shown above 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101241 Rev A Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Devices Per R eel Reel Siz e SHF-0289 1000 7" Mounting and Thermal Considerations: Part Symbolization The part will be symbolized with a “H2” designator on the top surface of the package. It is very important that adequate heat sinking be provided to avoid exceeding the maximum device junction temperature. All of the following suggestions should be followed to ensure maximum operating life of the device: Pin D esignation 1. Use 2 ounce copper if possible. 2. Use a large ground pad area with many plated throughholes (solder filling is recommended). 3. Multiple filled vias are required directly below the SOT89 ground tab. 4. Solder the copper pad on the backside of the device package to the ground plane. 5. Use three point board seating with 2-56 machine screws (no more than 0.2 inch from the device) to provide a low thermal resistance path to the plate. The thermal resistance from ground lead to screws is 2 deg. C/W 6. We recommend thermal transfer paste be used between the board and the mounting plate. 1 Gate 2 Source 3 D rai n 4 Source Outline Drawing 1 H2 2 4 3 H2 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-101241 Rev A Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET Component Tape and Reel Packaging Tape Dimensions For 89 Outline C avi ty Length Wi dth D epth Pi tch Bottom Hole D i ameter A B K P1 D1 Siz e (mm)leel 4.91 +/- 0.01 4.52 +/- 0.01 1.90 +/- 0.01 8.00 +/- 0.01 1.60 +/- 0.10 Perforati on D i ameter Pi tch Posi ti on D0 P0 E 1.55 +/- 0.05 4.00 +/- 0.01 1.75 +/- 0.01 C over Tape Wi dth Tape Thi ckness C t 9.10 +/- 0.25 0.05 +/- 0.01 C arri er Tape Wi dth Thi ckness W T 12.0 +/- 0.03 0.30 +/- 0.05 D i stance C avi ty to Perforati on (Wi dth D i recti on) C avi ty to Perforati on (Length D i recti on) F 5.50 +/- 0.10 P2 2.00 +/- 0.10 D escription Symbol Note: Drawing not to scale 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 8 http://www.stanfordmicro.com EDS-101241 Rev A