ETC BUZ50A

PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com
TYPE: BUZ50A
CASE OUTLINE: TO-220AB
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage
Drain – Gate Voltage
Drain Current – Continuous
Drain Current – Pulsed
Gate – Source Voltage
Power Dissipation
Inductive Current
Operating and Storage Temperature
Lead Temperature From Case
VDSS
VDGR
ID
IDM
VGS
PD
IL
TJ & Tstg
TL
ELECTRICAL CHARACTERISTICS TA @ 25°°C
Parameters
Symbol
Test Conditions
Drain Source
BVDSS VGS = 0V, ID = .25mA
Breakdown Voltage
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1.0mA
1000
1000
2.5
10
±20
75
Vdc
Vdc
Adc
Adc
Vdc
Watts
Adc
°C
°C
-55 to +150
Min
1000
2.1
Typ
Max
Unit
Vdc
4.0
Vdc
Gate – Body Leakage
Current
Zero Gate Voltage
Drain Current
On State Drain Current
IGSS
VGS = ± 20V, VDS = 0V
100
nA
IDSS
VDS = 1000V, VGS = 0V,
VDS = 1000V, VGS = 0V, TJ = 125°C
0.25
1.0
mA
mA
Adc
Drain Source OnResistance
Forward
Transconductance
Drain-Source On
Voltage
Drain-Source-On
Voltage
Input Capacitance
rDS(on)
VGS = 10V, ID = 1.5A
5.0
Ohms
gFS
VDS = 25V, ID = 1.5A
Output Capacitance
Coss
Reverse Transfer
Capacitance
Crss
ID(on)
0.7
mhos
VDS(on)
Vdc
VDS(on)
Vdc
Ciss
VGS = 0V, VDS = 25V, f = 1 MHz
2100
pF
120
pF
50
pF
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TYPE: BUZ50A
Drain Source Diode Characteristics
Forward On Voltage
IF = 5.0A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
IF = 2.5A
diF /dt = 100A/µs, VGS = 0V
VR = 100V
Symbol
VSD
Min
Typ
Max
1.3
Units
Vdc
trr
2000
ns
Qrr
15
µC
Total Gate Charge
Qg
nC
Gate – Source Charge
Qgs
nC
Gate – Drain Charge
Qgd
nC
Turn-On Time
Switching Characteristics
Symbol
ton
Turn-Off Time
toff
Delay Time (Turn On)
VDD = 30V, ID = 2.0A
VGS = 10V, RGS = 50Ω
Rgen = 50Ω
Rise Time
Delay Time (Turn Off)
Fall Time
Thermal Characteristics
Junction To Case
Junction To Ambient
Internal Package Inductance
Internal Drain Inductance
Internal Source Inductance
Min
Typ
Max
Units
td(on)
45
ns
tr
60
ns
td(off)
140
ns
tf
80
ns
Symbol
RθJC
Units
°C/W
RθJA
°C/W
Symbol
Ld
Typ
4.5
Ls
7.5
Max
Units
nH
nH
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