TI TS5A23159DGST

TS5A23159
www.ti.com ........................................................................................................................................................ SCDS201E – AUGUST 2005 – REVISED JULY 2009
1-Ω DUAL SPDT ANALOG SWITCH
5-V/3.3-V 2-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER
FEATURES
APPLICATIONS
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1
Isolation in Power-Down Mode, V+ = 0
Specified Break-Before-Make Switching
Low ON-State Resistance (1 Ω)
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
•
Cell Phones
PDAs
Portable Instrumentation
Audio and Video Signal Routing
Low-Voltage Data-Acquisition Systems
Communication Circuits
Modems
Hard Drives
Computer Peripherals
Wireless Terminals and Peripherals
DGS PACKAGE
(TOP VIEW)
RSE PACKAGE
(TOP VIEW)
COM1
IN1
1
10
9
NC1
NO1
2
8
V+
GND
3
7
NC2
NO2
4
5
6
COM2
IN1
1
10
NO1
2
9
NC1
GND
3
8
V+
NO2
4
7
NC2
IN2
5
6
COM2
COM1
IN2
DESCRIPTION/ORDERING INFORMATION
The TS5A23159 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V
to 5.5 V. The device offers low ON-state resistance and excellent ON-state resistance matching with the
break-before-make feature, to prevent signal distortion during the transferring of a signal from one channel to
another. The device has an excellent total harmonic distortion (THD) performance and consumes very low
power. These features make this device suitable for portable audio applications.
ORDERING INFORMATION (1)
PACKAGE (2)
TA
–40°C to 85°C
(1)
(2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
VSSOP – DGS (MSOP)
Tape and reel
TS5A23159DGSR
JER or JEO
QFN – RSE
Tape and reel
TS5A23159RSER
JEO
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2009, Texas Instruments Incorporated
TS5A23159
SCDS201E – AUGUST 2005 – REVISED JULY 2009 ........................................................................................................................................................ www.ti.com
SUMMARY OF CHARACTERISTICS (1)
Dual 2:1
Multiplexer/Demultiplexer
(2 × SPDT)
Configuration
Number of channels
2
1.1 Ω
ON-state resistance (ron)
ON-state resistance match (Δron)
0.1 Ω
ON-state resistance flatness (ron(flat))
0.15 Ω
Turn-on/turn-off time (tON/tOFF)
20 ns/15 ns
Break-before-make time (tBBM)
12 ns
Charge injection (QC)
–7 pC
Bandwidth (BW)
100 MHz
OFF isolation (OISO)
–65 dB at 1 MHz
Crosstalk (XTALK)
–66 dB at 1 MHz
Total harmonic distortion (THD)
0.01%
Leakage current (INO(OFF)/INC(OFF))
±20 nA
Power-supply current (I+)
50 nA
Package options
(1)
10-pin VSSOP and QFN
V+ = 5 V, TA = 25°C
FUNCTION TABLE
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
L
ON
OFF
H
OFF
ON
IN
2
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TS5A23159
www.ti.com ........................................................................................................................................................ SCDS201E – AUGUST 2005 – REVISED JULY 2009
Absolute Minimum and Maximum Ratings (1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
V+
Supply voltage range (3)
–0.5
6.5
V
VNC
VNO
VCOM
Analog voltage range (3) (4) (5)
–0.5
V+ + 0.5
V
IK
Analog port diode current
INC
INO
ICOM
On-state switch current
VI
Digital input voltage range (3) (4)
IIK
Digital input clamp current
I+
Continuous current through V+
IGND
Continuous current through GND
θJA
Package thermal impedance (7)
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
(6)
(7)
On-state peak switch current (6)
VNC, VNO, VCOM < 0
VNC, VNO, VCOM = 0 to V+
VI < 0
–50
mA
–200
200
–400
400
–0.5
6.5
–50
–100
mA
V
mA
100
mA
100
mA
DGS package
165
RSE package
TBD
–65
UNIT
150
°C/W
°C
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Pulse at 1-ms duration < 10% duty cycle
The package thermal impedance is calculated in accordance with JESD 51-7.
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TS5A23159
SCDS201E – AUGUST 2005 – REVISED JULY 2009 ........................................................................................................................................................ www.ti.com
Electrical Characteristics for 5-V Supply (1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
NC, NO
OFF leakage
current
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 14
25°C
VNO or VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
25°C
Full
Full
Δron
ron(flat)
INO(OFF),
INC(OFF)
NC, NO
ON leakage
current
INO(ON),
INC(ON)
COM
OFF leakage
current
ICOM(PWROFF)
ICOM(ON)
VNO or VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 14
VNO or VNC = 1 V, 1.5 V,
2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
VNC or VNO = 1 V,
VCOM = 1 V to 4.5 V,
or
VNC or VNO = 4.5 V,
VCOM = 1 V to 4.5 V,
Switch OFF,
See Figure 15
VNC or VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 15
VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 4.5 V,
VCOM = Open,
Switch ON,
See Figure 16
VNC or VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 15
VNC or VNO = Open,
VCOM = 1 V,
or
VNC or VNO = Open,
VCOM = 4.5 V,
Switch ON,
See Figure 16
Full
0.7
4.5 V
0.05
4.5 V
Full
0.1
–20
5.5 V
0V
5.5 V
0.25
Ω
Ω
–1
5.5 V
0.2
1
20
2
–100
0.1
1
20
2
nA
µA
20
100
–20
–20
20
100
–20
–1
0V
2
–100
–20
25°C
Full
Ω
0.25
25°C
Full
Ω
0.15
25°C
Full
V
0.1
0.1
4.5 V
25°C
25°C
0.9
1.1
Full
Full
1.1
1.5
25°C
25°C
V+
0.8
4.5 V
25°C
INC(PWROFF),
INO(PWROFF)
COM
ON leakage
current
0
nA
µA
20
nA
–100
100
2.4
5.5
V
Full
0
0.8
V
25°C
–2
2
–100
100
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
(2)
4
IIH, IIL
Full
VI = 5.5 V or 0
Full
5.5 V
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A23159
TS5A23159
www.ti.com ........................................................................................................................................................ SCDS201E – AUGUST 2005 – REVISED JULY 2009
Electrical Characteristics for 5-V Supply (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
5V
1
8
13
Full
4.5 V
to
5.5 V
1
25°C
5V
1
Full
4.5 V
to
5.5 V
1
25°C
5V
1
Full
4.5 V
to
5.5 V
1
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Break-beforemake time
tBBM
VNC = VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
Charge
injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
5V
–7
pC
16.5
5
8
8
5.5
ns
ns
13
14
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 17
25°C
5V
18
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 17
25°C
5V
55
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 17
25°C
5V
54.5
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 17
25°C
5V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
5V
100
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
5V
–64
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
5V
–64
dB
Total
harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
25°C
5V
0.004
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive
supply
current
25°C
I+
Full
10
5.5 V
50
750
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Electrical Characteristics for 3.3-V Supply (1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
0
V+
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
NC, NO
OFF leakage
current
Switch ON,
See Figure 14
25°C
VNO or VNC = 2 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
25°C
Full
Full
1.3
3V
Δron
ron(flat)
INO(OFF),
INC(OFF)
NC, NO
ON leakage
current
INO(ON),
INC(ON)
COM
OFF leakage
current
ICOM(PWROFF)
ICOM(ON)
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 14
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
VNC or VNO = 1 V,
VCOM = 1 V to 3 V,
or
VNC or VNO = 3 V,
VCOM = 1 V to 3 V,
Switch OFF,
See Figure 15
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 15
VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 3 V,
VCOM = Open,
Switch ON,
See Figure 16
VNC or VNO = 3.6 V to 0,
VCOM = 0 to 3.6 V,
Switch OFF,
See Figure 15
VNC or VNO = Open,
VCOM = 1 V,
or
VNC or VNO = Open,
VCOM = 3 V,
Switch ON,
See Figure 16
Full
1.2
3V
1.5
1.7
0.1
3V
Ω
Ω
0.15
Ω
0.2
25°C
25°C
1.6
2
25°C
INC(PWROFF),
INO(PWROFF)
COM
ON leakage
current
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
V
0.15
Ω
3V
Full
25°C
Full
25°C
Full
–20
3.6 V
0V
25°C
Full
25°C
Full
–1
3.6 V
0.2
1
15
2
–20
0.2
1
15
2
nA
µA
10
20
–15
–10
20
50
–15
–1
0V
25°C
Full
–50
–10
3.6 V
2
nA
µA
10
nA
–20
20
2
5.5
V
Full
0
0.8
V
25°C
–2
2
–20
20
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
(2)
6
IIH, IIL
Full
VI = 5.5 V or 0
Full
3.6 V
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Submit Documentation Feedback
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A23159
TS5A23159
www.ti.com ........................................................................................................................................................ SCDS201E – AUGUST 2005 – REVISED JULY 2009
Electrical Characteristics for 3.3-V Supply (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
25°C
3.3 V
5
Full
3 V to
3.6 V
3
25°C
3.3 V
1
Full
3 V to
3.6 V
1
25°C
3.3 V
1
Full
3 V to
3.6 V
1
TYP MAX
UNIT
Dynamic
11
19
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Break-beforemake time
tBBM
VNC = VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
Charge
injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
3.3 V
–4
pC
22
5
9
9
7
ns
ns
17
20
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 17
25°C
3.3 V
18
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 17
25°C
3.3 V
56
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 17
25°C
3.3 V
56
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 17
25°C
3.3 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
3.3 V
100
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
3.3 V
–64
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
3.3 V
–64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
25°C
3.3 V
0.01
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
I+
25°C
Full
3.6 V
25
150
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Electrical Characteristics for 2.5-V Supply (1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
0
V+
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
NC, NO
OFF leakage
current
Switch ON,
See Figure 14
25°C
VNO or VNC = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 14
25°C
Full
Full
1.8
2.3 V
Δron
VNO or VNC = 1.8 V, 0.8 V, Switch ON,
ICOM = –8 mA,
See Figure 14
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
ron(flat)
INO(OFF),
INC(OFF)
NC, NO
ON leakage
current
INO(ON),
INC(ON)
COM
OFF leakage
current
ICOM(PWROFF)
ICOM(ON)
Switch ON,
See Figure 14
Full
1.5
2.3 V
25°C
VNC or VNO = 0.5 V,
VCOM = 0.5 V to 2.3 V,
or
VNC or VNO = 2.2 V,
VCOM = 0.5 V to 2.3 V,
25°C
Switch OFF,
See Figure 15
0.15
2.3 V
VNC or VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
Switch OFF,
See Figure 15
VNC or VNO = 0.5 V,
VCOM = Open,
or
VNC or VNO = 2.2 V,
VCOM = Open,
Switch ON,
See Figure 16
VNC or VNO = 2.7 V to 0,
VCOM = 0 to 2.7 V,
Switch OFF,
See Figure 15
VNC or VNO = Open,
VCOM = 0.5 V,
or
VNC or VNO = Open,
VCOM = 2.2 V,
Switch ON,
See Figure 16
25°C
Full
0.6
–20
2.3 V
0V
2.7 V
1
Ω
–1
2.7 V
0.1
1.0
10
2
–20
0.1
1
10
2
nA
µA
10
20
–10
–10
20
50
–10
–1
0V
2
–50
–10
25°C
Full
Ω
1
25°C
Full
Ω
0.6
2.3 V
25°C
Full
Ω
0.2
0.2
Full
Full
2
2.4
25°C
VNO or VNC = 0.8 V, 1.8 V, Switch ON,
ICOM = –8 mA,
See Figure 14
2.5
2.7
25°C
INC(PWROFF),
INO(PWROFF)
COM
ON leakage
current
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
V
nA
µA
10
nA
–20
20
1.8
5.5
V
Full
0
0.6
V
25°C
–2
2
–20
20
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
(2)
8
IIH, IIL
Full
VI = 5.5 V or 0
Full
2.7 V
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Submit Documentation Feedback
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A23159
TS5A23159
www.ti.com ........................................................................................................................................................ SCDS201E – AUGUST 2005 – REVISED JULY 2009
Electrical Characteristics for 2.5-V Supply (1) (Continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
25°C
2.5 V
5
Full
2.3 V to
2.7 V
5
25°C
2.5 V
2
Full
2.3 V to
2.7 V
2
25°C
2.5 V
1
Full
2.3 V to
2.7 V
1
TYP MAX
UNIT
Dynamic
15
28
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Break-beforemake time
tBBM
VNC = VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
Charge
injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
2.5 V
–3
pC
32
6
9
10
10
ns
ns
27
30
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 17
25°C
2.5 V
18.5
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 17
25°C
2.5 V
56.5
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 17
25°C
2.5 V
56.5
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 17
25°C
2.5 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
2.5 V
100
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
2.5 V
–64
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
2.5 V
–64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
25°C
2.5 V
0.02
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
(1)
I+
25°C
Full
2.7 V
10
25
100
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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Electrical Characteristics for 1.8-V Supply (1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
0
V+
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –2 mA,
Switch ON,
See Figure 14
25°C
VNO or VNC = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 14
25°C
Full
Full
Δron
VNO or VNC = 0.6 V, 1.5 V, Switch ON,
ICOM = –2 mA,
See Figure 14
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –2 mA,
ron(flat)
Switch ON,
See Figure 14
Full
2
1.65 V
VNC or VNO = 0.3 V,
VCOM = 0.3 V to 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V to 1.65 V
25°C
Switch OFF,
See Figure 15
INC(PWROFF),
INO(PWROFF)
VNC or VNO = 0 to
1.95 V,
VCOM = 1.95 V to 0,
Switch OFF,
See Figure 15
NC, NO
ON leakage
current
INO(ON),
INC(ON)
VNC or VNO = 0.3 V,
VCOM = Open,
or
VNC or VNO = 1.65 V,
VCOM = Open,
Switch ON,
See Figure 16
COM
OFF leakage
current
ICOM(PWROFF)
VNC or VNO = 1.95 V to 0,
VCOM = 0 to 1.95 V,
Switch OFF,
See Figure 15
VNC or VNO = Open,
VCOM = 0.3 V,
or
VNC or VNO = Open,
VCOM = 1.65 V,
Switch ON,
See Figure 16
INO(OFF),
INC(OFF)
ICOM(ON)
2.5
3.5
0.15
1.65 V
Ω
Ω
0.4
0.4
25°C
25°C
COM
ON leakage
current
15
25°C
VNO or VNC = 0.6 V, 1.5 V, Switch ON,
ICOM = –2 mA,
See Figure 14
NC, NO
OFF leakage
current
5
1.65 V
V
Ω
5
1.65 V
Ω
4.5
Full
Full
–20
1.65 V
25°C
Full
25°C
Full
1.95 V
25°C
Full
1
5
2
0.1
1
5
2
nA
µA
5
20
–5
–10
1.95 V
0.1
–20
–1
0V
20
50
–5
–5
25°C
Full
–50
–1
0V
2
nA
µA
10
nA
–20
20
1.5
5.5
V
Full
0
0.6
V
25°C
–2
2
–20
20
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
(2)
10
IIH, IIL
Full
VI = 5.5 V or 0
Full
1.95 V
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Electrical Characteristics for 1.8-V Supply (1) (Continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
25°C
1.8 V
10
Full
1.65 V to
1.95 V
10
25°C
1.8 V
2
Full
1.65 V to
1.95 V
2
25°C
1.8 V
1
Full
1.65 V to
1.95 V
1
TYP MAX
UNIT
Dynamic
27.5
48.5
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Break-beforemake time
tBBM
VNC = VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
Charge
injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
1.8 V
2
pC
55
6.5
11
12
18
ns
ns
50
55
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 17
25°C
1.8 V
18.5
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 17
25°C
1.8 V
56.5
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 17
25°C
1.8 V
56.5
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 17
25°C
1.8 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
1.8 V
105
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
1.8 V
–64
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
1.8 V
–64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
25°C
1.8 V
0.06
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
(1)
I+
25°C
Full
1.95 V
10
25
50
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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TYPICAL PERFORMANCE
3.5
1.3
2.5
1.1
V+ = 1.8 V
2
ron (Ω)
ron (Ω)
3
V+ = 2.5 V
1.5
TA = 85°C
TA = 25°C
TA = −40°C
1.5
TA = 255C
0.9
0.7
0.5
V+ = 3 V
1
0.3
0.5
0.1
V+ = 4.5 V
0
1
2
VCOM (V)
0
0
1
2
3
VCOM (V)
Figure 1. ron vs VCOM
4
3
4
Figure 2. ron vs VCOM (V+ = 3.3 V)
1.0
20
COM (on)
0.9
0.8
Leakage (nA)
ron (Ω)
0.7
0.6
0.5
0.4
TA = 85°C
TA = 25°C
TA = −40°C
0.3
0.2
1
2
3
4
5
NO/NC (on)
−20
NO/NC (off)
0.1
0
0
−40
−60
6
VCOM (V)
COM (on)
Charge Injection (pC)
3000
Leakage (nA)
2500
2000
1500
NO/NC (on)
1000
500
0
−500
−60
70
60
50
40
30
20
10
0
−10
−20
−30
−20
0
20
40
60
80
100
Temperature (°C)
Figure 5. Leakage Current vs Temperature
(V+ = 5 V)
12
0
20
40
60
80
100
V+ = 5 V
V+ = 3 V
0
−40
−20
Temperature (°C)
Figure 4. Leakage Current vs Temperature
(V+ = 3.3 V)
Figure 3. ron vs VCOM (V+ = 5 V)
3500
−40
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1
2
3
4
5
6
Bias Voltage (V)
Figure 6. Charge Injection (QC) vs VCOM
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TYPICAL PERFORMANCE (continued)
35
10
tON
30
9
8
tON/tOFF (ns)
tON/tOFF (ns)
25
20
15
10
tOFF
tOFF
7
6
tON
5
4
3
2
5
1
0
0
1
2
3
4
5
0
6
−40°C
25°C
TA (5C)
V+ (V)
Figure 7. tON and tOFF vs Supply Voltage
85°C
Figure 8. tON and tOFF vs Temperature (5-V Supply)
2.5
0
VIN rising
−2
2.0
Gain (dB)
VIN (V)
−4
VIN falling
1.5
1.0
−6
−8
−10
0.5
−12
0.0
0
1
2
3
4
5
−14
0.1
6
1
V+ (V)
Figure 9. Logic-Level Threshold vs V+
0.010
−10
0.009
−20
1000
V+ = 3.3 V
0.008
−30
THD (%)
Attenuation (dB)
100
Figure 10. Bandwidth (V+ = 5 V)
0
−40
−50
−60
0.007
0.006
0.005
−70
0.004
−80
0.003
−90
0.1
10
Frequency (MHz)
1
10
Frequency (MHz)
100
1000
V+ = 5 V
0.002
0.001
0
10
Figure 11. OFF Isolation vs Frequency
100
1000
Frequency (Hz)
10000
100000
Figure 12. Total Harmonic Distortion vs Frequency
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TYPICAL PERFORMANCE (continued)
250
200
I+ (nA)
150
100
50
0
-50
-40 °C
25°C
85°C
TA (°C)
Figure 13. Power-Supply Current vs Temperature (V+ = 5
V)
PIN DESCRIPTION
14
PIN
NO.
NAME
1
IN1
Digital control to connect COM to NO or NC
2
NO1
Normally open
3
GND
Digital ground
4
NO2
Normally open
5
IN2
Digital control to connect COM to NO or NC
6
COM2
7
NC2
8
V+
9
NC1
10
COM1
DESCRIPTION
Common
Normally closed
Power supply
Normally closed
Power supply
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PARAMETER DESCRIPTION
SYMBOL
VCOM
DESCRIPTION
Voltage at COM
VNC
Voltage at NC
VNO
Voltage at NO
ron
Resistance between COM and NC or COM and NO ports when the channel is ON
rpeak
Peak on-state resistance over a specified voltage range
Δron
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under
worst-case input and output conditions
INC(PWROFF)
INO(OFF)
INO(PWROFF)
Leakage current measured at the NC port during the power-down condition, V+ = 0
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under
worst-case input and output conditions
Leakage current measured at the NO port during the power-down condition, V+ = 0
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(ON)
ICOM(PWROFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
and the output (NC or NO) open
Leakage current measured at the COM port during the power-down condition, V+ = 0
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning OFF.
tBBM
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM. CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON)
CI
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to
NC). This is measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher
harmonics to the magnitude of fundamental harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
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PARAMETER MEASUREMENT INFORMATION
V+
VNC NC
COM
+
VCOM
VNO NO
Channel ON
r on +
IN
VI
ICOM
VCOM * VNO or VNC
W
I COM
VI = VIH or VIL
+
GND
Figure 14. ON-State Resistance (ron)
V+
VNC NC
COM
+
VCOM
+
VNO NO
IN
VI
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
+
GND
Figure 15. OFF-State Leakage Current
(INC(OFF), INC(PWROFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF))
V+
VNC NC
COM
+
VNO NO
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 16. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON))
16
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V+
Capacitance
Meter
VNC
NC
VNO
NO
VBIAS = V+ or GND
VI = V+ or GND
VCOM COM
VBIAS
VI
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
IN
GND
Figure 17. Capacitance (CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON))
V+
VCOM
NC or NO
VNC or VNO
NC or NO
CL(2)
TEST
RL
CL
VCOM
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
COM
RL
IN
VI
Logic
Input(1)
CL(2)
GND
RL
V+
Logic
Input
(VI)
50%
50%
0
tON
Switch
Output
(VNC or VNO)
(1)
(2)
tOFF
90%
90%
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
Figure 18. Turn-On (tON) and Turn-Off Time (tOFF)
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V+
NC or NO
V+
Logic
Input
(VI)
VNC or VNO
VCOM
50%
0
COM
NC or NO
CL(2)
VI
IN
(2)
90%
90%
tBBM
Logic
Input(1)
(1)
Switch
Output
(VCOM)
RL
VNC or VNO = V+
RL = 50 Ω
CL = 35 pF
GND
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
Figure 19. Break-Before-Make Time (tBBM)
V+
Network Analyzer
50 W
VNC
NC
Channel ON: NC to COM
COM
Source
Signal
VCOM
VI = V+ or GND
NO
Network Analyzer Setup
50 W
VI
+
IN
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 20. Bandwidth (BW)
18
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V+
Network Analyzer
Channel OFF: NC to COM
50 W
VNC
NC
VI = V+ or GND
COM
Source
Signal
50 W
VCOM
NO
Network Analyzer Setup
IN
Source Power = 0 dBm
(632-mV P-P at 50-W load)
VI
50 W
+
GND
DC Bias = 350 mV
Figure 21. OFF Isolation (OISO)
V+
Network Analyzer
Channel ON: NC to COM
50 W
VNC
Channel OFF: NO to COM
NC
VCOM
Source
Signal
VNO
NO
VI
50 W
VI = V+ or GND
+
50 W
IN
GND
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
Figure 22. Crosstalk (XTALK)
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V+
RGEN
VGEN
Logic
Input
(VI)
OFF
ON
OFF V
IL
NC or NO
COM
+
VIH
VCOM
∆VCOM
VCOM
NC or NO
CL(2)
VI
VGEN = 0 to V+
IN
Logic
Input(1)
(1)
(2)
RGEN = 0
CL = 1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
GND
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
Figure 23. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V+ P-P
VI = VIH or VIL
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+/2
V+
Audio Analyzer
RL
10 mF
Source
Signal
10 mF
NO
COM
600 W
600 W
CL(1)
VI
IN
GND
600 W
(1)
CL includes probe and jig capacitance.
Figure 24. Total Harmonic Distortion (THD)
20
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PACKAGE OPTION ADDENDUM
www.ti.com
8-Dec-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TS5A23159DGSR
ACTIVE
MSOP
DGS
10
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23159DGSRE4
ACTIVE
MSOP
DGS
10
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23159DGSRG4
ACTIVE
MSOP
DGS
10
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23159DGST
ACTIVE
MSOP
DGS
10
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23159DGSTE4
ACTIVE
MSOP
DGS
10
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23159DGSTG4
ACTIVE
MSOP
DGS
10
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23159RSER
ACTIVE
UQFN
RSE
10
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23159RSERG4
ACTIVE
UQFN
RSE
10
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Dec-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TS5A23159DGSR
MSOP
DGS
10
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
TS5A23159RSER
UQFN
RSE
10
3000
180.0
9.2
1.68
2.13
0.76
4.0
8.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Dec-2009
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TS5A23159DGSR
MSOP
DGS
10
2500
358.0
335.0
35.0
TS5A23159RSER
UQFN
RSE
10
3000
202.0
201.0
28.0
Pack Materials-Page 2
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