SHENZHEN ICHN ELECTRONICS TECH. CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 9012LT1 2. EMITTER TRANSISTOR（ PNP ） 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test ０．９５ ０．４ ０．９５ １．９ ２．９ ２．４ １．３ conditions Collector-base breakdown voltage V(BR)CBO Ic= -100μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO MIN Unit : mm TYP MAX UNIT -40 V Ic= -1mA， IB=0 -25 V IE=-100μA， IC=0 -5 V IE=0 Collector cut-off current ICBO VCB=-40 V , IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V , IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V , -0.1 μA hFE(1) VCE=-1V, IC= -50m A 120 hFE(2) VCE=-1V, IC=-500mA 40 IC=0 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50m A -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500 mA, IB= -50m A -1.2 V Transition frequency CLASSIFICATION OF hFE(1) Ｒａｎｋ Ｒａｎｇｅ fT VCE=-6V, IC= -20mA f=30MHz 150 MHz Ｌ Ｈ １２０－２００ ２００－３５０ DEVICE MARKING: 9012LT1=2T1 HTTP: WWW. SZXC. COM. CN