MICROCHIP AN232

AN232
Low Frequency Magnetic Transmitter Design
Author:
Ruan Lourens
Microchip Technology Inc.
INTRODUCTION
Low frequency magnetic communications (LFMC) is a
viable “wireless” communications alternative to traditional radio frequency (RF) or Infrared communications. It is well suited for certain applications when
considering some of the characteristics of the topology.
Some of the main advantages of using low frequency
magnetic communications are:
• Good field penetration capabilities - Can penetrate non-magnetic materials such as water,
concrete, plastic, etc. (no line-of-sight required).
• Limited and precise control of range - This may be
a disadvantage if long range is required, but for
certain applications this is a big advantage where
limited or fixed range is required. For example, it
is useful in automotive communications, or invisible fence control such as required for pets or
water safety around pools.
• Low power designs are possible, especially on
the receiver side. This factor makes LFMC very
attractive for PKE (Passive Keyless Entry), where
the key fob constantly “listens” for a valid car and
the device needs to be powered by small lithium
batteries with years of useful battery life. It is useful in TPM (Tire Pressure Monitoring) where the
sensor is awakened by a low frequency signal to
preserve battery life.
• Low frequency design techniques (i.e., relatively
low frequency compared to RF) allow the
designer to use low frequency analog tools and
building blocks. The designer has the freedom to
use regular Op Amps, comparators, and a general-purpose oscilloscope.
• Energy transfer - It is possible to power a receiver
from the magnetic field. A good example is RFID,
or alternatively, a low voltage back-up.
• Low cost - A low cost transceiver can easily be
implemented by adding a resonant tank (LC) to a
microcontroller with a PWM and comparator.
 2002 Microchip Technology Inc.
ABOUT THIS APPLICATION NOTE
This Application Note covers some basic aspects to
consider when designing the transmitter portion of a
LFMC link, such as:
• A description of the components that comprise the
LFMC link.
• Explanation of the magnetic basics and assumptions made in the Application Note.
• Calculating the generated field strength that is
inversely proportional to the cube of the distance.
• A practical method for generating a magnetic field
is to create a serial resonant tank circuit.
• Data transfer is, in turn, accomplished by amplitude modulation of the field.
• Basic data formats that can be used in this kind of
application.
• A description of a typical drive circuitry to generate the LFMC field.
LFMC LINK COMPONENTS
A LFMC link (see Figure 1) in its most basic form consists of a field generation source transmitter and a
magnetic sensor that is sensitive to the generated field.
Thus, there needs to be a field propagation path to
“link” the transmitter and receiver. The propagating
medium plays a major role in the performance of the
communications link. It should be stressed that magnetic field behavior is not the same for electromagnetic
waves normally associated with RF communications.
Electromagnetic waves propagate for long distances in
free space. The RF electromagnetic wave is, however,
susceptible to scattering and distortion. Magnetic field
lines, however, are less prone to distortion and known
to penetrate water very well. A magnetic field does
attenuate much more rapidly when compared to an
electromagnetic wave.
This document focuses primarily on serial resonant
tanks as a field transmission source. The tank consists
of an air-coiled inductor and capacitor. Signal detection
is typically accomplished with a parallel resonant tank.
DS00232A-page 1
AN232
To increase sensitivity, one ensures that the transmitter
(TX) tank and receiver (RX) tank resonant frequencies
are the same as the desired magnetic field frequency.
Another aspect to bear in mind is that sensitivity is
dependant on the angle between coil face and the field
lines. Maximum response is obtained when the lines
pass through the coil perpendicularly, as shown in
Figure 1.
FIGURE 1:
ALIGNMENT OF FIELD
LINES WITH COIL FACES
Field Lines
Source
V
Meter
The TX and RX coils can be thought of as a weaklycoupled transformer, across which data may be transmitted by modulating the source (or transmitter) and
detecting the modulated signal at the receiver.
MAGNETISM BASICS
It is important to note the difference between a magnetic field/electric field versus an electromagnetic
wave. A magnetic field is a result of electrical charge
in motion, or a magnetic dipole. One also only gets
magnetic dipoles and not monopoles, as is the case for
electrical particles. A magnetic field can, therefore, be
represented by field lines that form continuous loops
that never cross each other.
Electric fields, on the other hand, are the result of a
distributed electrical charge. What both magnetic and
electric fields share in common is that the field strength
of both fields attenuates at a rate of 1/r3 when the
source geometry is assumed to be a point source.
What this means is that the field intensity at a distance
2X away from the source is 1/8th of the field intensity
measured at a distance X from the source.
However, an electromagnetic wave reacts quite differently than the magnetic or electric field. Assuming the
same point source, the electromagnetic wave propagates with a decay rate of 1/r. Thus, at a distance of 2X
from the point source, the field intensity is only 1/2 compared to that measured at a distance of X from the
source. This means that a magnetic field decays much
more rapidly than an electromagnetic wave.
The magnetic field energy can be thought of as a cloud
of energy packed around the source. On the other
hand, one can imagine an RF wave as a sphere radiating outward from the source at the speed of light, with
the wave energy spread out across the outer surface of
the sphere.
DS00232A-page 2
The question then is; what is the link between magnetic/electric fields and electromagnetic waves?
To find the answer, we need to consider some properties of both magnetic and electric fields. The first is that
a time-varying electric field induces a magnetic field
and, conversely, that a time-varying magnetic field
induces an electric field. These are special cases of
Amperes and Faraday’s laws, respectively. Therefore,
a time-varying field of either kind induces and reinforces a field of the other kind.
If the signal wavelength (magnetic or electric)
approaches the dimension of the antenna, the magnetic electric reinforcement becomes strong enough to
allow for electromagnetic wave propagation. For an
antenna that is very small compared to the signal
wavelength, one does not have an efficient propagating
wave decaying at 1/r; instead, one has an attenuating
field that falls off at 1/r.3
The effect, however, is negligible if the antenna dimensions are small relative to the wavelength of the
exciting signal. The wavelength of a signal can be
calculated using Equation 1, and at 125 kHz is a long
length of 2.4 km!
EQUATION 1:
λ=
c
[meters]
ƒ
c = 3 x 108 m/s
An antenna approaching this dimension is impractical,
but at 500 MHz the wavelength is only 60 cm.
Higher frequency antenna dimensions are thus much
more practical and a true propagating wave is easily
realizable.
.
Note:
For LFMC, a small component of the total
energy is in the form of an electromagnetic
wave, but that is negligible compared to
the magnetic energy of a 125 kHz magnetic antenna.
Calculating The Magnetic Field Strength
For most LFMC applications when calculating field
strength, a magnetic field is generated by a base station by setting up an oscillatory current in a series RLC
network at a typical resonant frequency of 125 kHz.
The current passing through the inductor creates a surrounding magnetic field according to Ampere’s Law.
Using Equation 2, one can calculate the absolute
magnetic field strength B at a point P from the radiating
coil, as shown in Figure 2.
 2002 Microchip Technology Inc.
AN232
EQUATION 2:
2
Bp
2
ω o INa
ω o INa
- ≈ ------------------ [ ( Weber ) ⁄ m ]
= ------------------------------3
⁄
2
3
2
2
2r
2(a + r )
Serial Resonance
A typical serial resonant tank circuit is shown in
Figure 3.
where
ωο = frequency in [Rad/S]
FIGURE 3:
I = Current [A]
N = Number of turns
a = radius of coil [m]
r = distance from coil [m]
FIGURE 2:
well. Adding a core has the effect of increasing the
effective surface area, enabling one to reduce the
physical size of the coil.
SERIAL RESONANT TANK
CIRCUIT
L
C
IS
CALCULATING
MAGNETIC FIELD
STRENGTH
+
-
VS
R
X
current
flow
The formulas for calculating serial resonant tank values
are shown in Equation 4.
a
r
Y
EQUATION 4:
P
coil
Z
Note:
For r >> a, the field strength falls of with
1/r3.
The field strength is therefore proportional to the:
As one moves away from the source with r>>a the simplified equation again shows the characteristic 1/r3
attenuation. For practical reasons, the designer may
prefer to use the voltage of the inductor (VL) to calculate
the field strength using Equation 3.
EQUATION 3:
VL a 1
B ≈ -----------------  ----3
2ω o πN  r 
with L ≈
(a)
I max
(b)
VL max = VC max = Q ⋅ Vs
µοπa
N2
for r>>a
(c)
ω0 ω0 L
1
=
=
β
R
ω 0CR
β =ω 2−ω 1= R / L
Q=
• Number of turns (N)
• Current (I)
• Area of the loop (a2)
1
= ω0
LC
= Vs / R
2π ⋅ F0 =
(d)
(e)
Note that R represents all losses such as resistive,
magnetic, etc. A short description of each equation
given above is as follows:
(a) Used to calculate the resonant frequency of the
tank.
(b) Gives the maximum serial current as a function of
applied voltage (note this is not the same as inductor or
capacitor current) and effective serial resistance.
(c) Shows that the inductor and capacitor voltage is
equal to Q times the source voltage at resonance.
(d) Shows all the various ways to calculate the Quality
Factor (Q) of the tank circuit.
(e) Used to calculate the 3 dB bandwidth.
From Equation 3 with a given coil voltage at some distance from the coil, one now finds that B is inversely
proportional to N. This is due to the fact that the current
increases at the rate of 1/N2 with a given coil voltage.
Only the case of an air-coiled inductor has been
described, but one can use a ferrite-cored inductor as
 2002 Microchip Technology Inc.
Figure 4 shows the frequency response curve for a
typical serial resonant tank circuit.
DS00232A-page 3
AN232
FIGURE 4:
FREQUENCY RESPONSE CURVE FOR RESONANT TANK CIRCUIT
25
Serial
F0
IM = VS/R
20
F1
F2
V (mV)
15
Vo
-3dB
10
IM
------2
5
139600
138700
137800
136900
136000
135100
134200
133300
132400
131500
ω2
130600
129700
128800
127900
127000
ω0
126100
125200
124300
123400
122500
ω1
121600
120700
119800
118900
118000
117100
116200
115300
114400
113500
112600
111700
F
110800
0
F (Hz)
MANUFACTURING TOLERANCES
A good rule of thumb is to stay within the -3 dB limits,
giving component tolerances by Equation 5.
EQUATION 5:
Q≤
Tcap
1
+ Tind
TCAP and TIND are the individual manufacturing tolerances for capacitance and inductance. For 2% parts, a
Q of 20 works very well. Lower tolerance components
may be used at the expense of sensitivity, and thus
yielding a lower range. The corresponding final design
must accommodate a wider bandwidth and will,
therefore, have a lower response.
Data Formats
In designing a LFMC system, one has the choice of
implementing any one of a large variety of modulation
formats. On-Off Keying (OOK) lends itself well to realizing a practical and reliable system. With OOK, the
signal is modulated by simply turning the field
generation source on and off, depending on a chosen
data format.
DS00232A-page 4
An example of a half bridge drive systems dynamic
response is shown in Figure 5. Figure 5 shows the
typical response when turning a tank circuit on (i.e.,
applying a drive signal) and, after some time, switching
the tank off again. It can be seen that the oscillations
amplitude increases rapidly upon start-up. It then
increases up to a maximum amplitude as predicted by
Equation 4. There is some finite time required for the
tank to start-up and reach the eventual maximum
amplitude. There is similarly a finite time required for
the tank oscillations to decrease to some desired level.
The rise and fall times will be the predominant factors
in choosing a baud rate. Other factors are more concerned with receiver design and choice of AGC (Automatic Gain Control) topology. LFte is the elemental
period used in LF communication, and a practical value
is 400 µs or longer.
The Manchester, PWM, and PPM data formats are
shown in Figure 6. Manchester has the advantage of
having a constant duty cycle and more efficient data
rate. PWM encoding, on the other hand, simplifies the
receiver decoding and improves the bit error rate.
When designing an LFMC system, one should keep in
mind that it will be exposed to noisy environments. It is
a good idea to incorporate some error correction and
detection scheme upon implementing a communication protocol.
 2002 Microchip Technology Inc.
AN232
FIGURE 5:
DATA BIT RISE AND FALL TIMES
Control
130 µs
200 µs
Residual
Field
Start
FIGURE 6:
Stop
DATA MODULATION FORMATS
Manchester Format:
PWM Format:
PPM Format:
1 LFTE
LOGIC ’0’
1 LFTE
LOGIC ’0’
1 LFTE
LOGIC ’0’
1 LFTE
LOGIC ’1’
LOGIC ’1’
1 LFTE
 2002 Microchip Technology Inc.
1 LFTE
1 LFTE
LOGIC ’1’
1 LFTE
1 LFTE
DS00232A-page 5
AN232
DRIVE CIRCUITRY
One of the most efficient methods to drive the resonant
tank is a class - D drive circuit in either a full or half
bridge mode. Figure 7 shows a typical 1/2 bridge implementation. One gets very good results with a 1/2
bridge, and it has the advantage of being low cost and
it is easy to implement.
The use of a serial resonant tank circuit becomes
clearer in this section. A high Q serial resonant circuit
has its lowest impedance at resonance. The current
passing through the antenna coil shown in Figure 7
consists mostly of the fundamental current component,
although the drive circuit uses square wave excitation
that has very high harmonic content.
FIGURE 7:
SQUARE WAVE
EXCITATION
V+
Q = 25
Vs
+
VL
-
VPP = 300V
VL =
A very economical and straightforward drive circuit can
be realized with the circuit shown in Figure 8.
FIGURE 8:
SIMPLIFIED DRIVE
CIRCUIT
+12V
10 µF
PWM
TC4422
400 VDC
drive
signal
5V
L = 160 µH
a = 25 mm
wire = 26 AWG
N = 41
Microchip’s high-current MOSFET drivers (such as
TC4421/TC4422) are very suitable for this application.
The device takes care of all the necessary level translations and deadband control, resulting in a very efficient and fast output, thereby reducing cost and losses.
These devices have the added advantage that they can
be directly driven from logic levels.
DS00232A-page 6
The circuit shown in Figure 7 gives 135 VRMS out
across the inductor and capacitor. It consumes
0.5 ARMS at 12V with a constant output. This means that
the average current consumption is typically 0.25 ARMS
for Manchester encoding.
The drive signal can be generated directly by the PWM
unit on most PICmicro® microcontrollers such as a
PIC16F627 microcontroller. For a device operating at
20 MHz, one can obtain a 125 kHz signal by setting the
Timer2 prescaler to 1. A period of 8 µs is then obtained
by setting the PR2 register to 39. To get a 50% duty
cycle output, set CCPR1L to 14 and CCP1CON<5:4>
to <0:0>. These settings will ensure a constant carrier.
To modulate the data, one can turn the drive signal on
and off by setting and clearing the CCP1RIL bit.
There are various transmission formats that can be
used to transfer data, but keep the rise and fall times of
the resonant tank in mind. The response for the circuit
in Figure 8 is shown in Figure 5. The drive circuit was
modulated on and off at 400 µs intervals.
Towards a Faster Response
The rise and fall times are limiting factors to shortening
LFTE from a field generation perspective. In order to
increase the baud rate, one needs to accelerate the
turn-on and/or turn-off response. Figure 9 shows a
modification of the basic circuit in Figure 7 to accomplish both a faster turn-on and turn-off time.
12V
Vs =
Be sure to use high quality capacitors with low tolerances (see ‘Calculating the Bandwidth and Q’ section
on tolerances). A good choice is Panasonic polypropylene film capacitors - ECQO(µ) series, rated at either
400V or 600V as they reduce losses and are relatively
stable over temperature variations.
The basic bridge drive circuit shown earlier took about
130 µs to reach 90% of full-scale value. The start-up
time can be decreased by starting the tank in full bridge
mode, then maintaining resonance in 1/2 bridge mode,
once full scale is reached.
This concept can be implemented (see Figure 9) by
using two FET drivers as the two halves of the full
bridge converter. The tank is started up by driving the
two 1/2 bridge drivers 180° out of phase. This effectively doubles the applied source voltage. As soon as
the full-scale amplitude is reached, the other 1/2 bridge
driver is grounded. A circuit based on two TC442X FET
drivers takes about 40 µs to reach full-scale. That is a
significant speed increase compared to the 120 µs to
reach 90% of full-scale for the standard
1/2 bridge system. Herein lies a warning: if the resonant capacitor voltage rating is not at least double the
1/2 bridge full-scale voltage swing, then care should be
taken to ensure that 1/2 bridge mode is engaged before
the output voltage swing becomes too large. A good
safety backup is to engage the 1/2 bridge after 6 full
bridge cycles, irrespective of the output voltage.
 2002 Microchip Technology Inc.
AN232
Toward Faster Turn-Off
Figure 9 shows a turn-off acceleration circuit. A triac is
used to discharge the resonant tank at turn-off. This circuit works instantaneously. The triac is typically fired at
a voltage of zero, which reduces the EMI radiation.
Note:
The design examples shown in Figure 8,
Figure 9, and Figure 10 have not been
independently tested for conformance to
FCC regulations.
The PWM bridge drive is in phase with the tank current
if the tank is properly tuned. The tank current and voltage are 90 degrees out of phase. Figure 10 shows
proper turn-off timing.
This turn-off clamp circuit also has the advantage that
there is no residual field left after turn-off. This simplifies receiver design by reducing the receiver’s AGC
functionality. A good receiver AGC is needed when
operating close to a source that does not have a turnoff clamp. The AGC circuit needs to be able to
distinguish between valid data and the residual field. If
the receiver is unable to do so, it will interpret the field
as being continuously high.
FIGURE 9:
MODIFICATION OF THE BASIC CIRCUIT
Clamp
FIGURE 10:
Enable Full
Bridge
PWM
TURN-OFF TIMING
Tank Voltage
Triac
PWM
 2002 Microchip Technology Inc.
DS00232A-page 7
AN232
BASE STATION CIRCUIT
DESCRIPTION
Power Supply
The circuit consumes roughly 0.5 ARMS when transmitting continuously in 1/2 bridge mode. It consumes
approximately double that amount of current during the
40 µs start-up. The average transmitting power consumption is 0.25 ARMS for Manchester encoding.
Instantaneous peak current is about 1.2 A. The overall
current consumption when transmitting data continuously is roughly 3 Watts, but adequate tank capacitance is needed to supply the relatively high peak
current and reduce supply ripple. C4 is the main
smoothing capacitor. A Panasonic FC series 25V
560 µF is used because of its 1.2 A ripple current
specification. C2 and C3 are local DC coupling capacitors for U2 and U3, and are 20V 0.68 µF tantilum
capacitors.
The drive circuitry (see Appendix A) consists of
TC4422 (U2) and TC4421 (U3). U3 is an inverting FET
driver and U2 is a non-inverting FET driver. U3 is the
main 1/2 bridge drive device and U2 is only used during
start-up as explained previously. During the first 5
cycles of start-up, both U2 and U3 work in tandem as a
full bridge drive circuit. In full bridge mode, U2 and U3
are driven from the PWM output via RB3. At this time,
RB4 is defined as an input and thus has no influence
on the input signal to U2.
The driver is converted to a 1/2 bridge made after the 5
start-up cycles by driving point A to ground. This is
done by changing RB4 from an input to a low level (i.e.,
zero) output. This has no influence on the signal to U3,
but it grounds U2. One can remove U2 and physically
ground point A if a fast turn-on is not required. Removing U2 also increases the efficiency and output voltage
slightly.
Communications
Serial communications is performed via the UART on
the PIC16F628, and the voltage translation is done with
a MAX232. Flow control using CTS and RTS is implemented on RB6 and RB5 respectively.
Turn-On Timing
Figure 11 shows the proper turn-on sequence referenced from the PWM output cycles.
CONCLUSION
The choice of a PIC16F628 with a PWM lends itself
towards an effective design of a low frequency magnetic transmitter circuit. In addition, the TC4421/
TC4422’s are well suited as FET driver for this type of
application. The main advantages of using low frequency magnetic transmitter design are:
Turn-Off Clamp
The turn-off clamp is realized by discharging the resonant tank through R1, R2 and a 600 V rated triac Q1.
Q1 is a Q6x3 surface mound triac from Teccor Electronics. The high tank voltages necessitate the need for
two small serial resistors. Alternatively, one can use a
single high-voltage resistor. A single PNP transistor T1
forms a gated drive circuit and is activated by driving
RB7 low. Refer to the previous section for timing
requirements. The clamp circuit ensures that no
residual energy is left in the tank, thus simplifying
receiver design (this is not needed for LFTE’s of 400 µs
or more).
FIGURE 11:
PWM (RB3)
•
•
•
•
Good field penetration
Precise range control
Low power consumption
Overall low cost
TURN-ON TIMING
0
1
2
3
4
5
6
7
TRISB.4
A
B
Full Bridge Start-Up
DS00232A-page 8
Half Bridge Mode
 2002 Microchip Technology Inc.
30 k
RB3
1k
R3
T1 10 k
+5V
U2
RB4
4422
+12V
A
600V
Q1
R2
10 Ω
R1
10 Ω
RB7
Q6x3
C2
C1
C3
4421
2N3906
R19
1k
U3
+5V
B
+12V
RB3
N/C
N/C
N/C
N/C
+12V
2
3
4
5
6
7
8
9
1
C5
47 µF 6.3V
DB-9 Standard
RS-232 Interface
9
8
7
(CTS)
5
4
3
2
1
C4
1 µF
5
4
13
8
14
7
V+
2
C2
1 µF +
RB5
RB6
+
C3
1 µF
11
T1OUT T1IN
T2OUT T2IN 10
12
R1IN R1OUT
9
R2IN R2OUT
1
C2+
C1+
3 1 µF
C2C1C5
6
V-
(RTS)
+5V
MAX232ECWE
+
C1
1 µF
J1
R1
100Ω
20 MHz XTAL
18
RA1
RA2
N/C
C7 12 pF
17
RA3
RA0
N/C
RA4/TO RA7 16
15
MCLR RA6
VSS
VDD 14
C812 pF
RB0/INT RB7 13
RB7
12
RB1
RB6
RB6
RB2
RB5 11
RB5
10
RB4
RB3
RB4
+5V
PIC16F628
C6
0.1 µF
6
U1
LM7805
C4
470 µF
+5V
VCC 16
GND
BASE STATION CIRCUIT
+
15
 2002 Microchip Technology Inc.
+
APPENDIX A:
AN232
DS00232A-page 9
AN232
NOTES:
DS00232A-page 10
 2002 Microchip Technology Inc.
Note the following details of the code protection feature on PICmicro® MCUs.
•
•
•
•
•
•
The PICmicro family meets the specifications contained in the Microchip Data Sheet.
Microchip believes that its family of PICmicro microcontrollers is one of the most secure products of its kind on the market today,
when used in the intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the PICmicro microcontroller in a manner outside the operating specifications contained in the data sheet.
The person doing so may be engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable”.
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of
our product.
If you have any further questions about this matter, please contact the local sales office nearest to you.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
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MPLAB, PIC, PICmicro, PICSTART and PRO MATE are
registered trademarks of Microchip Technology Incorporated
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All other trademarks mentioned herein are property of their
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© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
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design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
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 2002 Microchip Technology Inc.
DS00232A - page 11
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Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Rocky Mountain
China - Beijing
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-4338
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200 Fax: 86-28-86766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-82350361 Fax: 86-755-82366086
San Jose
China - Hong Kong SAR
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
New York
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology (Barbados) Inc.,
Taiwan Branch
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Austria
Microchip Technology Austria GmbH
Durisolstrasse 2
A-4600 Wels
Austria
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Steinheilstrasse 10
D-85737 Ismaning, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
08/01/02
DS00232A-page 12
 2002 Microchip Technology Inc.