INTEGRAL IN74HCT573AN

TECHNICAL DATA
IN74HCT573A
Octal 3-State Noninverting
Transparent Latch
High-Performance Silicon-Gate CMOS
The IN74HCT573A is identical in pinout to the LS/ALS573. This
device may be used as a level converter for interfacing TTL or NMOS
outputs to High-Speed CMOS inputs.
These latches appear transparent to data (i.e., the outputs change
asynchronously) when Latch Enable is high. When Latch Enable goes
low, data meeting the setup and hold time becomes latched.
The Output Enable input does not affect the state of the latches, but
when Output Enable is high, all device outputs are forced to the highimpedance state. Thus, data may be latched even when the outputs are
not enabled.
• TTL/NMOS-Compatible Input Levels
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 4.5 to 5.5 V
• Low Input Current: 1.0 µA
ORDERING INFORMATION
IN74HCT573AN Plastic
IN74HCT573ADW SOIC
TA = -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
FUNCTION TABLE
Inputs
PIN 20=VCC
PIN 10 = GND
Output
Enable
Latch
Enable
D
Q
L
H
H
H
L
H
L
L
L
L
X
no change
H
X
X
Z
X = don’t care
Z = high impedance
408
Output
IN74HCT573A
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
-0.5 to +7.0
V
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
-1.5 to VCC +1.5
V
DC Output Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
DC Input Current, per Pin
±20
mA
IOUT
DC Output Current, per Pin
±35
mA
ICC
DC Supply Current, VCC and GND Pins
±75
mA
PD
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
-65 to +150
°C
260
°C
VOUT
IIN
Tstg
TL
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VIN, VOUT
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
Min
Max
Unit
4.5
5.5
V
0
VCC
V
-55
+125
°C
0
500
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range
GND≤(VIN or VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC).
Unused outputs must be left open.
409
IN74HCT573A
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)
VCC
V
25 °C
to
-55°C
≤85
°C
≤125
°C
Unit
VOUT=0.1 V or VCC-0.1 V
IOUT≤ 20 µA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
Maximum Low Level Input Voltage
VOUT=0.1 V or VCC-0.1 V
IOUT ≤ 20 µA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
Minimum High-Level
Output Voltage
VIN=VIH or VIL
IOUT ≤ 20 µA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
VIN=VIH or VIL
IOUT ≤ 6.0 mA
4.5
3.98
3.84
3.7
VIN= VIL or VIH
IOUT ≤ 20 µA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
VIN= VIL or VIH
IOUT ≤ 6.0 mA
4.5
0.26
0.33
0.4
Symbol
Parameter
VIH
Minimum High-Level
Input Voltage
VIL
VOH
VOL
Guaranteed Limit
Maximum Low-Level
Output Voltage
Test Conditions
V
IIN
Maximum Input
Leakage Current
VIN=VCC or GND
5.5
±0.1
±1.0
±1.0
µA
IOZ
Maximum Three
State Leakage
Current
Output in High-Impedance
State
VIN =VIH or VIL
VOUT=VCC or GND
5.5
±0.5
±5.0
±10
µA
ICC
Maximum Quiescent
Supply Current
(per Package)
VIN=VCC or GND
IOUT=0µA
5.5
4.0
40
160
µA
∆ICC
Additional Quiescent
Supply Current
VIN=2.4 V, Any One Input
VIN=VCC or GND,
Other Inputs
≥-55°C
25°C to
125°C
mA
2.9
2.4
IOUT=0µA
410
5.5
IN74HCT573A
AC ELECTRICAL CHARACTERISTICS(VCC =5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns)
Guaranteed Limit
Symbol
Parameter
25 °C
to
-55°C
≤85°C
≤125°C
Unit
tPLH, tPHL
Maximum Propagation Delay, Input D to Q
(Figures 1 and 5)
30
38
45
ns
tPLH, tPHL
Maximum Propagation Delay,Latch Enable
to Q (Figures 2 and 5)
30
38
45
ns
tPLZ, tPHZ
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
28
35
42
ns
tPZH, tPZL
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
28
35
42
ns
tTLH, tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 5)
12
15
18
ns
Maximum Input Capacitance
10
10
10
pF
Maximum Three-State Output Capacitance
(Output in High-Impedance State)
15
15
15
pF
CIN
COUT
CPD
Power Dissipation Capacitance (Per Enabled
Output)
Typical @25°C,VCC=5.0 V
Used to determine the no-load dynamic power
consumption:
PD=CPDVCC2f+ICCVCC
48
pF
TIMING REQUIREMENTS (VCC =5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns)
Guaranteed Limit
Symbol
Parameter
25 °C to
-55°C
≤85°C
≤125°C
Unit
tSU
Minimum Setup Time, Input D
to Latch Enable
(Figure 4)
10
13
15
ns
th
Minimum Hold Time, Latch
Enable to Input D
(Figure 4)
5
5
5
ns
tw
Minimum Pulse Width, Latch
Enable (Figure 2)
15
19
22
ns
tr, tf
Maximum Input Rise and Fall
Times (Figure 1)
500
500
500
ns
411
IN74HCT573A
Figure 1. Switching Waveforms
Figure 2. Switching Waveforms
Figure 3. Switching Waveforms
Figure 4. Switching Waveforms
EXPANDED LOGIC DIAGRAM
Figure 5. Test Circuit
Figure 6. Test Circuit
412