ETC SS115

SS115
1.0 AMP. Surface Mount Schottky Barrier Rectifiers
Voltage Range
150 Volts
Current
1.0 Ampere
SMA/DO-214AC
Features
a
a
a
a
a
a
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-O
a Epitaxial construction
a High temperature soldering:
o
260 C/ 10 seconds at terminals
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
.091(2.30)
.078(1.99)
Mechanical Data
a
a
a
a
a
.062(1.58)
.050(1.27)
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.064 gram
.056(1.41)
.035(0.90)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
.210(5.33)
.195(4.95)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TL (See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
O
(Note 1)
@ 25 C
1.0A
O
@ 125 C 1.0A
O
@ 25 C 2.0A
O
@ 125 C 2.0A
Maximum DC Reverse Current
@ TA =25 at
Rated DC Blocking Voltage @ TA=125
SS115
Units
VRRM
VRMS
VDC
150
105
150
V
V
V
I(AV)
1.0
A
IFSM
30
A
VF
IR
Typical Junction Capacitance (Note 3)
Cj
Typical Thermal Resistance ( Note 2 )
RJL
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
0.82
0.67
0.89
0.75
0.05
0.5
50
20
-65 to +150
-65 to +150
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2 x 0.2”(5.0 x 5.0mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C
- 908 -
V
mA
mA
pF
/W
RATINGS AND CHARACTERISTIC CURVES (SS115)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
RESISTIVE OR
INDUCTIVE LOAD
.50
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
1.0
AT RATED TL
8.3ms Single Half Sine Wave
JEDEC Method
40
30
20
10
0
50
60
70
80
90
100
110
120
130
140
150
160
1
170
10
o
LEAD TEMPERATURE. ( C)
100
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
100
50
INSTANTANEOUS REVERSE CURRENT. (mA)
INSTANTANEOUS FORWARD CURRENT. (A)
Tj=125 0C
10.0
1
Tj=25 0C
0.1
PULSE WIDTH=300 S
1% DUTY CYCLE
0.01
.2
.4
.6
.8
1.0
1.2
1.4
1.6
1
0.1
Tj=25 0C
0.01
FIG.5- TYPICAL JUNCTION CAPACITANCE
400
Tj=25 0C
f=1.0MHz
Vsig=50mVp-p
100
.1
1.0
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
JUNCTION CAPACITANCE.(pF)
Tj=125 0C
0.001
0
10
10
10
100
REVERSE VOLTAGE. (V)
- 21 -
140