SBL13003 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed (Typical [email protected]) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical [email protected]/0.25A) - Wide Reverse Bias S.O.A ○ 3.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-92L 1 2 3 Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage ( VBE = 0 ) 700 V VCEO Collector-Emitter Voltage ( IB = 0 ) 400 V VEBO Emitter-Base Voltage ( IC = 0 ) 9.0 V Collector Current 1.5 A Collector Peak Current ( tP ＜ 5 ms ) 3.0 A Base Current 0.75 A IBM Base Peak Current ( tP ＜ 5 ms ) 1.5 A PC Total Dissipation at TA = 25 °C 1.5 W - 65 ~ 150 °C 150 °C Value Units 83 °C/W IC ICM IB TSTG TJ Storage Temperature Max. Operating Junction Temperature Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient Oct, 2002. Rev. 2 1/5 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved SBL13003 Electrical Characteristics Symbol ( TC = 25 °C unless otherwise noted ) Parameter Condition Min Typ Max Units - - 1.0 5.0 mA 400 - - V Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A IC = 1.0A IC = 1.5A IB = 0.1A IB = 0.25A IB = 0.5A - - 0.3 0.5 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A IC = 1.0A IB = 0.1A IB = 0.25A - - 1.0 1.2 V hFE DC Current Gain IC = 0.5A IC = 1.0A VCE = 2V VCE = 2V 10 5 - 30 25 ton ts tf Resistive Load Turn-On Time Storage Time Fall Time IC = 1.0A IB1 = 0.2A 0.2 1.5 0.15 1.0 3.0 0.4 ts tf Inductive Load Storage Time Fall Time VCC = 15V IB1 = 0.2A L = 0.35mH IC = 1.0A IB2 = -0.5A Vclamp = 300V - 2.0 0.12 4.0 0.3 ㎲ ts tf Inductive Load Storage Time Fall Time VCC = 15V IB1 = 0.2A L = 0.35mH IC = 1.0A IB2 = -0.5A Vclamp = 300V TC = 100 °C - 2.4 0.15 5.0 0.4 ㎲ ICEV VCC = 125V IB2 = - 0.2A - TP = 25㎲ ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% 2/5 TC = 100 °C ㎲ SBL13003 Fig 1. Static Characteristics Fig 2. DC Current Gain 40 2.7 IB = 500mA 2.4 IB = 400mA 30 IB = 300mA 2.1 hFE, DC Current Gain IC, Collector Current [A] 3.0 IB = 250mA 1.8 IB = 200mA 1.5 IB = 150mA IB = 100mA 1.2 IB = 50mA 0.9 0.6 0.3 0.0 o TJ = 125 C o 20 TJ = 25 C ※ Notes : 10 VCE = 5V VCE = 1V IB = 0mA 0 1 2 3 4 0 0.01 5 0.1 VCE, Collector-Emitter Voltage [V] Fig 4. Base-Emitter Saturation Voltage Fig 3. Collector-Emitter Saturation Voltage 10 1.2 1.1 VBE, Base-Emitter Voltage [V] VCE, Collector-Emitter Voltage [V] 1 IC, Collector Current [A] 1 o TJ = 125 C 0.1 o TJ = 25 C 0.01 ※ Note : hFE = 5 0.1 1.0 o TJ = 25 C 0.9 0.8 o TJ = 125 C 0.7 ※ Note : hFE = 5 0.6 0.5 0.1 1 1 IC, Collector Current [A] IC, Collector Current [A] Fig 6. Resistive Load Storage Time Fig 5. Resistive Load Fall Time 10 1000 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 tstg, Time [us] tf, Time [ns] o TJ = 25 C o TJ = 25 C 100 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 0.0 0.3 0.6 0.9 1.2 IC, Collector Current [A] 1.5 1 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IC, Collector Current [A] 3/5 SBL13003 Fig 7. Safe Operation Areas Fig 8. Reverse Biased Safe Operation Areas 1 1.6 10 IC, Collector Current [A] IC, Collector Current [A] 0 10 -1 10 DC -2 10 ※ Notes : TJ ≤ 100 °C IB1 = 1 A RBB = 0 Ω LC = 0.35mH 1.2 0.8 VBE(off) = -9V -5V 0.4 -3V ※ Single Pulse -1.5V -3 10 0 1 10 2 10 3 10 10 Fig 9. Power Derating Curve Power Derating Factor (%) 125 100 75 50 25 0 50 100 150 o TC, Case Temperature ( C) 4/5 0 100 200 300 400 500 600 VCE, Collector-Emitter Clamp Voltage [V] VCE, Collector-Emitter Clamp Voltage [V] 0 0.0 200 700 800 SBL13003 Inductive Load Switching & RBSOA Test Circuit LC f IC IB1 IB VCE D.U.T RBB VClamp VCC VBE(off) Resistive Load Switching Test Circuit RC IC IB1 IB VCE D.U.T RBB VCC VBE(off) 5/5