Databook.fxp 1/14/99 11:29 AM Page B-5 B-5 01/99 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers 2N3954 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85°C Case Temperature (both sides) Power Derating (both sides) Min V(BR)GSS – 50 IGSS IG Gate Source Voltage VGS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Max 2N3955 Min Max – 50 2N3956 Min – 50 V 50 mA 250 mW 500 mW 4.3 mW/°C Process NJ16 Max Unit V IG = – 1µA, VDS = ØV pA VGS = – 30V, VDS = ØV – 50 Test Conditions – 100 – 100 – 100 – 500 – 500 – 500 nA VGS = – 30V, VDS = ØV – 50 – 50 – 50 pA VDS = 20V, ID = 200 µA – 250 – 250 – 250 nA VDS = 20V, ID = 200 µA – 4.2 – 4.2 – 4.2 V VDS = 20V, ID = 50 µA – 0.5 –4 – 0.5 –4 – 0.5 –4 V VDS = 20V, ID = 200 µA –1 – 4.5 –1 – 4.5 –1 – 4.5 V VDS = – 20V, IG = 1 nA 2 V VDS = ØV, IG = 1 mA 0.5 5 0.5 5 0.5 5 mA VDS = 20V, VGS = ØV 1000 3000 1000 3000 1000 3000 2 2 TA = 125°C TA = 125°C Dynamic Electrical Characteristics Common Source Forward Transconductance g fs 1000 1000 1000 µS VDS = 20V, VGS = ØV f = 1 kHz µS VDS = 20V, VGS = ØV f = 200 MHz Common Source Output Capacitance gos 35 35 35 µS VDS = 20V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 4 4 4 pF VDS = 20V, VGS = ØV f = 1 MHz Drain Gate Capacitance Cdgo 1.5 1.5 1.5 pF Vdg = 10V, IS = ØA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1.2 1.2 1.2 pF VDS = 20V, VGS = ØV f = 1 MHz Noise Figure NF 0.5 0.5 0.5 dB VDS = 20V, VGS = ØV, Rg = 10 MΩ f = 100 Hz Differential Gate Current | IG1 – IG2 | 10 10 10 nA VDS = 20V, ID = 200µA TA = 125°C Saturation Drain Current Ratio IDSS1 /IDSS2 0.95 | VGS1 – VGS2 | 5 10 15 mV VDS = 20V, ID = 200µA 0.8 2 4 mV/°C VDS = 20V, ID = 200µA 1 2.5 5 mV/°C VDS = 20V, ID = 200µA to = +125°C VDS = 20V, ID = 200µA f = 1 kHz Differential Gate Source Voltage Differential Gate Source Voltage with Temperature Transconductance Ratio ∆VGS1 – VGS2 ∆T gfs1 /gfs2 0.97 1 1 TOÐ71 Package Pin Configuration See Section G for Outline Dimensions 1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate www.interfet.com 0.95 0.97 1 1 0.95 0.97 1 1 VDS = 20V, VGS = ØV TA = 25°C to = – 55°C TA = 25°C 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375