GS82032AT/Q-180/166/133/100 TQFP, QFP Commercial Temp Industrial Temp Features Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipelined operation • Single Cycle Deselect (SCD) operation • 3.3 V +10%/–5% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to Interleaved Pipelined mode • Byte Write (BW) and/or Global Write (GW) operation • Common data inputs and data outputs • Clock Control, registered, address, data, and control • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC standard 100-lead TQFP or QFP package Pipeline 3-1-1-1 Flow Through 2-1-1-1 180 MHz–100 MHz 8 ns–12 ns 3.3 V VDD 3.3 V and 2.5 V I/O 64K x 32 2M Synchronous Burst SRAM tCycle tKQ IDD tCycle tKQ IDD -180 5.5 ns 3.2 ns 155 mA 9.1 ns 8 ns 100 mA -166 6 ns 3.5 ns 140 mA 10 ns 8.5 ns 90 mA -133 7.5 ns 4 ns 115 mA 12 ns 10 ns 80 mA -100 10 ns 5 ns 90 mA 15 ns 12 ns 65 mA Functional Description The function of the Data Output Register can be controlled by the user via the FT mode pin (Pin 14 in the TQFP). Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipelined mode, activating the rising-edge-triggered Data Output Register. SCD Pipelined Reads The GS82032A is an SCD (Single Cycle Deselect) pipelined synchronous SRAM. DCD (Dual Cycle Deselect) versions are also available. SCD SRAMs pipeline deselect commands one stage less than read commands. SCD RAMs begin turning off their outputs immediately after the deselect command has been captured in the input registers. Byte Write and Global Write Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs. Sleep Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mode. Core and Interface Voltages Applications The GS82032A is a 2,097,152-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. The GS82032A operates on a 3.3 V power supply and all inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate output power (VDDQ) pins are used to decouple output noise from the internal circuit. Controls Addresses, data I/Os, chip enables (E1, E2, E3), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance. Rev: 1.09 7/2002 1/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 A6 A7 E1 E2 BD BC BB BA E3 VDD VSS CK GW BW G ADSC ADSP ADV A8 A9 GS82032A 100-Pin TQFP and QFP Pinout NC DQC8 DQC7 VDDQ NC DQB8 DQB7 VDDQ VSS DQB6 DQB5 DQB4 DQB3 VSS VDDQ DQB2 DQB1 VSS NC VDD ZZ DQA1 DQA2 VDDQ VSS DQA3 DQA4 DQA5 DQA6 VSS VDDQ DQA7 DQA8 NC LBO A5 A4 A3 A2 A1 A0 NC NC VSS VDD NC NC A10 A11 A12 A13 A14 A15 NC VSS DQC6 DQC5 DQC4 DQC3 VSS VDDQ DQC2 DQC1 FT VDD NC VSS DQD1 DQD2 VDDQ VSS DQD3 DQD4 DQD5 DQD6 VSS VDDQ DQD7 DQD8 NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 64K x 32 10 71 11 Top View 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Rev: 1.09 7/2002 2/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 TQFP Pin Description Pin Location Symbol Type Description 37, 36 A 0, A 1 I Address field LSBs and Address Counter preset Inputs 35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46, 47, 48, 49 A2–A15 I Address Inputs 52, 53, 56, 57, 58, 59, 62, 63 68, 69, 72, 73, 74, 75, 78, 79 2, 3, 6, 7, 8, 9, 12, 13 18, 19, 22, 23, 24, 25, 28, 29 DQA1–DQA8 DQB1–DQB8 DQC1–DQC8 DQD1–DQD8 I/O Data Input and Output pins 16, 38, 39, 42, 43, 66, 50, 51, 80, 1, 30 NC 87 BW I Byte Write—Writes all enabled bytes; active low 93, 94 BA , BB I Byte Write Enable for DQA, DQB Data I/Os; active low 95, 96 BC , BD I Byte Write Enable for DQC, DQD Data I/Os; active low 89 CK I Clock Input Signal; active high 88 GW I Global Write Enable—Writes all bytes; active low 98, 92 E 1, E 3 I Chip Enable; active low 97 E2 I Chip Enable; active high 86 G I Output Enable; active low 83 ADV I Burst address counter advance enable; active low 84, 85 ADSP, ADSC I Address Strobe (Processor, Cache Controller); active low 64 ZZ I Sleep Mode control; active high 14 FT I Flow Through or Pipeline mode; active low 31 LBO I Linear Burst Order mode; active low 15, 41, 65, 91 VDD I Core power supply 5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90 VSS I I/O and Core Ground 4, 11, 20, 27, 54, 61, 70, 77 VDDQ I Output driver power supply Rev: 1.09 7/2002 No Connect 3/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 GS82032A Block Diagram A0–An Register D Q A0 A0 D0 A1 Q0 A1 D1 Q1 Counter Load A LBO ADV Memory Array CK ADSC ADSP Q D Register GW BW BA D Q Register D 32 Q BB 32 4 Register D Q D Q D Register Q Q Register D Register BC BD Register D Q Register E1 E2 E3 D Q Register D Q FT G ZZ Rev: 1.09 7/2002 Power Down DQx1–DQx8 Control 4/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Mode Pin Functions Mode Name Pin Name Burst Order Control LBO Output Register Control FT Power Down Control ZZ State Function L Linear Burst H or NC Interleaved Burst L Flow Through H or NC Pipeline L or NC Active H Standby, IDD = ISB Note: There are pull-up devices on LBO and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will operate in the default states as specified in the above table. Burst Counter Sequences Interleaved Burst Sequence Linear Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] 1st address 00 01 10 11 2nd address 01 10 11 3rd address 10 11 4th address 11 00 A[1:0] A[1:0] A[1:0] A[1:0] 1st address 00 01 10 11 00 2nd address 01 00 11 10 00 01 3rd address 10 11 00 01 01 10 4th address 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock. Note: The burst counter wraps to initial state on the 5th clock. Byte Write Truth Table Function GW BW BA BB BC BD Notes Read H H X X X X 1 Read H L H H H H 1 Write byte A H L L H H H 2, 3 Write byte B H L H L H H 2, 3 Write byte C H L H H L H 2, 3, 4 Write byte D H L H H H L 2, 3, 4 Write all bytes H L L L L L 2, 3, 4 Write all bytes L X X X X X Notes: 1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs. 2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes. 3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs. Rev: 1.09 7/2002 5/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Synchronous Truth Table Operation Address Used State Diagram Key5 E1 E2 Deselect Cycle, Power Down None X H X X Deselect Cycle, Power Down None X L F Deselect Cycle, Power Down None X L Read Cycle, Begin Burst External R Read Cycle, Begin Burst External Write Cycle, Begin Burst ADV W3 DQ4 L X X High-Z L X X X High-Z F H L X X High-Z L T L X X X Q R L T H L X F Q External W L T H L X T D Read Cycle, Continue Burst Next CR X X H H L F Q Read Cycle, Continue Burst Next CR H X X H L F Q Write Cycle, Continue Burst Next CW X X H H L T D Write Cycle, Continue Burst Next CW H X X H L T D Read Cycle, Suspend Burst Current X X H H H F Q Read Cycle, Suspend Burst Current H X X H H F Q Write Cycle, Suspend Burst Current X X H H H T D Write Cycle, Suspend Burst Current H X X H H T D ADSP ADSC Notes: 1. X = Don’t Care, H = High, L = Low 2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1 3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding 4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown as “Q” in the Truth Table above). 5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish basic synchronous or synchronous burst operations and may be avoided for simplicity. 6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above. 7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above. Rev: 1.09 7/2002 6/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Simplified State Diagram X Deselect W R Simple Burst Synchronous Operation Simple Synchronous Operation W X R R First Write CW First Read CR CR W X R R X Burst Write Burst Read X CR CW CR Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, E3) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and that ADSP is tied high and ADSC is tied low. 3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and assumes ADSP is tied high and ADV is tied low. Rev: 1.09 7/2002 7/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Simplified State Diagram with G X Deselect W R W X R R First Write CR CW W CW W X First Read X CR R Burst Write R CR CW W Burst Read X CW CR Notes: 1. The diagram shows supported (tested) synchronous state transitions, plus supported transitions that depend upon the use of G. 2. Use of “Dummy Reads” (Read Cycles with G high) may be used to make the transition from Read cycles to Write cycles without passing through a Deselect cycle. Dummy Read cycles increment the address counter just like normal Read cycles. 3. Transitions shown in gray assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet Data Input Set Up Time. Rev: 1.09 7/2002 8/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Absolute Maximum Ratings (All voltages reference to VSS) Symbol Description Value Unit VDD Voltage on VDD Pins –0.5 to 4.6 V VDDQ Voltage in VDDQ Pins –0.5 to VDD V VCK Voltage on Clock Input Pin –0.5 to 6 V VI/O Voltage on I/O Pins –0.5 to VDDQ+0.5 (≤ 4.6 V max.) V VIN Voltage on Other Input Pins –0.5 to VDD+0.5 (≤ 4.6 V max.) V IIN Input Current on Any Pin +/–20 mA IOUT Output Current on Any I/O Pin +/–20 mA PD Package Power Dissipation 1.5 W TSTG Storage Temperature –55 to 125 o TBIAS Temperature Under Bias –55 to 125 oC C Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Recommended Operating Conditions Parameter Symbol Min. Typ. Max. Unit Notes Supply Voltage VDD 3.135 3.3 3.6 V I/O Supply Voltage VDDQ 2.375 2.5 VDD V 1 Input High Voltage VIH 1.7 — VDD+0.3 V 2 Input Low Voltage VIL –0.3 — 0.8 V 2 Ambient Temperature (Commercial Range Versions) TA 0 25 70 °C 3 TA Ambient Temperature (Industrial Range Versions) –40 25 85 °C 3 Notes: 1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V ≤ VDDQ ≤ 2.375 V (i.e., 2.5 V I/O) and 3.6 V ≤ VDDQ ≤ 3.135 V (i.e., 3.3 V I/O) and quoted at whichever condition is worst case. 2. This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers. 3. Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 4. Input Under/overshoot voltage must be –2 V > Vi < VDD+2 V with a pulse width not to exceed 20% tKC. Rev: 1.09 7/2002 9/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Undershoot Measurement and Timing Overshoot Measurement and Timing VIH 20% tKC VDD +- 2.0 V VSS 50% 50% VDD VSS – 2.0 V 20% tKC VIL Capacitance (TA = 25°C, f = 1 MHZ, VDD = 3.3 V) Parameter Symbol Test conditions Typ. Max. Unit Control Input Capacitance CI VDD = 3.3 V 3 4 pF Input Capacitance CIN VIN = 0 V 4 5 pF COUT VOUT = 0 V 6 7 pF Output Capacitance Note: This parameter is sample tested. Package Thermal Characteristics Rating Layer Board Symbol TQFP Max QFP Max Unit Notes Junction to Ambient (at 200 lfm) single RΘJA 40 TBD °C/W 1,2,4 Junction to Ambient (at 200 lfm) four RΘJA 24 TBD °C/W 1,2,4 RΘJC 9 TBD °C/W 3,4 Junction to Case (TOP) Notes: 1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temperature air flow, board density, and PCB thermal resistance. 2. SCMI G-38-87 3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1 4. For x18 configuration, consult factory. Rev: 1.09 7/2002 10/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 AC Test Conditions Parameter Conditions Input high level 2.3 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level 1.25 V Output reference level 1.25 V Output load Fig. 1& 2 Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Output Load 2 for tLZ, tHZ, tOLZ and tOHZ 4. Device is deselected as defined by the Truth Table. Output Load 2 Output Load 1 DQ 2.5 V 50Ω 30pF* 225Ω DQ 5pF* VT = 1.25 V 225Ω * Distributed Test Jig Capacitance DC Electrical Characteristics Parameter Symbol Test Conditions Min Max IIL VIN = 0 to VDD –1 uA 1 uA ZZ Input Current IINZZ VDD ≥ VIN ≥ VIH 0V ≤ VIN ≤ VIH –1 uA –1 uA 1 uA 300 uA Mode Pin Input Current IINM VDD ≥ VIN ≥ VIL 0V ≤ VIN ≤ VIL –300 uA –1 uA 1 uA 1 uA Output Leakage Current IOL Output Disable, VOUT = 0 to VDD –1 uA 1 uA Output High Voltage VOH IOH = –4 mA, VDDQ = 2.375 V 1.7 V Output High Voltage VOH IOH = –4 mA, VDDQ = 3.135 V 2.4 V Output Low Voltage VOL IOL = 4 mA Input Leakage Current (except mode pins) Rev: 1.09 7/2002 11/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. 0.4 V © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Operating Currents -180 Parameter Test Conditions Operating Current Device Selected; All other inputs ≥VIH or ≤ VIL Output open Standby Current ZZ ≥ VDD – 0.2 V Deselect Current Rev: 1.09 7/2002 Device Deselected; All other inputs ≥ VIH or ≤ VIL -166 -133 -100 0 to 70°C –40 to 85°C 0 to 70°C –40 to 85°C 0 to 70°C –40 to 85°C 0 to 70°C –40 to 85°C Unit IDD Pipeline 155 160 140 145 115 120 90 95 mA IDD Flow Through 100 105 90 95 80 85 65 70 mA ISB Flow Through 10 15 10 15 10 15 10 15 mA IDD Pipeline 35 40 30 35 30 35 25 30 mA IDD Flow Through 25 30 25 30 20 25 20 25 mA Symbol 12/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 AC Electrical Characteristics Pipeline Flow Through Parameter Symbol Clock Cycle Time -180 -166 -133 -100 Unit Min Max Min Max Min Max Min Max tKC 5.5 — 6 — 7.5 — 10 — ns Clock to Output Valid tKQ — 3.2 — 3.5 — 4 — 5 ns Clock to Output Invalid tKQX 1.5 — 1.5 — 1.5 — 1.5 — ns Clock to Output in Low-Z tLZ1 1.5 — 1.5 — 1.5 — 1.5 — ns Clock Cycle Time tKC 9.1 — 10 — 12 — 15 — ns Clock to Output Valid tKQ — 8 — 8.5 — 10 — 12 ns Clock to Output Invalid tKQX 3 — 3 — 3 — 3 — ns Clock to Output in Low-Z tLZ1 3 — 3 — 3 — 3 — ns Clock HIGH Time tKH 1.3 — 1.3 — 1.3 — 1.3 — ns Clock LOW Time tKL 1.5 — 1.5 — 1.5 — 1.5 — ns Clock to Output in High-Z tHZ1 1.5 3.2 1.5 3.5 1.5 4 1.5 5 ns G to Output Valid tOE — 3.2 — 3.5 — 4 — 5 ns G to output in Low-Z 1 tOLZ 0 — 0 — 0 — 0 — ns G to output in High-Z tOHZ1 — 3.2 — 3.5 — 4 — 5 ns Setup time tS 1.5 — 1.5 — 1.5 — 1.5 — ns Hold time tH 0.5 — 0.5 — 0.5 — 0.5 — ns ZZ setup time tZZS2 5 — 5 — 5 — 5 — ns ZZ hold time tZZH2 1 — 1 — 1 — 1 — ns ZZ recovery tZZR 20 — 20 — 20 — 20 — ns Notes: 1. These parameters are sampled and are not 100% tested. 2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.09 7/2002 13/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Write Cycle Timing Single Write Burst Write Deselected Write CK tS tH tKH tKL tKC ADSP is blocked by E1 inactive ADSP tS tH ADSC initiated write ADSC tS tH ADV tS tH A0–An ADV must be inactive for ADSP Write WR2 WR1 WR3 tS tH GW tS tH BW tS tH BA–BD WR1 WR1 WR2 tS tH WR3 WR3 E1 masks ADSP E1 tS tH Deselected with E2 E2 tS tH E2 and E3 only sampled with ADSP or ADSC E3 G tS tH DQA–DQD Rev: 1.09 7/2002 Hi-Z Write specified byte for 2A and all bytes for 2B, 2C& 2D D1A D2A D2B D2C D2D 14/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. D3A © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Flow Through Read Cycle Timing Single Read Burst Read tKL CK tKH tS tH ADSP tKC ADSP is blocked by E1 inactive tS tH ADSC initiated read ADSC tS tH Suspend Burst Suspend Burst ADV tS tH A0–An RD1 RD2 RD3 tS tH tS tH GW BW BA–BD tS tH E1 masks ADSP E1 tS tH E2 and E3 only sampled with ADSP or ADSC Deselected with E2 E2 tS tH E3 tOE tOHZ G tKQX tOLZ DQA–DQD Hi-Z Q1A Q2A tKQX Q2B Q2C Q3A tLZ tHZ tKQ Rev: 1.09 7/2002 Q2D 15/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Flow Through Read-Write Cycle Timing Single Write Single Read Burst Read CK tS tH tKC tKH tKL ADSP is blocked by E inactive ADSP tS tH ADSC initiated read ADSC tS tH ADV tS tH A0–An WR1 RD1 RD2 tS tH GW tH tS BW tS tH BA–BD WR1 tS tH E1 masks ADSP E1 tS tH E2 and E3 only sampled with ADSP and ADSC E2 tS tH Deselected with E3 E3 tOE tOHZ G DQA–DQD Hi-Z tS tKQ Q1A tH D1A Q2A Q2B Q2C Q2D Q2A Burst wrap around to it’s initial state Rev: 1.09 7/2002 16/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Pipelined SCD Read Cycle Timing Single Read Burst Read CK tKH tS tH tKL tKC ADSP ADSP is blocked by E1 inactive tS tH ADSC initiated read ADSC tS tH Suspend Burst ADV tS tH An RD2 RD1 RD3 tS tH tS tH GW BW BWA–BWD tS tH E1 masks ADSP E1 tS tH E2 and E3 only sampled with ADSP or ADSC Deselected with E2 E2 tS tH E3 tOE G DQA–DQD tOHZ Hi-Z tKQX tKQX tOLZ Q1A tLZ Q2A Q2B Q2C Q2D Q3A tHZ tKQ Rev: 1.09 7/2002 17/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Pipelined SCD Read - Write Cycle Timing Single Write Single Read Burst Read tKL CK tS tH tKH tKC ADSP is blocked by E inactive ADSP tS tH ADSC ADSC initiated read tS tH ADV tS tH A0–An WR1 RD1 RD2 tS tH GW tS tH BW tS tH BA–BWD WR1 tS tH E1 masks ADSP E1 tS tH E2 and E3 only sampled with ADSP and ADSC E2 tS tH Deselected with E3 E3 tOE tOHZ G DQA–DQD Rev: 1.09 7/2002 Hi-Z tS tH tKQ Q1A D1A Q2A 18/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Q2B Q2C Q2D © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 CK tS tH tKC tKH tKL ADSP ADSC tZZS ZZ ~ ~ ~ ~ ~ ~~ ~ ~ ~ ~ ~ Sleep Mode Timing Diagram tZZH tZZR Snooze Application Tips Single and Dual Cycle Deselect SCD devices force the use of “dummy read cycles” (read cycles that are launched normally, but that are ended with the output drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance, but their use usually assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address boundary crossings), but greater care must be exercised to avoid excessive bus contention. Rev: 1.09 7/2002 19/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 GS82032A Output Driver Characteristics 60 Pull Down Drivers 40 20 VDDQ I Out 0 I Out (mA) VOut VSS -20 -40 Pull Up Drivers -60 -80 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 V Out (Pull Dow n) VDDQ - V Out (Pull Up) 3.6V PD LD Rev: 1.09 7/2002 3.3V PD LD 3.1V PD LD 3.1V PU LD 3.3V PU LD 20/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. 3.6V PU LD © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 TQFP and QFP Package Drawing θ L c Pin 1 L1 D D1 e b A1 A2 E1 Y E Symbol Description Min. TQFP Nom. A1 Standoff 0.05 0.10 0.15 0.25 0.35 0.45 A2 Body Thickness 1.35 1.40 1.45 2.55 2.72 2.90 b Lead Width 0.20 0.30 0.40 0.20 0.30 0.40 c Lead Thickness 0.09 — 0.20 0.10 0.15 0.20 D Terminal Dimension 21.9 22.0 22.1 22.95 23.2 23.45 D1 Package Body 19.9 20.0 20.1 19.9 20.0 20.1 E Terminal Dimension 15.9 16.0 16.1 17.0 17.2 17.4 E1 Package Body 13.9 14.0 14.1 13.9 14.0 14.1 e Lead Pitch — 0.65 — — 0.65 — L Foot Length 0.45 0.60 0.75 .60 0.80 1.00 L1 Lead Length — 1.00 — — 1.60 — Y Coplanarity — — 0.10 — — 0.10 θ Lead Angle 0° — 7° 0° — 7° Max Min. QFP Nom. Max Notes: 1. All dimensions are in millimeters (mm). 2. Package width and length do not include mold protrusion. Rev: 1.09 7/2002 21/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Ordering Information for GSI Synchronous Burst RAMs Speed2 TA (MHz/ns) 3 Org Part Number1 Type Package 64K x 32 GS82032AT-180 Pipeline/Flow Through TQFP 180/8 C 64K x 32 GS82032AT-166 Pipeline/Flow Through TQFP 166/8.5 C 64K x 32 GS82032AT-133 Pipeline/Flow Through TQFP 133/10 C 64K x 32 GS82032AT-4 Pipeline/Flow Through TQFP 133/10 C 64K x 32 GS82032AT-5 Pipeline/Flow Through TQFP 100/12 C 64K x 32 GS82032AT-6 Pipeline/Flow Through TQFP 100/12 C 64K x 32 GS82032AT-180I Pipeline/Flow Through TQFP 180/8 I 64K x 32 GS82032AT-166I Pipeline/Flow Through TQFP 166/8.5 I 64K x 32 GS82032AT-133I Pipeline/Flow Through TQFP 133/10 I 64K x 32 GS82032AT-4I Pipeline/Flow Through TQFP 133/10 I 64K x 32 GS82032AT-5I Pipeline/Flow Through TQFP 100/12 I 64K x 32 GS82032AT-6I Pipeline/Flow Through TQFP 100/12 I 64K x 32 GS82032AQ-180 Pipeline/Flow Through QFP 180/8 C 64K x 32 GS82032AQ-166 Pipeline/Flow Through QFP 166/8.5 C 64K x 32 GS82032AQ-133 Pipeline/Flow Through QFP 133/10 C 64K x 32 GS82032AQ-4 Pipeline/Flow Through QFP 133/10 C 64K x 32 GS82032AQ-5 Pipeline/Flow Through QFP 100/12 C 64K x 32 GS82032AQ-6 Pipeline/Flow Through QFP 100/12 C 64K x 32 GS82032AQ-180I Pipeline/Flow Through QFP 180/8 I 64K x 32 GS82032AQ-166I Pipeline/Flow Through QFP 166/8.5 I 64K x 32 GS82032AQ-133I Pipeline/Flow Through QFP 133/10 I 64K x 32 GS82032AQ-4I Pipeline/Flow Through QFP 133/10 I 64K x 32 GS82032AQ-5I Pipeline/Flow Through QFP 100/12 I 64K x 32 GS82032AQ-6I Pipeline/Flow Through QFP 100/12 I Status Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS82032AT-100IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipelined mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings. Rev: 1.09 7/2002 22/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc. GS82032AT/Q-180/166/133/100 Revision History DS/DateRev. Code: Old; New Types of Changes Revisions Format or Content GS82032 Rev 1.03 2/ 2000D;GS820321.04 3/ 2000E Content GS820321.04 3/2000E; GS82032A_r1_05 Content • First Release of A version. Added “A” Version to 82032T/Q, 820E32TQ, and 820H32TQ • Updated ADSC in timing diagrams on pages 16 and 18 Content • Added 200 MHz, 180 MHz, and 166 MHz speed bins (all references updated) • Deleted 150 MHz, 138 MHz, and 66 MHz speed bins (all references deleted) • Deleted BGA reference in “Flow Through/Pipeline Reads” on page 1 • Updated entire datasheet with new standards Content • Updated table on page 1 • Updated Operating Currents table on page 12 • Updated Electrical Characteristics table on page 13 • Updated format to comply with Technical Publications standards 82032A_r1_07; 82032A_r1_08 Content • Added the following part numbers to the Ordering Information table on page 22: – GS82032AT-4 – GS82032AT-6 – GS82032AT-4I – GS82032AT-6I – GS82032AQ-4 – GS82032AQ-6 – GS82032AQ-4I – GS82032AQ-6I 82032A_r1_08; 82032A_r1_09 Content 82032A_r1_05; 82032A_r1_06 82032A_r1_06; 82032A_r1_07 Rev: 1.09 7/2002 • Removed all references to 200 MHz parts (no longer active) 23/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2000, Giga Semiconductor, Inc.