Preliminary Preliminary SNA-686 Product Description Sirenza Microdevices SNA-686 is a GaAs HBT MMIC Amplifier housed in a low-cost, surface-mountable plastic package. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. DC-6 GHz, Cascadable GaAs HBT MMIC Amplifier Not Recommended for New Designs See Application Note AN-019 for Alternates The use of an external resistor allows for bias flexibility and stability. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Also available in chip form (SNA-600), its small size (0.38mm x 0.38mm) and gold metallization make it an ideal choice for use in hybrid circuits. Gain & Return Loss vs. Frequency (ID=65mA, TLEAD=+25°C) 0 12 -6 8 -12 -18 4 Gain Input Return Loss Output Return Loss 0 0 1 2 3 4 Frequency (GHz) Sy mbol 5 6 Applications Cellular, PCS, CDPD, Wireless Data, SONET -24 7 Frequency Units Min. Ty p. Output Pow er at 1dB Compression 850 M Hz 1950 M Hz 2400 M Hz dBm dBm dBm 15.7 17.6 17.7 17.4 IP3 Third Order Intercept Point 850 M Hz 1950 M Hz 2400 M Hz dBm dBm dBm 29.1 34.0 32.1 30.0 S21 Small Signal Gain 850 M Hz 1950 M Hz 2400 M Hz dB dB dB P1dB Parameter Return Loss (dB) Gain (dB) 16 Product Features Patented GaAs HBT Technology Cascadable 50 Ohm Gain Block 34 dBm Output IP3 @ 850 MHz Operates From Single Supply Low Cost Surface Mount Plastic Package 11.1 11.2 11.3 M Hz 6000 - 1.3:1 DC-6000 M Hz - 1.4:1 Reverse Isolation 850 M Hz 1950 M Hz 2400 M Hz dB dB dB 16.3 16.5 16.6 NF Noise Figure 1950 M Hz dB VD Device Operating Voltage ID Device Operating Current Bandw idth VSWRIN VSWROUT S12 RTH, j-l (Determined by S11, S22 Values) 10.0 10.1 Input VSWR DC-6000 M Hz Output VSWR Thermal Resistance (junction - lead) Test Conditions: VS = 8 V RBIAS = 43 Ohms o ID = 65 mA Typ. TL = 25ºC Max. 12.2 12.3 7.3 8.8 V 5.0 5.3 5.6 I 58 65 72 C/W 261 OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101398 Rev C Preliminary Preliminary SNA-686 DC-6GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Frequency (MHz) Sy mbol G Parameter Small Signal Gain Unit 100 500 850 1950 2400 3500 dB 11.1 11.1 11.1 11.2 11.3 11.3 35.0 34.0 32.1 30.0 OIP3 Output Third Order Intercept Point dBm P1dB Output Pow er at 1dB Compression dBm 17.5 17.6 17.7 17.4 IRL Input Return Loss dB 29.5 25.2 22.3 19.6 18.4 17.9 ORL Output Return Loss dB 16.0 15.9 15.3 17.8 19.6 22.2 S12 Reverse Isolation dB 16.2 16.2 16.3 16.5 16.6 17.0 NF Noise Figure dB 7.2 7.3 7.3 Test Conditions: VS = 8v RBIAS = 43 Ohms ID = 65mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Parameter Absolute Limit Max. D evi ce C urrent (ID) 120 mA Max. D evi ce Voltage (VD) 7V Max. RF Input Power +16 dBm Max. Juncti on Temp. (TJ) +175°C Operati ng Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Absolute Maximum R atings Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page one. Bi as C ondi ti ons should also sati sfy the followi ng expressi on: IDVD < (TJ - TL) / RTH, j-l NOTE: While the SNA-686 can be operated at different bias currents, 65 mA is the recommended bias for lower junction temperature and longer life. This reflects typical operating conditions which we have found to be an optimal balance between high IP3 and MTTF. In general, MTTF is improved to more than 100,000 hours when biasing at 65 mA and operating up to 85°C ambient temperature. Junction Temperature vs. Dissipated Power MTTF vs. Dissipated Power 260 1.E+08 240 1.E+07 230 MTTF (hrs) Junction Temperature (°C) 250 220 210 200 TJmax 190 85°C lead temp 1.E+06 1.E+05 85°C lead temp 180 1.E+04 170 160 1.E+03 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.3 Dissipated Power (W) 522 Almanor Ave., Sunnyvale, CA 94085 0.35 0.4 0.45 0.5 0.55 0.6 Dissipated Power (W) Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101398 Rev C Preliminary Preliminary SNA-686 DC-6GHz Cascadable MMIC Amplifier Typical RF Performance (VDS = 5.3V, IDS = 65mA, TLEAD=25° C) Gain & Isolation vs. Frequency Return Loss vs. Frequency 16 0 Gain Isolation -5 8 -10 GHz 4 Isolation (dB) -5 Return Loss (dB) Gain (dB) 12 0 -10 -15 -20 -15 Input Return Loss -25 0 -20 0 1 2 3 4 5 6 Output Return Loss -30 7 0 1 2 3 Frequency (GHz) Output IP3 vs. Frequency 5 6 7 P1dB vs. Frequency 39 21 36 18 33 15 P1dB (dBm) OIP3 (dBm) 4 Frequency (GHz) 30 27 24 12 9 6 21 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.5 1.0 1.5 Frequency (GHz) 2.0 2.5 3.0 3.5 Frequency (MHz) Noise Figure vs. Frequency 8.0 7.5 NF (dB) 7.0 6.5 6.0 5.5 5.0 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 Frequency (GHz) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101398 Rev C Preliminary Preliminary SNA-686 DC-6GHz Cascadable MMIC Amplifier Application Circuit Element Values Typical Application Circuit R BIAS 1 uF LC 1 RF in 500 850 CD 1000 pF 4 SNA-686 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH Recommended Bias Resistor Values for ID=65mA RBIAS=( VS-VD ) / ID 3 RF out CB 2 CB Frequency (Mhz) Reference Designator Supply Voltage(VS) 8V RBIAS 43 9V 56 12 V 100 15 V 150 Note: RBIAS provides DC bias stability over temperature. VS 1 uF RBIAS 1000 pF LC Mounting Instructions CD S6 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. CB CB 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking The part will be marked with an S6 designator on the top surface of the package. 3 4 S6 2 Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance. 3 1 Description RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 Pin # Part Number Reel Size Devices/Reel SNA-686 7" 1000 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101398 Rev C Preliminary Preliminary SNA-686 DC-6GHz Cascadable MMIC Amplifier PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101398 Rev C