Preliminary Product Description SGA-6586 Stanford Microdevices’ SGA-6586 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable plastic package. Designed for operation at voltages as low as 5.0V, this RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-2500 MHz Silicon Germanium HBT Cascadeable Gain Block This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-6586 requires only DC blocking and bypass capacitors for external components. Small Signal Gain vs. Frequency Product Features • DC-2500 MHz Operation • Single Voltage Supply • High Output Intercept: +34.0 dBm typ. at 850 MHz 35 30 • • • 25 dB 20 15 High Output Power : 21.5 dBm typ. at 850 MHz High Gain : 24.0 dB typ. at 850 MHz Internally Matched to 50 Ohms Input & Output 10 5 Frequency MHz Symbol 6000 5000 4000 3000 2000 1000 100 0 Applications • Oscillator Amplifiers • Final PA for Low Power Applications • IF/ RF Buffer Amplifier • Drivers for CATV Amplifiers Parameters: Test Conditions: Z0 = 50 Ohms, Id = 80 mA, T = 25ºC Units P 1dB Output Power at 1dB Compression f = 850 MHz f = 1950 MHz S 21 Small Signal Gain S 12 Reverse Isolation Min. Typ. dB m dB m 21.5 18.1 f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 2500 MHz dB dB dB 25.6 20.3 17.2 f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 2500 MHz dB dB dB 27.8 23.3 20.2 S11 Input VSWR f = DC - 2500 MHz - 1.1:1 S 22 Output VSWR f = DC - 2500 MHz - 1.2:1 IP3 Third Order Intercept Point Power out per tone = 3 dBm f = 850 MHz f = 1950 MHz dB m dB m 33.8 32.5 NF Noise Figure f = DC - 1000 MHz f = 1000 - 2500 MHz dB dB 2.6 3.4 TD Group Delay f = 1000 MHz pS 163 VD Device Voltage V 4.6 5.0 Max. 5.4 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101160 Rev B Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier Specification Parameter Device Bias Operating Voltage Operating Current 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation Min Typ. Test Max. Unit Condition T= 25C 4.6 5.0 80.0 5.4 V mA 21.5 25.8 2.5 32.2 20.9 19.9 28.0 dB dB dB m dB m dB dB 23.8 2.7 33.8 21.5 23.3 26.5 dB dB dB m dB m dB dB 18.4 3.1 32.2 18.0 23.7 21.4 dB dB dB m dB m dB dB 16.7 3.7 30.2 16.8 18.2 19.7 dB dB dB m dB m dB dB T= 25C T= 25C T= 25C T= 25C The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101160 Rev B Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier Pin # 1 Function Description RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. GND Sames as Pin 2 2 3 4 Device Schematic Application Schematic for Operation at 900 MHz Recommended Bias Resistor Values Supply Voltage(Vs) 6V 8V 9V 12V Rbias (Ohms) 12 36 51 91 1uF 68pF R bias Vs For 8V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended. 33nH 50 ohm microstrip 50 ohm microstrip 2 1 RF IN RF OUT 3 100pF 100pF 4 Application Schematic for Operation at 1900 MHz 1uF 22pF R bias Vs 22nH 50 ohm microstrip 50 ohm microstrip 2 1 RF IN RF OUT 3 68pF 68pF 4 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101160 Rev B Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier S21, Id =80mA, T=25C 40 0 30 -1 0 6000 6000 Frequency MHz 6000 -40 5000 -40 5000 -30 100 -30 5000 dB -20 4000 dB -20 3000 -10 2000 -10 1000 0 4000 S22, Id =80mA, T=25C 3000 S11, Id =80mA, T=25C 2000 Frequency MHz 1000 Frequency MHz 0 100 4000 100 6000 5000 4000 -4 0 3000 0 2000 -3 0 1000 10 3000 -2 0 2000 dB 1000 20 100 dB S12, Id =80mA, T=25C Frequency MHz S22, Id=80mA, Ta=25C S11, Id=80mA, Ta=25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101160 Rev B Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier S21, Id =80mA, T=-40C S12, Id =80mA, T=-40C 40 0 30 -1 0 6000 100 Frequency MHz 6000 -40 5000 -40 5000 -30 6000 -30 5000 dB -20 4000 dB -20 3000 -10 2000 -10 1000 0 4000 S22, Id =80mA, T=-40C 3000 S11, Id =80mA, T=-40C 2000 Frequency MHz 1000 Frequency MHz 0 100 4000 100 6000 5000 4000 3000 -4 0 2000 0 1000 -3 0 100 10 3000 -2 0 2000 dB 1000 20 dB Frequency MHz S22, Id=80mA, Ta=-40C S11, Id=80mA, Ta=-40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101160 Rev B Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier 0 -1 0 -1 0 Frequency MHz 4000 100 6000 5000 4000 -4 0 3000 -4 0 2000 -3 0 1000 -3 0 3000 -2 0 2000 dB 1000 -2 0 6000 S22, Id =80mA, T=85C 6000 S11, Id =80mA, T=85C 5000 6000 Frequency MHz 0 100 dB Frequency MHz 5000 -4 0 4000 0 3000 -3 0 100 10 5000 dB -2 0 4000 dB 2 0 3000 -1 0 2000 30 1000 0 100 40 2000 S12, Id =80mA, T=85C 1000 S21, Id =80mA, T=85C Frequency MHz S22, Id=80mA, Ta=85C S11, Id=80mA, Ta=85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101160 Rev B Preliminary SGA-6586 DC-2500 MHz 5.0V SiGe Amplifier Absolute Maximum Ratings Parameter Supply Current Operating Temperature Maximum Input Power Storage Temperature Range Operating Junction Temperature Part Number Ordering Information Value Unit Part Number Reel Siz e Devices/Reel 160 mA SGA-6586 13" 3000 -40 to +85 C +6 dB m -40 to +150 C +150 C Caution: Operation of this device above any one of these parameters may cause permanent damage. Appropriate precautions in handling, packaging and testing devices must be observed. Thermal Resistance (Lead-Junction): 97° C/W Package Dimensions Pin Designation 1 RF in 2 GND 3 RF out and Bias 4 GND PCB Pad Layout The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-101160 Rev B