MICRONAS Edition Aug. 30, 2000 6251-465-3DS HAL525, HAL535 Hall Effect Sensor IC MICRONAS HAL525, HAL535 Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability 5 2. Functional Description 6 6 6 6 7 7 8 9 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Overview 14 14 16 4. 4.1. 4.2. Type Description HAL525 HAL535 18 18 18 18 18 5. 5.1. 5.2. 5.3. 5.4. Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC and ESD 20 6. Data Sheet History 2 Micronas HAL525, HAL535 Hall Effect Sensor Family 1.2. Family Overview Release Note: Revision bars indicate significant changes to the previous edition. Both sensors have a latching behavior with typically the same sensitivity. The difference between HAL 525 and HAL535 is the temperature coefficient of the magnetic switching points. 1. Introduction The HAL525 and HAL535 are Hall switches produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. In addition, the magnetic characteristics are constant in the full supply voltage and temperature range. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from −40 °C up to 150 °C. Type Switching Behavior Typical Temperature Coefficient see Page 525 latching −2000 ppm/K 14 535 latching −1000 ppm/K 16 Latching Sensors: Both sensors have a latching behavior and requires a magnetic north and south pole for correct functioning. The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. The HAL525 and HAL535 are available in the SMD-package SOT-89B and in the leaded version TO-92UA. 1.1. Features – switching offset compensation at typically 115 kHz – operates from 3.8 V to 24 V supply voltage – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – overvoltage protection at all pins – reverse-voltage protection at VDD-pin – magnetic characteristics are robust against mechanical stress effects – short-circuit protected open-drain output by thermal shut down – constant switching points over a wide supply voltage range – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics – ideal sensor for window lifter, ignition timing, and revolution counting in extreme automotive and industrial environments – EMC corresponding to DIN 40839 Micronas 3 HAL525, HAL535 1.3. Marking Code 1.6. Solderability All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. all packages: according to IEC68-2-58 Type During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Temperature Range A K E HAL525 525A 525K 525E HAL535 535A 535K 535E Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 °C and 90% relative humidity. 1 VDD 3 OUT 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = −40 °C to +170 °C 2 GND Fig. 1–1: Pin configuration K: TJ = −40 °C to +140 °C E: TJ = −40 °C to +100 °C The relationship between ambient temperature (TA) and junction temperature is explained in Section 5.1. on page 18. 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, K, or E Package: SF for SOT-89B UA for TO-92UA Type: 525 or 535 Example: HAL525UA-E → Type: 525 → Package: TO-92UA → Temperature Range: TJ = −40 °C to +100 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for Hall Sensors”. 4 Micronas HAL525, HAL535 2. Functional Description The Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. 1 VDD Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hysteresis Control Short Circuit and Overvoltage Protection Hall Plate Comparator 3 Switch Output OUT Clock 2 GND Fig. 2–1: HAL525, HAL535 block diagram fosc t B BON Shunt protection devices clamp voltage peaks at the Output-pin and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to −15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to −15 V. t VOUT VOH VOL t IDD 1/fosc = 9 µs tf t Fig. 2–2: Timing diagram Micronas 5 HAL525, HAL535 3. Specifications 3.1. Outline Dimensions sensitive area 4.55 0.15 ∅ 0.2 1.7 0.3 sensitive area 4.06 ±0.1 1.5 ∅ 0.4 0.3 y y 2 3.05 ±0.1 4 ±0.2 0.48 top view 1 3 0.4 0.55 1 2 3 0.4 0.75 ±0.2 1.15 2 3.1 ±0.2 2.55 min. 0.25 0.36 0.4 14.0 min. 1.5 0.42 3.0 1.27 1.27 branded side 2.54 0.06 ±0.04 branded side SPGS0022-5-A3/2E Fig. 3–1: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm 3.2. Dimensions of Sensitive Area 45° 0.8 SPGS7002-9-A/2E Fig. 3–2: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm 0.25 mm × 0.12 mm Note: For all package diagrams, a mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given. 3.3. Positions of Sensitive Areas The improvement of the TO-92UA package with the reduced tolerances will be introduced end of 2001. 6 SOT-89B TO-92UA x center of the package center of the package y 0.95 mm nominal 1.0 mm nominal Micronas HAL525, HAL535 3.4. Absolute Maximum Ratings Symbol Parameter Pin Name Min. Max. Unit VDD Supply Voltage 1 −15 281) V −VP Test Voltage for Supply 1 −242) − V −IDD Reverse Supply Current 1 − 501) mA IDDZ Supply Current through Protection Device 1 −2003) 2003) mA VO Output Voltage 3 −0.3 281) V IO Continuous Output On Current 3 − 501) mA IOmax Peak Output On Current 3 − 2503) mA IOZ Output Current through Protection Device 3 −2003) 2003) mA TS Storage Temperature Range −65 150 °C TJ Junction Temperature Range −40 −40 150 1704) °C 1) 2) 3) 4) as long as TJmax is not exceeded with a 220 Ω series resistance at pin 1 corresponding to the test circuit (see Fig. 5–1) t<2 ms t<1000 h Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. Recommended Operating Conditions Symbol Parameter Pin Name Min. Max. Unit VDD Supply Voltage 1 3.8 24 V IO Continuous Output On Current 3 0 20 mA VO Output Voltage (output switched off) 3 0 24 V Micronas 7 HAL525, HAL535 3.6. Electrical Characteristics at TJ = −40 °C to +170 °C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions. Typical Characteristics for TJ = 25 °C and VDD = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions IDD Supply Current 1 2.3 3 4.2 mA TJ = 25 °C IDD Supply Current over Temperature Range 1 1.6 3 5.2 mA VDDZ Overvoltage Protection at Supply 1 − 28.5 32 V IDD = 25 mA, TJ = 25 °C, t = 20 ms VOZ Overvoltage Protection at Output 3 − 28 32 V IOH = 25 mA, TJ = 25 °C, t = 20 ms VOL Output Voltage 3 − 130 280 mV IOL = 20 mA, TJ = 25 °C VOL Output Voltage over Temperature Range 3 − 130 400 mV IOL = 20 mA IOH Output Leakage Current 3 − 0.06 0.1 µA Output switched off, TJ = 25 °C, VOH = 3.8 to 24 V IOH Output Leakage Current over Temperature Range 3 − − 10 µA Output switched off, TJ ≤150 °C, VOH = 3.8 to 24V fosc Internal Oscillator Chopper Frequency − 95 115 − kHz TJ = 25 °C, fosc Internal Oscillator Chopper Frequency over Temperature Range − 85 115 − kHz TJ = −30 °C to 100 °C fosc Internal Oscillator Chopper Frequency over Temperature Range − 73 115 − kHz ten(O) Enable Time of Output after Setting of VDD 1 − 30 70 µs VDD = 12 V B > BON + 2 mT or B < BOFF − 2 mT tr Output Rise Time 3 − 75 400 ns tf Output Fall Time 3 − 50 400 ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF RthJSB case SOT-89B Thermal Resistance Junction to Substrate Backside − − 150 200 K/W RthJA case TO-92UA Thermal Resistance Junction to Soldering Point − − 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5 mm, pad size (see Fig. 3–3) 5.0 2.0 2.0 1.0 Fig. 3–3: Recommended pad size SOT-89B Dimensions in mm 8 Micronas HAL525, HAL535 3.7. Magnetic Characteristics Overview at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter Switching Type TJ On point BON Off point BOFF Hysteresis BHYS Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 11.8 15.8 19.2 −19.2 −15.8 −11.8 27.4 31.6 35.8 mT HAL 525 −40 °C latching 25 °C 11 14 17 −17 −14 −11 24 28 32 mT 170 °C 5 8.5 13 −13 −8.5 −5 12 17 25 mT HAL 535 −40 °C 12 15 18 −18 −15 −12 25 30 35 mT latching 25 °C 11 13.8 17 −17 −13.8 −11 23 27.6 32 mT 170 °C 6 12 18 −18 −12 −6 17 24 31 mT Note: For detailed descriptions of the individual types, see pages 14 and following. Micronas 9 HAL525, HAL535 mA 25 mA 5 HAL 525, HAL 535 HAL 525, HAL 535 20 IDD IDD TA = –40 °C 15 4 TA = 25 °C TA = 170 °C 10 3 5 2 0 VDD = 3.8 V VDD = 12 V –5 VDD = 24 V 1 –10 –15 –15–10 –5 0 0 –50 5 10 15 20 25 30 35 V 0 50 100 VDD Fig. 3–6: Typical supply current versus ambient temperature kHz 160 HAL 525, HAL 535 4.5 IDD 200 °C TA Fig. 3–4: Typical supply current versus supply voltage mA 5.0 150 HAL 525, HAL 535 140 4.0 fosc TA = –40 °C 3.5 VDD = 4.5 V...24 V TA = 25 °C 100 3.0 TA = 100 °C 2.5 VDD = 3.8 V 120 80 TA = 170 °C 2.0 60 1.5 40 1.0 20 0.5 0 1 2 3 4 5 6 VDD Fig. 3–5: Typical supply current versus supply voltage 10 7 8 V 0 –50 0 50 100 150 200 °C TA Fig. 3–7: Typ. internal chopper frequency versus ambient temperature Micronas HAL525, HAL535 mV 400 mV 400 HAL 525, HAL 535 HAL 525, HAL 535 IO = 20 mA IO = 20 mA 350 VDD = 3.8 V VOL VOL VDD = 4.5 V 300 300 VDD = 24 V TA = 170 °C 250 TA = 100 °C 200 200 TA = 25 °C 150 TA = –40 °C 100 100 50 0 0 5 10 15 20 25 30 V 0 –50 0 50 100 VDD 200 °C TA Fig. 3–8: Typical output low voltage versus supply voltage mV 600 150 Fig. 3–10: Typical output low voltage versus ambient temperature HAL 525, HAL 535 A 104 HAL 525, HAL 535 IO = 20 mA 103 VOL 500 IOH 102 101 400 TA = 170 °C TA = 150 °C 100 300 10–1 TA = 170 °C TA = 100 °C 10–2 TA =100 °C 200 10–3 TA = 25 °C 10–4 TA = –40 °C 100 TA = 25 °C TA = –40 °C 10–5 0 3 4 5 6 VDD Fig. 3–9: Typical output low voltage versus supply voltage Micronas 7 V 10–6 15 20 25 30 35 V VOH Fig. 3–11: Typ. output high current versus output voltage 11 HAL525, HAL535 µA HAL 525, HAL 535 102 dBµV 80 HAL 525, HAL 535 VP = 12 V TA = 25 °C Quasi-PeakMeasurement test circuit 70 101 IOH VDD 60 100 50 max. spurious signals 10–1 10–2 40 VOH = 24 V 30 VOH = 3.8 V 10–3 20 10–4 10–5 –50 10 0 50 100 150 200 °C TA Fig. 3–12: Typical output leakage current versus ambient temperature dBµA 30 IDD 0 0.01 0.10 1.00 1 10.00 100.00 10 100 1000.00 1000 MHz f Fig. 3–14: Typ. spectrum of supply voltage HAL 525, HAL 535 VDD = 12 V TA = 25 °C Quasi-PeakMeasurement 20 max. spurious signals 10 0 –10 –20 –30 0.01 0.10 1.00 1 10.00 100.00 10 100 1000.00 1000 MHz f Fig. 3–13: Typ. spectrum of supply current 12 Micronas HAL525, HAL535 Micronas 13 HAL525 4. Type Description Applications 4.1. HAL525 The HAL525 is the optimal sensor for applications with alternating magnetic signals such as: The HAL525 is a latching sensor (see Fig. 4–1). – multipole magnet applications, The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. – rotating speed measurement, – commutation of brushless DC motors, and – window lifter. Output Voltage For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. VO BHYS Magnetic Features: VOL – switching type: latching BOFF – low sensitivity – typical BON: 14 mT at room temperature 0 B BON Fig. 4–1: Definition of magnetic switching points for the HAL525 – typical BOFF: −14 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −2000 ppm/K Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 11.8 15.8 19.2 −19.2 −15.8 −11.8 27.4 31.6 35.8 25 °C 11 14 17 −17 −14 −11 24 28 32 100 °C 8 11 15.5 −15.5 −11 −8 18.5 22 28.7 0 mT 140 °C 6.5 10 14 −14 −10 −6.5 16 20 26 0 mT 170 °C 5 8.5 13 −13 −8.5 −5 12 17 25 0 mT −40 °C Min. Typ. Unit Max. 0 −2 0 mT 2 mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 14 Micronas HAL525 mT 20 mT 20 HAL525 BONmax BON BON BOFF HAL525 15 BON BOFF 15 10 10 5 5 TA = –40 °C TA = 25 °C 0 VDD = 4.5 V...24 V TA = 170 °C –5 VDD = 3.8 V 0 TA = 100 °C BONtyp BONmin –5 BOFFmax BOFF –10 –10 –15 –15 BOFFtyp BOFFmin –20 0 5 10 15 20 25 30 V Fig. 4–2: Typ. magnetic switching points versus supply voltage HAL525 BON BON BOFF 0 50 100 150 200 °C TA, TJ VDD mT 20 –20 –50 Fig. 4–4: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus ambient temperature” the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 15 10 5 TA = –40 °C TA = 25 °C 0 TA = 100 °C TA = 170 °C –5 BOFF –10 –15 –20 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–3: Typ. magnetic switching points versus supply voltage Micronas 15 HAL535 4.2. HAL535 Applications The HAL535 is a latching sensor (see Fig. 4–5). The HAL535 is the optimal sensor for applications with alternating magnetic signals such as: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. – multipole magnet applications, – rotating speed measurement, – commutation of brushless DC motors, and – window lifter. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Output Voltage VO BHYS Magnetic Features: – switching type: latching VOL – low sensitivity – typical BON: 13.5 mT at room temperature BOFF – typical BOFF: −13.5 mT at room temperature 0 B BON Fig. 4–5: Definition of magnetic switching points for the HAL535 – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1000 ppm/K Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. −40 °C 12 15 18 −18 −15 −12 25 30 35 0 mT 25 °C 11 13.8 17 −17 −13.8 −11 23 27.6 32 0 mT 100 °C 9 13 17 −17 −13 −9 20 26 31.5 0 mT 140 °C 7 12.5 17 −17 −12.5 −7 18 25 31 0 mT 170 °C 6 12 18 −18 −12 −6 17 24 31 0 mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 16 Micronas HAL535 mT 20 HAL 535 HAL 535 BONmax BON BON 15 BOFF mT 20 BON 15 BOFF 10 10 5 5 BONtyp BONmin TA = –40 °C TA = 25 °C 0 VDD = 4.5 V... 24 V 0 TA = 100 °C TA = 170 °C –5 VDD = 3.8 V –5 BOFFmax BOFF –10 –10 BOFFtyp –15 –15 –20 –20 –50 BOFFmin 0 5 10 15 20 25 30 V 50 100 150 200 °C TA, TJ VDD Fig. 4–6: Typ. magnetic switching points versus supply voltage mT 20 0 HAL 535 Fig. 4–8: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus ambient temperature” the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BON BOFF 15 10 5 TA = –40 °C TA = 25 °C 0 TA = 100 °C TA = 170 °C –5 BOFF –10 –15 –20 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–7: Typ. magnetic switching points versus supply voltage Micronas 17 HAL525, HAL535 5. Application Notes 5.4. EMC and ESD 5.1. Ambient Temperature For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + ∆T At static conditions, the following equation is valid: ∆T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax − ∆T Applications with this arrangement passed the EMC tests according to the product standards DIN 40839). Note: The international standard ISO 7637 is similar to the used product standard DIN 40839. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. RV 220 Ω 1 RL VDD VEMC VP 1.2 kΩ OUT 3 4.7 nF 20 pF 5.2. Extended Operating Conditions 2 GND All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7). Fig. 5–1: Test circuit for EMC investigations Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V is not tested. For special test conditions, please contact Micronas. 5.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8). During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. 18 Micronas HAL525, HAL535 Micronas 19 HAL525, HAL535 6. Data Sheet History 1. Final data sheet: “HAL525 Hall Effect Sensor IC”, April 23, 1997, 6251-465-1DS. First release of the final data sheet. 2. Final data sheet: “HAL525 Hall Effect Sensor IC”, March 10, 1999, 6251-465-2DS. Second release of the final data sheet. Major changes: – additional package SOT-89B – outline dimensions for SOT-89A and TO-92UA changed – electrical characteristics changed – section 4.2.: Extended Operating Conditions added – section 4.3.: Start-up Behavior added 3. Final data sheet: “HAL525, HAL535 Hall Effect Sensor Family”, Aug. 30, 2000, 6251-465-3DS. Third release of the final data sheet. Major changes: – new sensor HAL 535 added – outline dimensions for SOT-89B: reduced tolerances – SMD package SOT-89A removed – temperature range "C" removed Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: [email protected] Internet: www.micronas.com Printed in Germany Order No. 6251-465-3DS 20 All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. Micronas HAL 11x, HAL 5xx, HAL 62x Data Sheet Supplement Subject: Improvement of SOT-89B Package Data Sheet Concerned: HAL 114, 115, 6251-456-2DS, Dec. 20, 1999 HAL 50x, 51x, 6251-485-1DS, Feb. 16, 1999 HAL 55x, 56x, 6251-425-1DS, April 6, 1999 HAL 621, 629, 6251-504-1DS, Feb. 3, 2000 Supplement: No. 1/ 6251-531-1DSS Edition: July 4, 2000 Changes: – position tolerance of the sensitive area reduced – tolerances of the outline dimensions reduced – thickness of the leadframe changed to 0.15 mm (old 0.125 mm) – SOT-89A will be discontinued in December 2000 sensitive area 4.55 0.15 ∅ 0.2 1.7 0.3 y 2 4 ±0.2 2.55 min. 0.25 top view 1 1.15 2 3 0.4 0.4 0.4 1.5 3.0 branded side 0.06 ±0.04 SPGS0022-5-A3/2E Position of sensitive area HAL 114, 115 HAL 50x, 51x HAL 621, 629 HAL 55x, HAL 56x x center of the package center of the package y 0.95 mm nominal 0.85 mm nominal Note: A mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given. Position tolerance of the sensitive area is defined in the package diagram. Micronas page 1 of 1