Product Description Stanford Microdevices SGA-6286 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 75mA , the SGA-6286 typically provides +35 dBm output IP3, 13.8 dB of gain, and +19 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. SGA-6286 DC-5500 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features High Gain : 12.4 dB at 1950 MHz Cascadable 50 Ohm Patented SiGe Technology Gain & Return Loss vs. Freq. @T L=+25°C -8 Gain (dB) 16 ORL 12 -16 IRL GAIN 8 -24 -32 4 Return Loss (dB) 0 20 -40 0 0.00 1.00 2.00 3.00 4.00 Frequency (GHz) Sy mbol 5.00 6.00 Applications Cellular, PCS, CDPD Wireless Data, SONET Satellite Units Frequency Min. Ty p. Max. dB dB dB 850 M Hz 1950 M Hz 2400 M Hz 12.5 13.8 12.4 11.2 15.2 Output Pow er at 1dB Compression dBm dBm 850 M Hz 1950 M Hz 19.0 18.5 Output Third Order Intercept Point (Pow er out per tone = 0dBm) dBm dBm 850 M Hz 1950 M Hz 35.0 33.0 Bandw idth Determined by Return Loss (<-10dB) M Hz G P1dB OIP3 IRL Parameter Operates From Single Supply Low Thermal Resistance Package Small Signal Gain 5500 Input Return Loss dB 1950 M Hz 14.6 Output Return Loss dB 1950 M Hz 20.2 NF Noise Figure dB 1950 M Hz 4.3 VD Device Voltage V RTh Thermal Resistance ORL Test Conditions: VS = 8 V RBIAS = 51 Ohms °C/W ID = 75 mA Typ. TL = 25ºC 3.6 4.0 4.4 97 OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-100613 Rev B Preliminary SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Sy mbol G Parameter Small Signal Gain Unit 100 Frequency (MHz) Frequency Frequency (MHz)(MHz) 500 850 1950 2400 3500 dB 14.0 13.9 13.8 12.4 11.2 9.6 28.1 OIP3 Output Third Order Intercept Point dBm 37.0 36.0 35.0 33.0 31.4 P1dB Output Pow er at 1dB Compression dBm 18.7 19.0 19.0 17.7 16.8 15.2 IRL Input Return Loss dB 18.8 17.4 15.8 14.6 15.5 20.6 ORL Output Return Loss dB 35.7 36.3 23.8 13.9 13.4 16.4 S12 Reverse Isolation dB 18.4 18.6 18.8 18.8 18.5 17.0 NF Noise Figure dB 4.0 3.9 3.9 4.3 4.5 4.8 Test Conditions: VSS== 88 V V V RBIAS = 51 Ohms R BIAS= 39 Ohms 75 mA mA Typ. Typ. IIDD == 80 25ºC TTLL == 25ºC OIP33 Tone Tone Spacing Spacing == 11 MHz, MHz, Pout Pout per per tone tone == 00 dBm dBm OIP 50 Ohms Ohms ZZSS== ZZLL== 50 Absolute Maximum Ratings Noise Figure vs. Frequency Noise Figure (dB) VD= 4.0 V, ID= 75 mA 6.0 Parameter Absolute Limit 5.0 Max. Device Current (ID) 150 mA 4.0 3.0 TL=+25ºC 2.0 1.0 Max. Device Voltage (VD) 6V Max. RF Input Pow er +16 dBm Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Operation of this device beyond any one of these limits may cause permanent damage. 0.0 0 1 2 3 Frequency (GHz) 4 5 Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth P1dB vs. Frequency OIP3 vs. Frequency VD= 4.0 V, ID= 75 mA VD= 4.0 V, ID= 75 mA 40 20 TL +25°C 18 -40°C +85°C P1dB(dBm) OIP3(dBm) 36 32 28 16 14 +25°C 24 12 20 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TL 0.0 Frequency (GHz) 726 Palomar Ave., Sunnyvale, CA 94085 0.5 1.0 1.5 2.0 2.5 -40°C +85°C 3.0 3.5 Frequency (GHz) Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-100613 Rev B Preliminary SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier S21 vs. Frequency S11 vs. Frequency VD= 4.0 V, ID= 75 mA 20 -5 +25°C -40°C +85°C TL 16 TL -10 S11(dB) 12 S21(dB) VD= 4.0 V, ID= 75 mA 8 4 -15 -20 -25 -30 0 -35 0 1 2 3 4 Frequency (GHz) 5 6 0 1 S12 vs. Frequency 5 6 VD= 4.0 V, ID= 75 mA -5 -10 S22(dB) -10 S12(dB) 2 3 4 Frequency (GHz) S22 vs. Frequency VD= 4.0 V, ID= 75 mA -5 -15 -20 +25°C -40°C +85°C TL -25 -15 -20 -25 +25°C -40°C +85°C TL -30 -35 -30 0 1 2 3 4 Frequency (GHz) 5 0 6 VD vs. ID over Temperature for fixed VS= 8 V, RBIAS= 51 ohms * 90 1 2 3 4 Frequency (GHz) 5 6 VD vs. Temperature for Constant ID = 75 mA 4.60 85 4.40 VD (Volts) +85°C 80 ID(mA) +25°C -40°C +85°C +25°C 75 -40°C 70 4.20 4.00 3.80 65 60 3.6 3.8 4.0 VD(Volts) 4.2 4.4 3.60 -40 -15 10 35 Temperature (°C) 60 85 * Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-100613 Rev B Preliminary SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier SGA-6286 Basic Application Circuit Application Circuit Element Values R BIAS VS 1 uF 1000 pF 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD LC 4 1 SGA-6286 3 RF in RF out CB 2 CB Frequency (Mhz) Reference Designator Recommended Bias Resistor Values for ID=75mA Supply Voltage(VS) RBIAS 8V 27 51 10 V 82 12 V 110 Note: RBIAS provides DC bias stability over temperature. VS 1 uF RBIAS A62 CB 6V 1000 pF CD LC Mounting Instructions 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. CB 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking The part will be marked with an A62 designator on the top surface of the package. 3 4 A62 Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 2 3 1 For package dimensions, refer to outline drawing at www.stanfordmicro.com Caution: ESD sensitive RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. 4 GND Sames as Pin 2 Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. 726 Palomar Ave., Sunnyvale, CA 94085 Description Part Number Reel Size Devices/Reel SGA-6286 13" 3000 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-100613 Rev B