TSL253, TSL254 PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER TAOS022 – JANUARY 2000 Monolithic Silicon IC Containing SR PACKAGE (FRONT VIEW) Photodiode, Operational Amplifier, and Feedback Components Converts Light Intensity to Output Voltage High Irradiance Responsivity . . . Typically 60 mV/(µW/cm2) at λp = 880 nm (TSL253) High Bandwidth Compact 3-Leaded Clear Plastic Package Low Dark (Offset) Voltage . . . 10 mV Max At 25°C, VDD = 5 V Single-Supply Operation Wide Supply-Voltage Range . . . 2.7 V to 5.5 V Low Supply Current . . . 600 µA Typical at VDD = 5 V 1 2 GND VDD 3 OUT Description The TSL253 and TSL254 are light-to-voltage optical converters, each combining a 1-mm-square photodiode and a transimpedance amplifier (feedback resistor = 16 MΩ, and 1 MΩ respectively) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices use silicon-gate CMOS technology that provides improved amplifier offset-voltage stability and low power consumption. Functional Block Diagram – Voltage Output + Terminal Functions TERMINAL NAME DESCRIPTION NO. GND 1 Ground (substrate). All voltages are referenced to GND. OUT 3 Output voltage VDD 2 Supply voltage www.taosinc.com Copyright 2000, TAOS Inc. Texas Advanced Optoelectronic Solutions Inc. 800 Jupiter Road, Suite 205 Plano, TX 75074 (972) 673-0759 1 TSL253, TSL254 PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER TAOS022 – JANUARY 2000 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to GND. Recommended Operating Conditions Supply voltage, VDD Operating free-air temperature, TA MIN MAX 2.7 5.5 UNIT V 0 70 °C Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 880 nm, RL = 10 kΩ (unless otherwise noted) (see Notes 2 and 3) TSL253 PARAMETER VD VOM Dark voltage Maximum output voltage swing VO Output voltage αvo Tem erature coefficient of output Temperature out ut voltage (VO) Ne Irradiance responsivity TEST CONDITIONS MIN TYP IDD MAX Ee = 0 3 3.5 Ee = 35 µW/cm2 1.6 2 Ee = 2 MIN TYP UNIT MAX 10 mW/cm2 10 3 3.5 1.6 2 mV V 2.4 Ee = 595 µW/cm2 V 2.4 300 nm < λ < 700 nm –0.2 –0.2 λp = 880 nm 0.05 0.05 60 3.5 mV/(µW/cm2) 60 60 dB 18 44 Power supply rejection, dc Power supply rejection, ac TSL254 fac = 1 kHz Supply current 0.6 1.5 0.6 %/°C dB 1.5 mA NOTES: 2. The input irradiance Ee is supplied by a GaAlAs infrared-emitting diode with λp = 880 nm. 3. Irradiance responsivity is characterized over the range VO = 0.05 to 3 V. Switching Characteristics at TA = 25°C (see Figure 1) TSL253 PARAMETER TEST CONDITIONS MIN TYP tr Output pulse rise time VDD = 5 V, λp = 880 nm 7.5 tf Output pulse fall time VDD = 5 V, λp = 880 nm Vn Output noise voltage g VDD = 5 V MIN TYP MAX UNIT 2 µs µs 7.5 2 f = 100 Hz 3 1.7 f = 1 kHz 3 1 f = 10 kHz 6 1.3 µV/√Hz µ √ www.taosinc.com 2 TSL254 MAX TSL253, TSL254 PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER TAOS022 – JANUARY 2000 PARAMETER MEASUREMENT INFORMATION VDD Pulse Generator Ee 2 Input – IRED (see Note A) 3 tf tr Output + 90% RL TSL25x 1 Output (see Note B) 10% 90% 10% VOLTAGE WAVEFORM TEST CIRCUIT NOTES: A. The input irradiance is supplied by a pulsed GaAlAs infrared-emitting diode with the following characteristics: λp = 880 nm, tr < 1 µs, tf < 1 µs. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MHz, Ci ≤ 20 pF. Figure 1. Switching Times www.taosinc.com 3 TSL253, TSL254 PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER TAOS022 – JANUARY 2000 TYPICAL CHARACTERISTICS OUTPUT VOLTAGE vs IRRADIANCE PHOTODIODE SPECTRAL RESPONSIVITY 1 10 TSL253 TSL254 0.8 Relative Responsivity 1 VO – Output Voltage – V TA = 25°C VDD = 5 V λp = 880 nm No Load TA = 25°C 0.1 0.6 0.4 0.01 0.2 0 300 0.001 1 10 100 Ee – Irradiance – µW/cm2 1000 500 Figure 2 Figure 3 NORMALIZED OUTPUT VOLTAGE vs ANGULAR DISPLACEMENT MAXIMUM OUTPUT VOLTAGE vs SUPPLY VOLTAGE 1 Ee = 2 mW/cm2 λp = 880 nm RL = 10 kΩ TA = 25°C 0.8 3 2 1 0 3 3.5 4 4.5 VDD – Supply Voltage – V 5 0.6 Optical Axis 4 VO – Normalized Output Voltage VOM – Maximum Output Voltage – V 5 0.4 0.2 0 80° 60° 40° 20° 0° 20° 40° θ – Angular Displacement Figure 4 60° 80° Figure 5 www.taosinc.com 4 1100 700 900 λ – Wavelength – nm TSL253, TSL254 PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER TAOS022 – JANUARY 2000 TYPICAL CHARACTERISTICS POWER SUPPLY REJECTION vs FREQUENCY SUPPLY CURRENT vs FREE-AIR TEMPERATURE 70 0.62 TA = 25°C VDD = 5.5 V No Load 0.61 50 I DD– Supply Current – mA Power Supply Rejection – dB 60 TSL254 40 30 20 10 0 TSL253 –10 –20 0.1 k 1k 0.60 0.59 0.58 0.57 0.56 0.55 10 k 100 k 0.54 0 1000 k 10 20 Figure 6 50 60 70 OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 0.7 1.2 VO – Output Voltage – Normelized to – 25 °C TA = 25°C No Load 0.6 I DD – Supply Current – mA 40 Figure 7 SUPPLY CURRENT vs SUPPLY VOLTAGE 0.5 0.4 0.3 0.2 0.1 0 2.7 30 TA – Free-Air Temperature – °C f – Frequency – Hz VDD = 5V λp = 300 nm to 700 nm 1 0.8 0.6 0.4 0.2 0 3.2 3.7 4.2 4.7 5.2 VDD – Supply Voltage – V 5.7 0 10 50 60 20 30 40 TA – Free-Air Temperature – °C Figure 8 www.taosinc.com 70 Figure 9 5 TSL253, TSL254 PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER TAOS022 – JANUARY 2000 TYPICAL CHARACTERISTICS OUTPUT VOLTAGE vs SUPPLY VOLTAGE 1.001 V O – Output Voltage (Normalized) – V 1 0.999 0.998 0.997 0.996 0.995 0.994 0.993 0.992 0.991 0.99 2.5 3 5.5 3.5 4 4.5 5 VDD – Supply Voltage – V 6 6.5 Figure 10 INTEGRATED NOISE VOLTAGE vs MEASUREMENT BANDWIDTH FREQUENCY V n – Integrated Noise Voltage – µ Vrms 105 VDD = 5 V TA = 25°C 104 TSL253 103 TSL254 102 10 0.1 1 10 100 1000 f – Measurement Bandwidth Frequency – kHz Figure 11 www.taosinc.com 6 TSL253, TSL254 PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER TAOS022 – JANUARY 2000 MECHANICAL DATA PLASTIC SINGLE-IN-LINE PACKAGE (OPTO) 0.108 (2,74) 0.092 (2,34) 0.069 (1,75) 0.049 (1,25) 0.081 (2,05) 0.061 (1,55) 0.191 (4,85) 0.171 (4,35) 0.033 (0,85) 0.014 (0,35) 0.120 (3,05) 0.100 (2,55) 0.189 (4,80) 0.173 (4,40) 0.125 (3,18) (See Note C) 0.049 (1,25) 0.029 (0,75) 0.619 (15,70) 0.520 (13,20) 1 0.084 (2,13) 0.074 (1,88) 2 3 0.020 (0,51) 0.015 (0,39) 0.025 (0,64) 0.016 (0,40) 0.165 (4,20) 0.150 (3,80) NOTES: A. B. C. D. E. F. All linear dimensions are in inches (millimeters). This drawing is subject to change without notice. Lead dimensions are not controlled within this area. All dimensions apply before solder dip. Package body is a clear nonfilled optically transparent material Index of refraction of clear plastic is 1.55. www.taosinc.com 7 TSL253, TSL254 PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER TAOS022 – JANUARY 2000 PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters. NOTICE Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems. TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK. www.taosinc.com 8