MCT6, MCT61, MCT62, MCT66 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l MCT6 VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 7.0 6.0 1 8 2 3 7 6 5 4 1.2 10.16 9.16 MCT61, MCT62, MCT66 VDE 0884 approval pending l Dimensions in mm 2.54 7.62 4.0 3.0 13° Max 0.5 EN60950 approval pending 3.0 DESCRIPTION The MCT6, MCT61, MCT62 & MCT66 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages mounted two channels per unit. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 30V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB92012m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) Input Output PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 3 1.50 Collector-emitter Breakdown (BVCEO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Coupled Output Rise Time, Fall Time tr , tf Note 1 Note 2 10 V V µA IF = 20mA IR = 10µA VR = 3V 100 V V nA IC = 1mA (note 2) IE = 100µA VCE = 10V % % % % 10mA IF , 10V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 10mA IF , 10V VCE V V VRMS VPK Ω µs 16mA IF , 2mA IC 40mA IF , 2mA IC See note 1 See note 1 VIO = 500V (note 1) IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 1) IC = 2mA, VCC = 10V, RL = 1kΩ (Fig. 2) 30 6 Current Transfer Ratio (CTR) (Note 2) MCT6 20 MCT61 50 MCT62 100 MCT66 6 Collector-emitter Saturation Voltage VCESAT MCT6,61,62 MCT66 Input to Output Isolation Voltage VISO 5300 Input to Output Isolation Voltage VISO 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time, Fall Time tr , tf 2.4 0.4 0.4 µs 15 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC = 10V INPUT VCC = 10V RL = 100Ω toff ton RL = 1kΩ tr OUTPUT FIG 1 7/12/00 TEST CONDITION OUTPUT tf OUTPUT 10% 10% 90% 90% FIG 2 DB92012m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage TA = 25°C 50 Collector current I C (mA) Collector power dissipation P C (mW) 200 150 100 50 40 50 30 30 20 15 20 10 10 IF = 5mA 0 0 -30 0 25 50 75 100 0 125 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 60 1.4 Relative current transfer ratio Forward current I F (mA) 50 40 30 20 10 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0 25 75 100 125 1 5 10 20 Relative Current Transfer Ratio vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature (V) Forward current IF (mA) 1.0 0.5 0 0 25 50 75 Ambient temperature TA ( °C ) 100 Collector-emitter saturation voltage V IF = 10mA VCE = 10V -30 2 Ambient temperature TA ( °C ) 1.5 Relative current transfer ratio 50 CE(SAT) -30 7/12/00 VCE = 10V TA = 25°C 50 0.28 0.24 IF = 16mA IC = 2mA 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB92012m-AAS/A1