SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 MARCH 94 FEATURES * 60 Volt VCEO FMMT2484 ✪ E C PARTMARKING DETAIL 4G B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 200 mA Continuous Collector Current IC 50 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO MIN. 60 V(BR)CEO V(BR)EBO UNIT V CONDITIONS. IC=10µA, IE=0 60 V IC=10mA, IB=0* 6 V IE=10µA, IC=0 nA VCB=45V, IE=0 VCB=45V, IE=0, Tamb=150°C VBE=5V IC=1mA, IB=100µA* ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Voltage Static Forward Current Transfer Ratio IEBO VCE(sat) Output Capacitance Input Capacitance Noise Figure Cobo Cibo N VBE hFE 30 100 20 175 200 250 MAX. 10 10 10 0.35 nA V 0.95 V µA 500 800 6 6 3 pF pF dB 3 dB IC=1mA, VCE=5V* IC=1µA, VCE=5V* IC=10µA, VCE=5V* IC=10µA, VCE=5V, Tamb=55°C IC=100µA, VCE=5V* IC=500µA, VCE=5V* IC=1mA, VCE=5V* IC=10mA, VCE=5V* VCB=5V, IE=0, f=140KHz VBE=0.5V, IE=0, f=140KHz IC=200µA, VCE=5V, Rg=2kΩ f=1kHz, f=200Hz IC=200µA, VCE=5V, Rg=2kΩ f=30Hz to 15kHz at -3dB points *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%